Untitled
Abstract: No abstract text available
Text: CYM1911 16K x 68 SRAM Module P R E L IM IN A R Y SEMICONDUCTOR Features • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time of 25 ns • Low active power — 10.4W max. • SMD technologj • Latched address inputs • Four completely independent memory
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CYM1911
16KX4
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Untitled
Abstract: No abstract text available
Text: CYM1911 P R ELIM IN A R Y SEMICONDUCTOR Features • H ig h -d e n s ity 1 -m e g a b it S R A M m o d u le • H ig h -s p e e d C M O S S R A M s — A ccess tim e o f 25 n s • L ow a c tiv e p o w er • S M D te c h n o lo g y — 1 0 .4 W m a x .
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CYM1911
1911PV-25C
1911PV-35C
1911PV-45C
-00024-A
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Untitled
Abstract: No abstract text available
Text: CYM1911 P R E L IM IN A R Y SEMICONDUCTOR Features • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 10.4W max. • SM D technology • Latched address inputs • Four completely independent memory
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CYM1911
i/o46
t/o48
I/O35
I/O34
I/021
l/p60
I/O52
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PCI FOOTPRINT
Abstract: OA81
Text: CYM1911 P R E L IM IN A R Y CYPRESS SEMICONDUCTOR Features • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 10.4W max. • SMD technology • Latched address inputs • Four completely independent memory
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CYM1911
1911PV-25C
1911PV-35C
PCI FOOTPRINT
OA81
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Untitled
Abstract: No abstract text available
Text: This is a partial data sheet. F or com plete data sheet, see Section 8, Modules. CYM1911 P R E L IM IN A R Y SEMICONDUCTOR • H igh-density 1-m egabit SRAM module High-speed CM OS SRAMs — A ccess tim e o f 25 ns • Low active power • SM D technology
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CYM1911
I/O39E
l/O40
I/O47
I/057
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c3174
Abstract: No abstract text available
Text: This is an abbreviated datasheet Contact a Cypress representative for complete specifications. PRELIMINARY C Y M 1 9 1 1 CYPRESS SEMICONDUCTOR 16K X 68 SRAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs
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