CYSH12AF
Abstract: ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
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Original
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PDF
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CYSH12AF
CYSH12AF
CYTY101A.
30CYCLE
10sec
300g/30sec
200pF,
D-85464
ssf hall
CYSH12
CYTY101A
hall ssd
HR100
3060S
1000HR
sse hall
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
|
Original
|
PDF
|
CYSH12AF
CYSH12AF
CYTY101A.
10sec
300g/30sec
200pF,
D-85464
|
CYSH12AF
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
|
Original
|
PDF
|
CYSH12AF
CYSH12AF
CYTY101A.
10sec
300g/30sec
200pF,
D-85464
|