basic stamp bipolar stepper motor
Abstract: LAYOUT PCB BTL TDA 2003 capacitor 1e77 ADB11 smd 1e74 65C816 transistor smd zG j1 B12 GDM smd h2d transistor CDC1631F-E
Text: PRELIMINARY DATA SHEET MICRONAS CDC16xxF-E Automotive Controller Family User Manual CDC1605F-E Automotive Controller Specification Edition May 25, 2004 6251-606-1PD MICRONAS CDC16xxF-E PRELIMINARY DATA SHEET Contents Page Section Title 5 5 9 1. 1.1. 1.2. Introduction
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CDC16xxF-E
CDC1605F-E
6251-606-1PD
basic stamp bipolar stepper motor
LAYOUT PCB BTL TDA 2003
capacitor 1e77
ADB11
smd 1e74
65C816
transistor smd zG j1
B12 GDM
smd h2d transistor
CDC1631F-E
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TWX910-950-1942
Abstract: XGS05035 XGSQ5030 XGSQ5035 XGSQ5040
Text: SÛUARE D CO/ GE NE RAL 3918590 GENERAL 15 D • ôSESSQâ D002210 SEM ICONDUCTOR 95D S 02210 CR. General ^ ^S em ico n d u cto r i^L * Industries, Inc. XGSQ5030 XGSQ5035 XGSQ5040 adUHRETl COMPRNV 7-0 3 - 0*7 NPN SWITCHING POWER TRANSISTORS NPN This unique series utilizes General Semiconductor Industries' C 2R process which
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D002210
XGSQ5030
XGSQ5035
XGSQ5040
XGSQS030
XGSQ5040
10MHz
10//S
TWX910-950-1942
TWX910-950-1942
XGS05035
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westinghouse thyristor drive
Abstract: sa40d Westinghouse thyristor DDG227S P095PH08FJ0 westinghouse to-94 thyristor inverter
Text: lilESTCODE SE M IC ON DU CT OR S 3TE D • ^O ^S S D002273 0 ■ IdESB ^ - ¿ 5 T - / 9 Technical Publication WESTCODE ® SEMICONDUCTORS TP095P/R Issue 2 November 1984 Inverter Grade Stud-Base Thyristor Type P095P/P095R 95 amperes average: up to 1200 volts VRRM/VDRM
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P095P/P095R
TP095P/R
-20UNF-2A
westinghouse thyristor drive
sa40d
Westinghouse thyristor
DDG227S
P095PH08FJ0
westinghouse to-94
thyristor inverter
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Untitled
Abstract: No abstract text available
Text: ICS1891 Integrated Circuit Systems, Inc. Advance Information 100Base-TX PHYceiver for Unmanaged Fast Ethernet Applications General Description Features The ICS1891 is a fully integrated physical layer device sup porting unmanaged 100Mb/s only CSMA/CD Ethernet appli
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ICS1891
100Base-TX
ICS1891
100Mb/s
D2255
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Untitled
Abstract: No abstract text available
Text: FEATURES • so-1100 MHz ■ High Isolation ■ All-Off Condition Jj MODEL NO. VEf DSW25030 GaAs SP2T ■ Non-Reflective ■ Ultra Small 0.270 sq. Surface Mount Package .295 RF2 GND 9 10 + 5V GND RF COM 6 8 PIN 1 DESIGNATION RF 1 GND -15V TTL 2 " TTL1 0" “
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so-1100
DSW25030
D002214
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b20 p03
Abstract: GS214 TSD2331 tms 1601 EL B17 B20 n03 G5214
Text: VITESSE VSC7203 Preliminary Data Sheet 1 GByte/sec SCI Compliant Switch Node Bypass Circuit Features • One Port Conforms to Low Voltage Differential Signalling LVDS Standard (IEEE Std. 1596.3) Multiplexers Allow Bypassing Around any Port for Faulty Node Isolation.
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VSC7203
27mm/side)
G52143-0
00022bS
b20 p03
GS214
TSD2331
tms 1601
EL B17
B20 n03
G5214
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L7C174WC-15
Abstract: No abstract text available
Text: L7C174 8K x 8 Cache-Tag Static RAM FEATURES DESCRIPTION □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — 12 ns maximum □ Low Power Operation
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L7C174
MIL-STD-883,
IDT7174,
IDT71B74,
MK48H74
28-pin
32-pin
L7C174WC-15
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MOSFET D25
Abstract: No abstract text available
Text: VMM 15-045 VMM 15-05 Dual Power MOSFET Modules DSS D25 R DS on = 450/500 V = 20 A = 0.2 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T d = 25°C to 150°C VMM 15-045 VMM 15-05 450 500 V V v DGR T,J = 25°C to 150°C; FL. = 2 0 k i2 Cab VMM 15-045
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4bflb22b
D00221B
MOSFET D25
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Untitled
Abstract: No abstract text available
Text: IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & CMOS compatible
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IBM11D8480B
IBM11E8480B
72-Pin
130ns
26H2528
SA14-4319-01
000224b
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Untitled
Abstract: No abstract text available
Text: SARA Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation SARA chip.
