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    CYK256K16MCCB Search Results

    CYK256K16MCCB Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CYK256K16MCCB Cypress Semiconductor 4-Mbit (256K x 16) Pseudo Static RAM Original PDF
    CYK256K16MCCBU-55BVI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 55NS 48FBGA Original PDF
    CYK256K16MCCBU-55BVXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 55NS 48FBGA Original PDF
    CYK256K16MCCBU-60BVI Cypress Semiconductor 4-Mbit (256K x 16) Pseudo Static RAM Original PDF
    CYK256K16MCCBU-70BVI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA Original PDF
    CYK256K16MCCBU-70BVXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB 48-ball I/O15) CYK256K16MCCB

    CYK256K16MCCB

    Abstract: No abstract text available
    Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB I/O15) 70-ns 60-ns CYK256K16MCCB CYK256K16MCCBU

    CYK256K16MCCB

    Abstract: 60bvi
    Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB I/O15) 70-ns CYK256K16MCCB 60-ns 60bvi

    CYK256K16MCCB

    Abstract: No abstract text available
    Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB I/O15) CYK256K16MCCB

    Untitled

    Abstract: No abstract text available
    Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB 70-ns 48-ball I/O15) 60-ns CYK256K16MCCBU

    CYK256K16MCCB

    Abstract: ultra fine pitch BGA
    Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB I/O15) 70-ns 48kage 60-ns CYK256K16MCCB CYK256K16MCCBU ultra fine pitch BGA

    Untitled

    Abstract: No abstract text available
    Text: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both


    Original
    PDF CYK256K16MCCB 48-ball I/O15) CYK256K16MCCB