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    Infineon Technologies AG CY7C1007D-10VXI

    IC SRAM 1MBIT PARALLEL 28SOJ
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    Flip Electronics CY7C1007D-10VXI

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    Infineon Technologies AG CY7C1007BN-15VXC

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    Infineon Technologies AG CY7C1007B-25VCT

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    Infineon Technologies AG CY7C1007B-15VC

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    CY7C1007 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1007 Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-12PC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-12VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-12VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-12VC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-12VCT Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-15DMB Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-15PC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-15VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-15VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-15VC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-15VCT Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-20DMB Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-20PC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-20VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-20VC Cypress Semiconductor 1M x 1 Static RAM Original PDF
    CY7C1007-20VC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-25DMB Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-25PC Cypress Semiconductor 1M x 1 Static RAM Scan PDF
    CY7C1007-25VC Cypress Semiconductor 1M x 1 Static RAM Original PDF

    CY7C1007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    automatic change over switch circuit diagram

    Abstract: CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480
    Text: 1CY 7C10 07 PRELIMINARY CY7C1007 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed


    Original     		PDF CY7C1007 automatic change over switch circuit diagram CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480

    CY7C1007D-10VXI

    Abstract: CY7C107D CY7C107D-10VXI
    Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B CY7C107D CY7C1007D 83MHz, 66MHz 40MHz 100MHz, CY7C1007D-10VXI CY7C107D-10VXI

    CY7C1007B

    Abstract: CY7C107B
    Text: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).


    Original     		PDF CY7C107B CY7C1007B CY7C107B CY7C1007B CY7C107B/CY7C1007B

    transistor 107A equivalent

    Abstract: CY7C1007 CY7C107
    Text: CY7C107 CY7C1007 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed


    Original     		PDF CY7C107 CY7C1007 transistor 107A equivalent CY7C1007 CY7C107

    Untitled

    Abstract: No abstract text available
    Text: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an


    Original     		PDF CY7C107BN CY7C1007BN CY7C1007BN CY7C107BN/CY7C1007BN

    tPD10

    Abstract: No abstract text available
    Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Features Functional Description[1] • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • •


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B 28-pin 400-Mil CY7C1007D 300-Mil tPD10

    CY7C107B-25VC

    Abstract: CY7C1007B CY7C107B
    Text: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).


    Original     		PDF CY7C107B CY7C1007B CY7C107B CY7C1007B CY7C107B/CY7C1007B CY7C107B-25VC

    CY7C107B-15VC

    Abstract: CY7C1007B CY7C107B
    Text: 1CY7C107B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).


    Original     		PDF 1CY7C107B CY7C107B CY7C1007B CY7C107B CY7C1007B CY7C107B-15VC

    Untitled

    Abstract: No abstract text available
    Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed The CY7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B CY7C107D CY7C1007D

    Untitled

    Abstract: No abstract text available
    Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B 28-pin 400-Mil CY7C1007D 300-Mil

    Untitled

    Abstract: No abstract text available
    Text: CY7C107D CY7C1007D 1-Mbit 1 M x 1 Static RAM 1-Mbit (1 M × 1) Static RAM Features Functional Description • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC ■ The CY7C107D [1] and CY7C1007D [1] are high-performance


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B

    CY7C1007D-10VXI

    Abstract: CY7C107D CY7C107D-10VXI
    Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance


    Original     		PDF CY7C107D CY7C1007D CY7C107B/CY7C1007B CY7C107D CY7C1007D 83MHz, 66MHz 40MHz 100MHz, CY7C1007D-10VXI CY7C107D-10VXI

    CY7C1006

    Abstract: No abstract text available
    Text: Cypress Semiconductor Qualification Report QTP# 97411 VERSION 1.0 January, 1998 1 Meg SRAM 5% Shrink , R32D Technology, Fab 4 CY7C106/CY7C1006 256K x 4 SRAM (28 Pins-400/300 mil SOJ) CY7C107/CY7C1007 1M x 1 SRAM CY7C109/CY7C1009 128K x 8 SRAM (32 Pins-400/300 mil SOJ)


    Original     		PDF CY7C106/CY7C1006 Pins-400/300 CY7C107/CY7C1007 CY7C109/CY7C1009 CY7C106/107/109/1009 CY7C106/1006 CY7C107/1007 CY7C109/1009 CY7C1006

    CY7C1007BN-15VC

    Abstract: CY7C1007BN-15VXC CY7C107BN CY7C107BN-15VC CY7C107BN-15VI
    Text: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an


    Original     		PDF CY7C107BN CY7C1007BN CY7C107BN CY7C1007BN CY7C107BN/CY7C1007BN CY7C1007BN-15VC CY7C1007BN-15VXC CY7C107BN-15VC CY7C107BN-15VI

    tfk 825

    Abstract: No abstract text available
    Text: 1M x 1 Static RAM Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable C E and th ree-state drivers.


    OCR Scan     		PDF CY7C1007 CY7C1007 tfk 825

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1058 CY7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.


    OCR Scan     		PDF CY7C107 CY7C1007

    CY7C1007

    Abstract: No abstract text available
    Text: 05 MbE I • l M x l Static R/W RAM Features Functional Description • H ighspeed — Iaa = 15 ns T he CY7C1007 is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE) and three-state drivers. T he device


    OCR Scan     		PDF CY7C1007 CY7C1007 7C1007â

    A14C

    Abstract: 6A17
    Text: CY7C1007 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static RAM organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is p rovided by an active LO W chip enable


    OCR Scan     		PDF CY7C1007 7C1007 7C1007--25 A14C 6A17

    Untitled

    Abstract: No abstract text available
    Text: '/ CYPRESS 1M x 1 Static RAM Features Functional Description • High speed — U a = 12 ns The CY7C1007 is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and three-state drivers.


    OCR Scan     		PDF CY7C1007 CY7C1007 1414S

    CY7C1007

    Abstract: CY7C1007-12VC CY7C1Q07
    Text: ’/ CYPRESS CY7C1007 PRELIMINARY IM x 1 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention optional — 100 nW


    OCR Scan     		PDF CY7C1007 CY7C1007 300-Mil) 25DMB 28-Lead 38-00198-B CY7C1007-12VC CY7C1Q07

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1007 IM x 1 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention optional — 100 ^iW • Automatic power-down when


    OCR Scan     		PDF CY7C1007 CY7C1007

    CY7C1007

    Abstract: CY7C107
    Text: fax id: 1058 w / CY7C107 CY7C1007 C Y P R E S S 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.


    OCR Scan     		PDF CY7C107 CY7C1007 CY7C1007

    Untitled

    Abstract: No abstract text available
    Text: CY7C1007 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention 100 iW • Automatic power-down when


    OCR Scan     		PDF CY7C1007 CY7C1007 300-m 28-Lead 300-Mil) 28-Lead

    Untitled

    Abstract: No abstract text available
    Text: 7c1007: 1 1 -2 5 -9 1 Revision: Monday, December 2 1 ,1992 ^?1A R S3 1983 CY7C1007 PRELIMINARY CYPRESS '. SEMICONDUCTOR 1M x 1 Static RAM Features Functional Description • H ighspeed — tAA — 12 ns • CMOS for optimum speed/power • Low active power


    OCR Scan     		PDF 7c1007: CY7C1007 CY7C1007