LD25 Search Results

Contextual Info: j ^ Y S ,X F K 3 N 3 0 IXFN 773N30 'reliminary Data VDSS = 300V lD25 HiPerFET Power MOSFET = 73A RDDS on S( , = 45mn t < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t TO-264 AA (1XFK) Test Conditions Maximum Ratings IXFK IXFN V DSS

Contextual Info: LD2520 & LD2524 WTE POWER SEMICONDUCTORS Pb 25A AVALANCHE LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA


































































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Contextual Info: Mini SAS Connector SPECIFICATIONS LD25 Series Vertical, SM T, Receptacle 0.8mm [.032"] Pitch Mechanical Insertion Force: 55.5N max. Withdrawal Force: 49.0N max. Durability: 250 Cycles. Electrical Voltage Rating: 250V. Current Rating: 0.5A per pin. Contact Resistance: ∆20mΩ max. after Life testing.

HH-1M2012-601

Abstract: LDO, ld12 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29
Contextual Info: 2 8 LD31 LD30 LD29 LD28 LD27 LD26 LD25 LD24 LD23 LD22 LD21 LD20 LD19 LD18 LD17 LD16 LD15 LD14 LD13 LD12 LD11 LD10 LD9 LD8 LD7 LD6 LD5 LD4 LD3 LD2 LD1 LD0 LD[0.31] LA[0.31] A9 A11 A12 A10 A13 C10 D10 C11 B11 B10 B12 C12 D11 D9 B13 C13 D12 A14 B14 C14 A15

Contextual Info: LD2500 – LD2506 25A LUCAS TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + C Mechanical Data E D       Dim

ld18

Abstract: ld25 LA29 LA18 LD11 LD12 LD17 LD19 LD20 PU0207
Contextual Info: VCC LD[0.31] LA[2.31] LD[0.31] 1 2223390 4590190 LD0 LD1 LD2 LD3 LD4 LD5 LD6 LD7 LD8 LD9 LD10 LD11 LD12 LD13 LD14 LD15 LD16 LD17 LD18 LD19 LD20 LD21 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29 LD30 LD31 5 4 3 2 207 206 205 204 203 202 201 200 199 198 197 196

La2 D22

Abstract: RN0401 la3 d20 ld18 PR 84 LD17 LD19 LD20 LD11 LD12
Contextual Info: +3.3V LD[0.31] LD[0.31] LA[2.31] 111111 22446688022446 01091909009090 LD0 LD1 LD2 LD3 LD4 LD5 LD6 LD7 LD8 LD9 LD10 LD11 LD12 LD13 LD14 LD15 LD16 LD17 LD18 LD19 LD20 LD21 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29 LD30 LD31 82 79 78 77 76 75 74 73 72 71 68

LT 220 diode

Abstract: ls- 11m D-68623
Contextual Info: □IXYS Advanced Technical Information VMM 600-0075 S MOSFET Module with ultrafast Schottky Diode V DSs =75V lD25 =590 A ^ D S o n = ^ Symbol Test Conditions vw DSS Tj = 25°C to 150°C 75 V V DGR Tj = 25°C to 150°C; RGS = 10 kQ. 75 V < O (/> N-Channel Enhancement Mode

ld12 st

Abstract: LD12 Regulator transistor p86 5D-11 batery STLM75 2.2uf X7R str9 GPIO14 LIS302DL
Contextual Info: D C B A 3 PS_FRAME 6 SC1_CLK LD25 2.3V green 1 2 LED_ACTIVE Link R25 250 -> 4mA 1 3V3_BOARD P80 P82 SC2_CLK P22 SC2_SDA P23 SC1_CLK P24 P87 RSTB SC1_MISO P26 TEMP_INT P54 1 3 5 7 9 11 13 15 17 19 2 4 6 8 10 12 14 16 18 20 13 14 15 16 17 18 19 20 21 22 23 24

Contextual Info: LD2500 – LD2506 WTE POWER SEMICONDUCTORS Pb 25A LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA


































































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IXFX120N20

Contextual Info: nixYs HiPerFET Power MOSFETs IXFX120N20 VDSS = lD25 = ^DS on = Single M O S F E T Die ^ trr <250 ns 9D Preliminary data sheet 200V 120A v p « Symbol Test Conditions V vDGB Tj =25°Cto150°C Tj = 25° C to 150° C; RGS = 1 Mi2 200 200 V V v as vGSM Continuous

Contextual Info: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR

868 mhz saw

Abstract: LD25A MARKING 868 B3574
Contextual Info: SAW Components Preliminary Data B3574 LD25A SAW Components B3574 (LD25A) Low Loss Filter 868,30 MHz Preliminary Data Ceramic package QCC8C Features ● RF low-loss filter for remote control receivers ● Package for Surface Mounted Technology (SMT) ● Balanced and unbalanced operation possible

d2s diode

Abstract: IXTH50N20
Contextual Info: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient

LD2520

Abstract: LD2524 Lucas Semiconductors
Contextual Info: LD2520 & LD2524 WTE POWER SEMICONDUCTORS Pb 25A AVALANCHE LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA


































































C

Contextual Info: LD2500 – LD2506 WTE POWER SEMICONDUCTORS Pb 25A LUCAS TYPE PRESS-FIT DIODE Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA


































































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ld2502

Abstract: LD2500 LD2501 LD2503 LD2504 LD2505 LD2506 Lucas Semiconductors
Contextual Info: LD2500 – LD2506 WTE POWER SEMICONDUCTORS Pb 25A LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA


































































C

Contextual Info: SPECIFICATIONS Serial ATA Connector LD25 Series Vertical, SMT Type Receptacle 1.27mm [.0 50” ] Pitch 22 Pos. Mechanical Insertion Force: 45N max. Withdrawal Force: 10N min. Durability: 500 Cycles Electrical Current Rating: 1.5A Contact Resistance: 30mΩ max.

L-D2500

Abstract: A 1013 ld2502 LD2500 LD2501 LD2503 LD2504 LD2505 LD2506
Contextual Info: LD2500 – LD2506 W TE PO WE R SEM IC O ND U C TO RS 25A 10mm LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 20µA C Mechanical Data ! ! ! ! ! Case: All Copper Case and Components

switching pushpull

Contextual Info: Standard Power MOSFET IXTH10P50 IXTH11P50 VDSS = -500 V lD25 =-10/-11 R d s ,o „ , = 0.90/0.75 Cl P-Channel Enhancement Mode Avalanche Rated Preliminary data Maximum Ratings Symbol Test Conditions ^DSS Tj = 25°C to 150°C -500 V v DGR T, = 25°C to 150°C; RGS = 1 Mi2

IXTM80N60

Abstract: diode c248 20n60vd
Contextual Info: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient

Contextual Info: DIXYS HiPerFET Power MOSFETs IXFH76N07-11 VDSS IXFH76N07-12 lD25 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family = 70 V = 76 A ^ D S o n = 1 1 /1 2 lilQ trr < 150 ns Prelim inary data Symbol Test Conditions Maximum Ratings v* DSS Tj = 25°C to 175°C

Contextual Info: LD2520, LD2524, LD2536 25A AVALANCHE LUCAS TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data E D   

Contextual Info: Mini SAS Connector SPECIFICATIONS LD25 Series Vertical, SMT, Receptacle 0.8mm [.032"] Pitch Mechanical Insertion Force: 55.5N max. Withdrawal Force: 49.0N max. Durability: 250 Cycles. Electrical Voltage Rating: 250V. Current Rating: 0.5A per pin. Contact Resistance: ∆20mΩ max. after Life testing.