transistor wu1
Abstract: 2SK1482 j3jza IU01
Text: N 2SK1482 l i N f + MOS FET MOS F E T T', 5 V i t i l i : IC iOffi tllzj: 6 ¡É S M g g O T f é %*' "/*> r * MOS F E T ¿ / c iò , i a t ¡ft ( M : mm ? t „ < , X>f -y f- - t - ? , t W B 0 i) w - V V / i . i t o 5v m u& o fS t ic a» ì, jü s œ u iT * £ â t =
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2SK1482
2SK1482
Q2SJ196
IEI-620)
transistor wu1
j3jza
IU01
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tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8
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2SK679
2SK679Ã
TC-6105
tc6105
2SK679
BH rn transistor
10285
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J196
Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Text: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o
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2SJ196
2SJ196
2SK1482
IEI-620)
J196
L0836
40t60
DF RV transistor
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KTB772
Abstract: KTD882 ice3
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB772 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD882. MILLIMETERS MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC
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KTB772
KTD882.
KTB772
KTD882
ice3
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2SD1698
Abstract: PA33
Text: T 2— S • 5 /— h* S ilicon T ra n sisto r 2SD1698 «f • ^ Ü « b , 800 m A Î T"iOSihFE? -i ^ 9 h V ÿ 'i "7* O I mm 5,2 MAX, ( r- > j > h >^m) A M të T "t„ O Î Ê V c E ( s a t ) 'f " i _ „ (T a - 25 °C) n s w& -t fë te # ÿL -7 9 ■ ^ - x f î l J S Œ
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2SD1698
PWS10
CycleS50
SC-43B
10Nflrr
2SD1698
PA33
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la 5531
Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£
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PWS10
la 5531
TC6116
TC-6116
TC 6116
fn1a3q
FA1A3
Transistor L83
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2SB111
Abstract: 2SB1116 2SB1116A 2SB1116AU 2SD1616 PA33
Text: i — , NEC 5 * • 5/— H f m ^ T iv r x Silicon Transistors A 2 S 1 B 1 1 P N P m fc?$ I r i s T J U M ' >ij □ > h ^ * * « # <* , 1 V =- 0 . 2 0 o / j^ t - P t * ''* # t = 6 A : mm o C E sat) P 1 ?m ftwm ( M OiSVcE(sat) 1 ^ ‘y ^ > it o 6 0 .7 5 2 S D 1 6 1 6 ,
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2SB111
2SD1616,
2SB1116
2SB1116A
PWS10
CycleS50
SC-43B
2SB1116A
2SB1116AU
2SD1616
PA33
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pw510
Abstract: H150 TC-6178
Text: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l
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PW510
H150
TC-6178
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KTB1772
Abstract: KTD1882
Text: SEMICONDUCTOR TECHNICAL DATA KTD1882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB1772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage
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KTD1882
KTB1772.
KTB1772
KTD1882
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Transistor BC 227
Abstract: transistor bc 541 JT MARKING MSA 0154 fnil4m bc 107 transistor b0299 f b f 41 s p s 7 n 60 b TRANSISTOR BC 456 FA1L4M
Text: L I .7\ I IK V • NEC Æ C o m p o u n d T ra n s is to r m = * = r iv r x FAI L4M W at /ScNPN m m h^ 9 *S it ^ - iî O ^ M T x f f i t f C 4-1*1 j l L T ^ i - T o ( R ! = 47 k f ì , ; mm 2 . 8 + 0.2 R 2 = 47 k Q ) 0.65TS: 1.5 o F N 1L 4M t ^ >7 °')/ > 9 '} T'f-ÏJi] T" ë i T 0
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PWS10
Transistor BC 227
transistor bc 541
JT MARKING
MSA 0154
fnil4m
bc 107 transistor
b0299
f b f 41 s p s 7 n 60 b
TRANSISTOR BC 456
FA1L4M
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AK 061
Abstract: No abstract text available
Text: : p | ^ p : y The 740 nm wavelength is ideal for certain sensors and other applications where light visibility is needed. It is packaged in a hermetically sealed can for high reliability and maximum resistance to harsh operating environ ments. C T l Î .
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50/l25|
cycled50%
10sec)
AK 061
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KTB772
Abstract: KTD882 C20016
Text: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage
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KTD882
KTB772.
KTB772
KTD882
C20016
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage
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KTD882
KTB772.
Cycled50%
UUINTUNU01
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K T A 1704 EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER FEATURES • Complementary to KTC2803. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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KTC2803.
Cycled50%
KTA1704
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TC-5845
Abstract: 2SC3615 PA33 YST200
Text: - — • 5 / — s h Silicon T ra n sisto r 2SC3615 T&ìs'J n v Y^>'>7.^ NPN x i& m m n m m 4# K W m a O i H jh p E W Ì : mm) ~ C ~ Î~ o = hFE 8 0 0 — 3200 O fâ V c E s a t) @ V ce = V, Ic= 5 .0 100 m A ~ Ü "Ÿ o V c E ( s a t ) = 0 . 11 o i h j V ’e b o ' T ' Ì ’ o
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2SC3615
CycleS50
SC-43B
SSS99PS2SSS9929SSS
TC-5845
2SC3615
PA33
YST200
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