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DDD23D1
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Untitled
Abstract: No abstract text available
Text: DIODE THREE PHASES BRIDGE TYPE DF20AA Power Diode Module D F 2 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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DF20AA
20Amp
F20Ap
D002263
B-125
B-126
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF150AA20 UL;E76102 M is an isolated MOSFET module designed for fast switching applications of low voltage/high current. SF1 5 0 A A 2 0 enable you to control high power with compact package. SF1 5 0 A A 2 0 • I ,= 150A. V;s = 200V • Compact Package
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SF150AA20
E76102
100m200m
QDD224A
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2SJ374
Abstract: diode EGP 10 F20F6P 60v 10a p type mosfet diode EGP
Text: 6 0 V v 'J - X yt-7-MOSFET 60V S E R IE S PO W ER M O S F E T W M \|->ÎIS1 O U T L I N E D IM E N S IO N S -60v-20a I ffitS * R A T IN G S A b s o lu te J-R Item B M a x im u m . . • R a tin g s sc yw Sym bol T eh V In P eak ID P I da T c = 2 5 °C TOR
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60v-20A
HBB1I15Ã
DDDP23B
2SJ374
diode EGP 10
F20F6P
60v 10a p type mosfet
diode EGP
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LA3 DR2
Abstract: vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A
Text: TD2bô?2 00G223Ö h3^ • - TH 7896A- H _ High data rate version FULL FIELD CCD IMAGE SENSOR 1024x1024 PIXELS ■ Optimized for high data rate applications: minimum readout time = 28 ms (4 outputs).
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00G223Ö
1024x1024
000E2Sb
TH7896AVRH
7896AVR
TH7896AGRCQ
LA3 DR2
vn 530 sp 31 x 132
THOMSON-CSF CCD
414 LEM DIODE
tsc 429
7896A
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VN1220
Abstract: No abstract text available
Text: SUPERTEX INC 3 SE D • 07732^5 00QE27b ö M S T X T -3 9 -0 5 N-Channel Enhancement-Mode Vertical DMOS FETs 7 “- 39 - / / Ordering Information Standard Commercial Devices t O rd er N um b er / Package R d S<ON '□ ON) BV oqs (m ax) (m in) TO-39 TO-220
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00QE27b
VN1216N2
VN1220N2
O-220
VN1216N5
VN1220N5
VN1216ND
VN1220ND
Q227T
T-39-05
VN1220
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Untitled
Abstract: No abstract text available
Text: +105°C Metallized Polypropylene Axial . Leaded Wrap and Fill Capacitors F o r al l g e n e r a l p u r p o s e f i l m c a p a c i t o r a p p l i c a t i o n s FEATURES Capacitance Range 0.001 pF to 10.0 pF Voltage Range 160WVDC to 630WVDC Good AC! pulse applications
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160WVDC
630WVDC
473MPWS3M
33SMPWtC0K
683MPW160K
335MPW250K
683MPW258K
683MPW400K
33SMPW4MX
475MPW1B0K
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Untitled
Abstract: No abstract text available
Text: S -29801 CMOS 768-bit bit sequential E2PROM T h e S-29801 is a 7 68 -b it sequential E 2 P R 0 M with internal address counter. A ddress input is the sequential increm ent system by CLK pin, and output is serial. C urrent consum ption is greatly red uced by
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768-bit
S-29801
MB8541
00225b
D002257
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Untitled
Abstract: No abstract text available
Text: fc,BE D TOKO AMERICA/ SIGNAL • fiSHÖTl? GGG2SSD 74T « S P T SPT77SO 8-BIT, 500 MSPS FLASH A/D CONVERTER PRELIMINARY INFORMATION SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • 1:2 Demuxed ECL Compatible Outputs
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SPT77SO
SPT7750
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Untitled
Abstract: No abstract text available
Text: DF20CA DIO DE T H R E E P H A S E S B R ID G E T Y P E (High Surge Current Capability) * UL;E76102(M) Power Diode Module D F20C A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri
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DF20CA
E76102
20Amp
550/600A
50/60H
B-129
D0022flfl
B-130
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Untitled
Abstract: No abstract text available
Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static
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EDI8L32512C
S12Kx32
512Kx32
EDI8L32512C
1Mx16
EDBL325I2C
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diode 66a
Abstract: FCF06A60 GCF06A60 35NSEC
Text: FAST RECOVERY DIODE GCF06A60 FCF06A60 6.6A/600V/trr : 35nsec FEATURES o Similar to TO-22ÛA Case 9 Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common o Ultra-Fast Recovery ° Low Forward Voltage Drop o High Surge Capability o 100 Volts through 600 Volts Types
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A/600V/trr
35nsec
GCF06A60
FCF06A60
O-220A
bbl5123
diode 66a
FCF06A60
35NSEC
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diode T88
Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Text: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30
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IXTN79N20
OT-227
diode T88
f g megamos
ixys ixtn 79n20
megamos
megamos 13
LD25
ixtn 79n20
79N20
425al
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Untitled
Abstract: No abstract text available
Text: I////CATALYST • ■ Iff P relim inary S E M I C O N D U C T O R CAT24WC32/64 32K/64K-Bit Serial CMOS E2PROM FEATURES ■ 400 KHz l2C Bus Compatible* Self-Timed W rite Cycle with Auto-Clear ■ 1.8 to 6 Volt Operation Write Protect Feature ■ Low Power CMOS Technology
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CAT24WC32/64
32K/64K-Bit
32-Byte
CAT24WC32/64
24WC32
C32/64
24WC32KI-2
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IC-2526
Abstract: No abstract text available
Text: M IC2526 M iere! MIC2526 Dual USB High-Side Power Switch Advance Information General Description Features The MIC2526 is a dual integrated high-side power switch designed for self-powered and bus-powered Universal Serial Bus USB applications conforming to USB requirements.
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IC2526
MIC2526
MIC2526
140mil
500mA
MIC2526-2
0DG2S33
IC-2526
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