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    11P50 Search Results

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    11P50 Price and Stock

    Littelfuse Inc IXTT11P50

    MOSFET P-CH 500V 11A TO268
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    Newark IXTT11P50 Bulk 300
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    NIDEC Components 1211P503

    TRIMMER 50KOHM 0.75W PC PIN SIDE
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    NIDEC Components 1211P501

    TRIMMER 500OHM 0.75W PC PIN SIDE
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    NIDEC Components 1211P502

    TRIMMER 5K OHM 0.75W PC PIN SIDE
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    NIDEC Components 1211P500

    TRIMMER 50 OHM 0.75W PC PIN SIDE
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    11P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol IXTH 11P50 IXTT 11P50 Test Conditions RDS on Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 11P50 O-247 -250V

    11P50

    Abstract: IXTH10P50
    Text: Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS IXTH 10P50 IXTH 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original     		PDF 10P50 11P50 11P50 O-247 IXTH10P50

    11P50

    Abstract: TO-247 transistor N 343 AD
    Text: VDSS ID25 Standard Power MOSFET IXTH 11P50 IXTT 11P50 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 11P50 O-247 -250V 11P50 TO-247 transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS IXTH 10P50 IXTH 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original     		PDF 10P50 11P50 11P50 O-247

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 10P50 11P50 11P50 O-247 O-268

    11P50

    Abstract: No abstract text available
    Text: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 10P50 11P50 O-247 -250V 11P50

    11P50

    Abstract: 10p50 GS 247
    Text: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 10P50 11P50 O-247 O-268 11P50 10p50 GS 247

    switching pushpull

    Abstract: IXTH10P50
    Text: VDSS Standard Power MOSFET IXTH 10P50 IXTH 11P50 -500 V -500 V RDS on ID25 0.90 Ω -10 A 0.75 Ω -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 10P50 11P50 O-247 switching pushpull IXTH10P50

    AVC fans

    Abstract: A5007 DC1205SY transistors 13001 DP5-5025 TelTec TC5050B TEL-TEC, TC5050B AVC cooler
    Text: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: F Issue Date: May 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the


    Original     		PDF 21085F/0--May AVC fans A5007 DC1205SY transistors 13001 DP5-5025 TelTec TC5050B TEL-TEC, TC5050B AVC cooler

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    2.54 mm pitch BERG stick

    Abstract: concept 2114s STANDARD 2.54 PITCH BERG STICK STANDARD 2.54 PITCH BERG STICK 4 pin connector 2 mm pitch BERG stick 1251SM-02 13002 and 13003 power transistor 50 pin 2x25, 2mm pitch berg connectors PIN 11375-1 OZ 9902
    Text: ND3% BASE1 XXXX5115-0708-1-P 708 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:45 TS:TS date TS time CONNECTORS & ACCESSORIES Find Datasheets Online SOCKETS – DIP/SIP AMP DIPLOMATE DUAL LEAF DL SIP SOCKETS (CONT.) SIP SOCKETS PHOSPHOR BRONZE WITH TIN PLATING


    Original     		PDF 50F2249 46F4434 46F4437 922576-20-I 922576-26-I 922576-34-I 922576-40-I 922576-50-I 65F198 65F199 2.54 mm pitch BERG stick concept 2114s STANDARD 2.54 PITCH BERG STICK STANDARD 2.54 PITCH BERG STICK 4 pin connector 2 mm pitch BERG stick 1251SM-02 13002 and 13003 power transistor 50 pin 2x25, 2mm pitch berg connectors PIN 11375-1 OZ 9902

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    cooler master fan

    Abstract: 2410ML-04W-B60 DC1205SY dynaeon PGA socket 478 cooler clip DC1205 DC1205B 50102B AMD Thermal Design Guide HSC002P124
    Text: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: G Issue Date: August 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the


    Original     		PDF 21085G/0--August cooler master fan 2410ML-04W-B60 DC1205SY dynaeon PGA socket 478 cooler clip DC1205 DC1205B 50102B AMD Thermal Design Guide HSC002P124

    Untitled

    Abstract: No abstract text available
    Text: P re lim in a ry data Standard Power MOSFET IX T H IX T H P-Channel Enhancement Mode Avalanche Rated 10P50 11P50 Symbol Test Conditions V DSS T j = 25 °C to 150°C -500 V VDGR Tj = 25 °C to 150°C; RGS = 1 M£2 -500 V Vos V GSM Continuous +20 V Transient


    OCR Scan     		PDF -500V 10P50 11P50

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data V DSS Standard Power MOSFET IXTH 7P50 IXTH 8P50 P-Channel Enhancement Mode Avalanche Rated Test Conditions V DSS Tj = 25°C to 150°C -500 V V DGR ^ = 25°C to 150°C; RGS = 1 M£i -500 V Continuous ±20 V Transient ±30 V < o />


    OCR Scan     		PDF -500V O-247

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS v DSS Standard Power MOSFET IXTH10P50 11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings


    OCR Scan     		PDF IXTH10P50 IXTH11P50 Cto150 10P50 11P50 O-247

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    switching pushpull

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH10P50 11P50 VDSS = -500 V lD25 =-10/-11 R d s ,o „ , = 0.90/0.75 Cl P-Channel Enhancement Mode Avalanche Rated Preliminary data Maximum Ratings Symbol Test Conditions ^DSS Tj = 25°C to 150°C -500 V v DGR T, = 25°C to 150°C; RGS = 1 Mi2


    OCR Scan     		PDF IXTH10P50 IXTH11P50 10P50 11P50 11P50 O-247 switching pushpull

    21N50

    Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200


    OCR Scan     		PDF 12N50A 21N50 24N50 15N60 20N60 6N80A 11N80 13N80 6N90A 10N90 6N80 MOSFET 11N80 PAGE-42 K 15N60 IXTM21N50 IXTH7P50

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    Mosfet K 135 To3

    Abstract: a 1712 mosfet 11P50 ixtm11p50
    Text: IDE D 1 4t.at.Bat. o o o a a s i i I I X Y S CORP _T ~ -3 <?- 2 3 □ IXYS P-CHANNEL MOSFETS 11P50, 45 11P50, 45 MAXIMUM RATINGS IX T H 1 1 P 5 0 ' IX T H 1 1 P if5 Parameter Sym. IX T M 1 1 P 5 0 IX T M 1 1 P ^ 5 Drain-Source Voltage 1


    OCR Scan     		PDF IXTH11P50 IXTM11P50 IXTH11Pit5 IXTM11P45 IXTH11P50, IXTM11P50, 50-500V, 00esn0tincluoe Mosfet K 135 To3 a 1712 mosfet 11P50