CY7C281A

Abstract: CY7C281A-25JC CY7C281A-30PC
Contextual Info: CY7C281A 1K x 8 PROM Features packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. • CMOS for optimum speed/power

RE 5 TA

Abstract: CY7C281
Contextual Info: CY7C281 CY7C282 " s CYPRESS 1024 x 8 PROM SEMICONDUCTOR Features • C M O S for optimum sp eed / power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • E P R O M technology 100% programmable

Generic PROM Family

Abstract: sumitomo epoxy CY7C225A CY7C235A EME-6300H UL-94V0
Contextual Info: Qualification Report August 1993, CTP# 930305 Version 1.0 4K/8K PROM - PROM20 PROCESS FAMILY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C225A 512 x 8 Registered PROM CY7C235A 1024 x 8 Registered PROM CY7C281/2A 1024 x 8 PROM PRODUCT DESCRIPTION for qualification

CY7C281A

Abstract: CY7C282A CERPACK K73 CY7C281A-45JC
Contextual Info: 1CY 7C28 2A CY7C281A CY7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

CY7C281A-45JC

Contextual Info: 82A CY7C281A CY7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY7C281 CY7C282 I CYPRESS IK x 8 PROM SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

7C281

Abstract: K73 Package C281A CY7C281A CY7C282A CYPRESS CY7C281 CY7C281A-45JC CY7C281A-45DMB d4590 7C281A
Contextual Info: CY7C281A CY7C282A 1K x 8 PROM D Features D D D D static discharge CMOS for optimum speed/power Ċ Ċ Ċ Ċ Functional Description High speed 25 ns commercial 30 ns (military) Low power 495 mW (commercial) 660 mW (military) EPROM technology 100% programmable

1531B

Abstract: 3AAG CY7C281A CY7C282A CY7C281A-45PC CY7C281A-45JC
Contextual Info: CY7C281A CY7C282A CYPRESS Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

CY7C281A

Abstract: CY7C281A-25JC CY7C281A-30PC
Contextual Info: CY7C281A 1K x 8 PROM Features packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. • CMOS for optimum speed/power

Contextual Info: — CY7C281 CY7C282 - :ï CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (m ilitary) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

CY7C281A

Abstract: CY7C281A-25JC CY7C281A-25PC CY7C281A-30JC CY7C281A-30PC
Contextual Info: 1CY7C282A CY7C281A 1K x 8 PROM Features • CMOS for optimum speed/power • High speed — 25 ns Commercial • Low power — 495 mW (Commercial) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP or 28-pin LCC • 5V ±10% VCC, commercial and military

eprom mtbf

Abstract: CY7C282-45DMB CLCC 64 pins footprint 7C291 CERAMIC LEADLESS CHIP CARRIER CLCC 28 It-01 7C282
Contextual Info: CYPRESS SEMI CONDUCTOR LSE D • 2 5 0 ^ 2 001027^ W I ICYP CY7C281 CY7C282 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • H igh speed — 30 ns commercial — 45 n s (military) • Low power — 495 mW (commercial) — 660 mW (military)

Contextual Info: CY7C281A CY7C282A 'W C Y P R E S S Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

Contextual Info: CY7C281 CY7C282 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Highspeed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

Contextual Info: CY7C281A CY7C282A PRELIMINARY CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

7C281

Contextual Info: CY7C281 CY7C282 CYPRESS SEMICONDUCTOR 1024 x 8 PROM Features • C M O S for optimum sp eed / power • H igh speed — 30 ns comm ercial — 45 ns (m ilitary) • Low power — 495 mYV (com m ercial) — 660 mW (m ilitary) • E P R O M technology 100%

"lead material" DIP

Abstract: CY7C281A CY7C282A CY7C281A-45JC VLH-12
Contextual Info: CY7C281A CY7C282A 5T C Y P R E S S IK x 8 PROM Features • • • • C M O S for optim um speed/power H igh speed — 25 n s com m ercial — 3 0 n s (m ilitary) Functional Description T h e C Y 7C 281A a n d C Y 7 C 2 8 2 A a re h ig h -p e rfo rm a n c e 1024-w ord b y 8 -b it

CY7C281A-45JC

Abstract: C282A c282a2
Contextual Info: C Y7C 281A C Y7C 282A pyp: v « *1 X X - 1 K x 8 P R O M tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent program­

Contextual Info: CY7C281 CY7C282 CYPRESS SEMICONDUCTOR 1024 x 8 PROM Features • CM OS for optimum speed/ power • C ap a b le o f w ith stan d in g > 1500V s ta tic d ischarge • High speed — 30 ns commercial — 45 ns (military) Product Characteristics • Low power

Contextual Info: 82A CY7C281A 1K x 8 PROM Features • CMOS for optimum speed/power • High speed — 25 ns Commercial • Low power — 495 mW (Commercial) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP or 28-pin LCC • 5V ±10% VCC, commercial and military

Contextual Info: s CY7C281A CY7C282A PRELIMINARY :.~ igs£= * CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable

Contextual Info: W CY7C281A CY7C282A ? C YPRESS Features • IK x 8 PROM C apable o f w ith stan d in g > 2001V static discharge • C M O S for optim um speed/pow er • High speed — 25 n s com m ercial Functional D escription — 30 n s (m ilitary) T h e C Y 7 C 2 8 IA an d C Y 7 C 2 8 2 A are

Contextual Info: CY7C281 CY7C282 '" 'Y P P F '^ Features • C M O S for op tim u m speed /p ow er • H ig h sp e e d — 3 0 n s (com m ercial — 4 5 n s (m ilitary) • Low power — 495 mW (com m ercial) — 660 m W (m ilitary) • E P R O M tech n ology 100% p rogram m able

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25