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    Untitled

    Abstract: No abstract text available
    Text: FCN-244P/245P*-g/e FCN-241 J/247J*- g/e 5.4 0.213 5.6 (0.220 . — 1 0.4 (0 .016) .I. • ■ ( ■ ■ I rl J lJ l|— (000?2, 3.4 (0.134) “ 1.27 (0.050) C t v 1.905 (0.075) MOUNTING HOLE LAYOUT 50 contacts 36 contacts PCB 50 contacts LAYOUT


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    PDF FCN-244P/245P* FCN-241 J/247J* 244P036-G/E FCN-244P050-G/E FCN-244P096-G/E D017bfl FCN-230

    KM681002J-15

    Abstract: KM681002J-20 256X8 KM681002J-17 samsung chip 820
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM681002 0017bñ4 72b PRELIMINARY SMGK CMOS SRAM 131,072 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)


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    PDF KM681002 0017bà KM661002J-15: 170mA KM681002J-17: 160mA KM641002J-20: KM681002J: 32-Pin 256X8 KM681002J-15 KM681002J-20 KM681002J-17 samsung chip 820

    qml-38535

    Abstract: 4076B CDFP4-F16
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV 8 SHEET PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAW ING IS AVAILABLE FOR USE BY ALL DEPAR TM ENTS AND A G EN C IE S OF THE DEP A R TM E N T OF DEFENSE


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    PDF MIL-BUL-103. MIL-BUL-103 qml-38535 4076B CDFP4-F16