Untitled
Abstract: No abstract text available
Text: MICRON I 4’ 8M E Gx36 ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC. MT9D436X MT18D836 X DRAM MODULE FEATURES PIN ASSIGNMENT Front View • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) • 16MB (4 Meg x 36) and 32MB (8 Meg x 36)
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MT9D436X
MT18D836
72-pin,
048-cycle
72-Pin
DD-12)
DD-13)
DD-13
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 4 MEG TECHNOLOGY. INC U SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH 72-Pin Small-Outline DIMM DE-5 SOJ version (DE-3) TSOP version -6 -7 D DT Packages 7 2 -pin Small-Outline DIMM (gold) Refresh Standard/32m s
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72-Pin
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Untitled
Abstract: No abstract text available
Text: MT6D118 1 MEG X 18 DRAM MODULE M IC R O N 1 MEG X 18 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible
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MT6D118
72-pin
250mW
024-cycle
MT60118
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Untitled
Abstract: No abstract text available
Text: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),
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MT2LDT132H
MT4LDT232H
MT8LDT432H
72-pin,
024-cycle
048-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: 1>2’4 M E Gx64 MICRQN I NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. H R AM MT4LDT164A X , MT8LD264A(X), MT16LD464A(X) U r iM IV I R A IV I I I ! For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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MT4LDT164A
MT8LD264A
MT16LD464A
168-pin,
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Untitled
Abstract: No abstract text available
Text: M IC R O N I 2>4 MEG x 72 BUFFERED DRAM DIMMs MT9LD272 X , MT18LD472(F)(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC-standard ECC pinout in a 168-pin, dual in-line
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MT9LD272
MT18LD472
168-pin,
Nld-891-
03IAI
DTN01
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I 2 MEG -PCHNOIOGV IJiC. DRAM MODULE X MT8D264 X 64 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM)
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MT8D264
168-pin,
600mW
048-cycle
168-Pin
DE-15)
0D13fl04
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Untitled
Abstract: No abstract text available
Text: M IC R O N □ P A M _ _ _ _ . . . 512K MT16D51232 32. 1 MEG x 16 DRAM MODULE X 5 1 2 K _ x 3 2 > 1 M E G x 16 FAST PAGE MODE (MT16D51232 LOW POWER, EXTENDED REFRESH (MT16D51232 L) MODULE IV IV /U U I.L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM
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MT16D51232
MT16D51232)
MT16D51232
72-Pin
Power/64ms
MT1BD51232
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MT18D236
Abstract: No abstract text available
Text: |U|K=RON 2 MEG DRAM MODULE 2 MEG X MT18D236 36 DRAM MODULE X 36 DRAM FAST-PAGE-MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are TTL-compatible
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MT18D236
72-pin
052mW
024-cycle
72-Pin
DE-12)
MT18D236G-6
CYCLE20
MT18D236
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Untitled
Abstract: No abstract text available
Text: 8 MEG X 64 NONBUFFERED DRAM DIMM MICRON I TECHNOLOGY, INC. MT32LD864A X DRAM MODULE FEA TURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard eight CAS#, ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 64MB (8 Meg x 64)
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MT32LD864A
168-Pin
168-pin,
048-cycle
DE-23)
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Untitled
Abstract: No abstract text available
Text: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line
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MT2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: MICRON 8’16’ 32 M EGx72 I BUFFERED DRAM DIMMs n o AM LJ 11 M lV I MT9LD T 872(F) X, MT18LD(T)1672(F) X, MT36LD(T)3272(C)(F) X H n •■■ Itfl C j | J I I I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/
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MT18LD
MT36LD
168-pin,
128MB
256MB
096-cycle
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Untitled
Abstract: No abstract text available
Text: MICRON I 1, 2 MEG x 64 DRAM SODIMMs TECHNOLOGY, INC. MT4LDT164H X (S), MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)
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MT4LDT164H
MT8LDT264H
144-pin,
024-cycle
048-cycle
distrib60
144-PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I I C R O N 9 4 M E G x 72 NONBUFFERED DRAM DIMM DRAM MT5LDT472A X Hn I I I llfl 1 1 I I I I I 1* 1 W For the latest full-length data sheets, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View)
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MT5LDT472A
168-pin,
168-PIN
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Untitled
Abstract: No abstract text available
Text: 0U| 1X6 o |oul |o x U0J3|1/\| ‘9 6 6 1. eo ito u suoiiE o^ioeds io s p n p o jd e B u e ijo o i m 6u e q i s e A ie s e j ‘ ou| ‘À6o|ouLjoej_ u o jo i^ I 96/1.1. ''© y - g w d 09|/\ld SIMIMIQ IW d Q p®J©^nquof\] ZL * 8 ‘t ‘Z y A|uo uo|sj0a a|/\|t?g ,
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MA4380
Abstract: DU20
Text: MT2D25632, MT4D51232 256K. 512K x 32 DRAM M O D U LE M IC R O N 256K, 512K x 32 DRAM MODULE 1 ,2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 72-pin single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process
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MT2D25632,
MT4D51232
72-pin
756mW
512-cycle
MT4D51232
T4D51232
MA4380
DU20
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Untitled
Abstract: No abstract text available
Text: |U |IC R O N lEG X 1 MEG DRAM MODULE MT6D118 18 DRAM MODULE X 18 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply
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MT6D118
72-pin
024-cycle
DE-15)
T6D118G
MT60118
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T3D19
Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Text: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process
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MT3D19
30-pin
625mW
024-cycle
128ms
MT3D19)
T3D19
30-pin simm memory "16m x 8"
MT4C1024DJ
MT3019
MT4C4001
30-pin SIMM
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icc766
Abstract: T20D240G
Text: j V 'l l C R O I M 2 MEG DRAM _ _^ _ X MT20D240 40 DRAM MODULE 2 MEG x 40 DRAM _ . _ _ FAST PAGE MODE MT20D240 LOW POWER, EXTENDED REFRESH (MT20D240 L) MODULE I I I V U V L U FEATURES • • • • • 72-pin single-in-line package High-perform ance CM OS silicon-gate process.
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MT20D240
72-pin
024-cycle
128ms
MT20D240)
DE-10)
T20D240G
icc766
T20D240G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON 4 MEG DRAM MODULE X MT16LD464(X 64 DRAM MODULE 4 MEG x 64 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (DIMM) • H igh-perform ance CM OS silicon-gate process
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MT16LD464
168-pin,
880mW
048-cycle
168-pin
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Untitled
Abstract: No abstract text available
Text: NI CR ON S F 1 I C C N D U C T O R INC blllS'-H Ü 0 1 0 0 Q Ü 5 b^ • URN bTE i MICRON I M T4 D 51232 5 12 K X 3 2 D R A M M O D U L E sem iconductorm e. DRAM MODULE 512K x 32 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line
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72-pin
512-cycle
51232M
CYCLE20
MT4D51Z32
MT4D51232
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MAS 560 ag
Abstract: MT8LDT132 T432
Text: ADVANCE M ir S n M M T8LDT132 S , IUiT8LOT432(S) 1 M E G X 32, 4>M E G x 3 2 D R A M M O D U L E SMALL-OUTLINE _ DRAM MODULE 1 meg x 3 2 ,4 meg x 32 4, 16 MEGABYTE, 3.3V, EXTENDED REFRESH, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 72-pin, small-outline,
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T8LDT132
IUiT8LOT432
72-pin,
000mW
024-cycle
128ms
72-Pin
32ISK
GD11M
MAS 560 ag
MT8LDT132
T432
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BU 2527 equivalent
Abstract: No abstract text available
Text: OBSOLETE M I C R O N 2 ’ 4 M E G x 72 I n ^ n 'd££L NONBUFFERED DRAM DIMMs MT9LD272A X , MT18LD472A(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)
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MT9LD272A
MT18LD472A
168-pin,
048-cycle
168-PIN
DF-13
BU 2527 equivalent
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MT4C4007JDJ
Abstract: ST bsx 26
Text: MTHat3Z XI(SFr MTt6D222(XJ (S | t M B G *ZM EE jc3ZDRÄIW1 M O D ULE DRAM 1 MEG, 2 MEG x 32 M UW D U L tr - 4, 8 MEGABYTE, 5V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MOPE FEATURES • JE D E C - a n d i n d u s tr y - s ta n d a r d pinout in a 72-pin,
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MTt6D222
72-pin,
23ZIX
MT4C4007JDJ
ST bsx 26
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