FPM DRAM 30-pin SIMM
Abstract: 30 pin simm dram module 30 pin FPM DRAM 30-pin 30-pin simm memory "30 pin simm" MT2D18M-6 30-pin SIMM
Text: OBSOLETE MT2D18 1 MEG x 8 DRAM MODULE DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process • Single 5V ±10% power supply
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MT2D18
30-pin,
450mW
024-cycle
30-Pin
FPM DRAM 30-pin SIMM
30 pin simm
dram module 30 pin
FPM DRAM 30-pin
30-pin simm memory
"30 pin simm"
MT2D18M-6
30-pin SIMM
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Untitled
Abstract: No abstract text available
Text: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line
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MT2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
128ms
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FPM DRAM 30-pin SIMM
Abstract: T2D18
Text: I^ IIC n D N lEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory m odule SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply
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MT2D18
30-pin,
024-cycle
30-Pin
FPM DRAM 30-pin SIMM
T2D18
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T2D19
Abstract: No abstract text available
Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM
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MT2D18
30-pin
MT2D18M-6
DG113SQ
T2D19
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T2D18
Abstract: No abstract text available
Text: I^ IIC R O IS I 1 MEG 1 MEG DRAM MODULE X X MT2D18 8 DRAM M ODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply • Low power, 6mW standby; 450mW active, typical
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PDF
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MT2D18
30-pin,
450mW
024-cycle
30-Pin
MT2018
T2D18
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Untitled
Abstract: No abstract text available
Text: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process
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MT2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
128ms
400jiA
I25ps
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DM-01
Abstract: Techno RC
Text: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its
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MT2D18
T4C4001JDJ
MT2Q18
DM-01
Techno RC
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30-pin
Abstract: No abstract text available
Text: |V |IC = R O N 1 MEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG X 8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES PIN ASSIGNMENT (Top View) • H ig h -p erfo rm a n ce, C M O S silico n -g a te p ro cess • Sin gle 5V ± 1 0 % p o w er sup p ly
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MT2D18
024-cy
024-cycle
MT2O10
30-pin
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MT4C4001
Abstract: CC3220
Text: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process
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OCR Scan
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PDF
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MT2D18
30-pin,
450mW
024-cycle
128ms
MT2D18)
30-Pin
MT4C4001
CC3220
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Untitled
Abstract: No abstract text available
Text: NICRON SEMICONDUCTOR INC b3E » MICRON □ R A M 1 M E G _ U U blllSMT 0007*110 OflT « U R N 1 MEG x 8 X 8 MT2D18 DRAM MODULE D R A M FAST-PAGE-MODE (MT2D18 l o w p o w e r, F EXTENDED X T F M D F D RE REFRESH (MT2D18 L) MODULE IV I V / U • U FEATURES
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MT2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
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Untitled
Abstract: No abstract text available
Text: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line
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T2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
CYCLE28
MT2D16
MT2D18
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Untitled
Abstract: No abstract text available
Text: •«»•gì gl- MICRON TECHNOLOGY INC »Min i1,‘i-,.1j, Éinttlr^rirrr- BflE D bill 54*5 00Q231S 4 rr? T*’ . IMRN ■"* 1 MEG DRAM MODULE X 8 DRAM FAST PAGE MODE • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon gate process
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00Q231S
30-pin,
450mW
024-cycle
T-46-23-17
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