BUZ21

Abstract: bt 109 transistor BUZ21 L T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ! ObE D btiSBT31 D01MM23 T " PowerMOS transistor BUZ21 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

Contextual Info: blE D • TT c bSM'IÔE'l D01Mbb2 774 ■ M MITS MITSUBISHI LASER DIODES ML8XX1 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION ML8XX1 series are • Stable fundam ental transverse mode oscillation InGaAsP laser diodes which

M44C260

Abstract: M48C260 0014D1 EPI EEPROM CPU AGB A
Contextual Info: Tem ic M48C260 TELEFUNKEN Semiconductors MARC4 - 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,

RD01MUS1-101

Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE D01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING D01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

wd90c30

Contextual Info: ìm à g in s CORP : S4E J> *5716256 0 0 1 4 7 4 ? b l2 T '5 2 . - 3 V 4 5 WD90C30 High Performance Video Controller :' :i 5 8 WESTERN DIGITAI. she t> m 'jT ia s a a o g im tm ö WE ST ERN D I G I T A L sst h o c w d 9 0C 30 CORP TABLE OF CONTENTS T -5 2 -3 3 -4 5

panasonic timer switch tb 179

Abstract: panasonic SH-D
Contextual Info: P a n a X S e r ie s B ‘ r i n g i n g ‘T o m o r r o w MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • 0Q167flS 273 ■ t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the Semiconductors Described in This Document

RD01MUS2

Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE D01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 D01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

001472

Contextual Info: Sfl E D • b7EMEM0 001M712 446 MOKIJ -S 2 / M 5 -Æ O K I MSC7125-XX ? SEMI CONDUCTOR GROUP 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-xx drives displays with up to

date code for panasonic electrolytic capacitors

Abstract: SU SERIES CAPACITOR ALUMINIUM panasonic SV 3900 panasonic capacitors series ka
Contextual Info: Panasonic Series: Type: Aluminium Electrolytic Capacitors/GUE GUE Screw Terminal Japan Aluminium Electrolytic Capacitors Screw Terminal Type Miniaturization • Features • Lifetime: 85 °C 2000 h • Miniaturized size and high-ripple-current product ■ Recommended Applications

equivalent transistor c 243

Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS D01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX D01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

2779, transistor

Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE D01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION D01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

T2804D

Abstract: I3604
Contextual Info: 4Ö2S771 D 0 m 4 G 4 flOb * I D T LAE D INTEGRATED DEVICE. IDT7M1001 128K x 8 IDT7M1003 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE In te g ra te d D evice T echnology, Inc. FEATURES DESCRIPTION: • High-density 1M/512K CMOS Dual-Port Static RAM module • Fast access times:

DS1803-100

Abstract: DS1803 DS1803-010 DS1803-050
Contextual Info: DS1803 D A L L A S DS1803 Addressâble Duâl Digitsl Potentiometer s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 3V or 5V Power Supplies HI C • Ultra-low power consumption “ C W1 £ • Two digitally controlled, 256-position potentiometers 3 vcc

CDFP4-F16

Abstract: marking code CLJ qml-38535 qml38535
Contextual Info: REVISIONS DESCRIPTION LTR DATE APPROVED YR-MO-DA REV SH EET REV SH EET 15 16 17 REV STATUS OF S H EE TS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS D R A W I N G IS AVAILABLE F O R U S E B Y ALL DEPARTMENTS A N D AGENCIES OF THE DEPARTMENT O F DEFENSE A M S C N/A

CL04 12

Abstract: lr cm04 M4B7 TDA1547 CL01 CL03 CL04 QFP64 TDA1373H xo992
Contextual Info: Philips Semiconductors Objective specification General Digital Input GDIN TDA1373H FEATURES m ill • Four operating modes: - Sample Rate Conversion (SRC) mode - AD/DA mode - SLAVE-VCO mode - SLAVE-VCXO mode 1 1 1 1 1 1 ii i BITSTREAM CONVERSION Full digital sample rate conversion over a wide range of

M54922P

Abstract: 10KHZ 2804S m54922 PLL 2400 MHZ MITSUBISHI frequency counter ics
Contextual Info: M ITSUBISHI BIPOLAR DIGITAL ICs M54922P MITSUBISHI DGTL LOGIC 31E D • bSMTfla? OOlMTbb M ■MIT3; P L L F R E Q U E N C Y S Y N T H E S IZ E R FO R D IG ITA L TUNING S Y S T E M S T DESCRIPTION - i " ] - c 6 - q 5 PIN CONFIGURATIO N (TOP V IEW ) The M54922P is a semiconductor integrated circuit consisting

LT028

Contextual Info: LT028PS Features • Sm all astig m atic dista nce less tha n 10^m • Low d ro o p rate (10% TYP.) • W avelength: 7 8 0n m • S in gle transverse m ode Applications • G eneral p u rp o se laser printers • In fo rm a tio n p ro ce ssio g e q u ip m e n t

S14936DY

Contextual Info: Q IM O TD ^L [ F & E ^ S I Final Electrical Specifications u m TECHNOLOGY LTC1479 PowerPath C ontroller for Dual Battery Systems D ecem ber 1996 f€ATUA€S DCSCRIPTIOH • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup

RD01MUS2

Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE D01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 D01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE D01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING D01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

CD motor driver

Abstract: 1407T AN8389S iv-18 IV-22
Contextual Info: A N 8389S AN8389S 4 Channel Linear Driver IC • Description T h e A N 8 3 8 9 S is a m onolithic integrated circuit w hich e m p lo y 4 c h a n n e l H -b rid g e sy ste m th a t th e y a re su ita b le fo r d riv in g m o to r o r a c tu a to r o f C D player.

iv-18

Abstract: IV-22 IV18 AN8389S 2003 ic for pc power supply 1407T motor forward reverse diagram 7SB 5 pin IC 24 pin driver ic IV18-170
Contextual Info: A N 8389S AN8389S 4 Channel Linear Driver IC • Description T h e A N 8 3 8 9 S is a m onolithic integrated circuit w hich e m p lo y 4 c h a n n e l H -b rid g e sy ste m th a t th e y a re su ita b le fo r d riv in g m o to r o r a c tu a to r o f C D player.

3M Touch Systems

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE D01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 D01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Contextual Info: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP b.grandchamp@ommic.com RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC