Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs bHMRflSS D02377G 00 3 • f l I T l M 5 M 4 V 4 8 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) (3 .3 V )V c c DQl * * { DQ2 «■ »RITE CONTROL
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D02377G
4194304-BIT
524288-WORD
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D0237
Abstract: AD578 DH-32B
Text: ANALOG DEVICES INC 33E D H DölbflOO 0 Q 2 3 7 Ö 7 A N ALO G D E V IC E S 5 • ANA Very Fast, Complete 12-Bit A/D Converter AD578 . „ 1.1 T-5/ -10-IZ Scope. T his specification covers the detail requirem ents for a hy b rid , very fast, 12-bit successive approxim ation
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0Q537Ã
12-BitA/D
AD578
12-bit
AD578SD/883B
AD578TD/883B
AD578ZSD/883B
AD578ZTD/883B
ADI-H-1000:
DH-32B.
D0237
AD578
DH-32B
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Untitled
Abstract: No abstract text available
Text: b E 4 tì fl ES 0G23bTì IMA • H IT 1 MITSUBISHILSIs M 5 M 4 4 1 9 0 A J ,T P ,R T - 6 ,-7 ,-8 ,-6 S ,- 7 S ,- 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is
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0G23bTÃ
4718592-BIT
262144-WORD
18-BIT
G0S37ES
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KM681001A
Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
Text: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. .• Low Power Dissipation Standby (TTL) The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by
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KM681001A
128Kx
KM681001A-15
KM681001A-17
KM681001A-20
KM681001AJ
32-SOJ-40Q
KM681001A
576-bit
KM681001A-15
KM681001A-20
KM681001AJ
D0237
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates
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KM68B1002
128Kx8
KM68B1002
576-bit
32-pin
00S37B3
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Untitled
Abstract: No abstract text available
Text: Data Sheet • A l G il Microelectronics T7121 HDLC Interface for ISDN HIFI-64 Features • Low-cost device for B-channel (64 kbits/s) or Dchannel (16 kbits/s) data transport ■ Optional transparent mode — no HDLC framing is performed ■ Frame sync (FS) allows a slot-select feature to
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T7121
HIFI-64)
T7250A/B
00500Sb
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Untitled
Abstract: No abstract text available
Text: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology
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A7260
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CDM5364
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D M3D2271 0023712 1 IHAS Read-Only Memories ROMs CDM5364, CDM5364A T-w-w-is- to Ol 24 - VDD - A8 22 - A9 21 - AI2 — CE/CÉ (9 - AIO ie - A ll 17 - <57 16 — 06 15 - Q5 14 — 04 13 - Q3 92C3-336 C D M 5364
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M3D2271
CDM5364,
CDM5364A
92C3-336
8192-Word
CDM5364
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Untitled
Abstract: No abstract text available
Text: taMTÖSS OOEBTMû b b? • M IT I MITSUBISHI LSIs M5M4V4400J,TP,RT-6,-7,-8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 1048576-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily of 1 0 4 8 5 7 6 - word by 4 - b it dynamic R AM S,
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M5M4V4400J
4194304-BIT
1048576-WORD
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Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y S E M I C O N D U C T O R S DS3574-3.3 MA28151 RADIATION HARD PROGRAMMABLE COMMUNICATION INTERFACE The MA28151 is based on the industry standard 8251A Universal Synchronous Asynchronous Receiver/Transmitter USART , modified for data communications with the MAS281
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DS3574-3
MA28151
MA28151
MAS281
Cobalt-60
MIL-STD-883
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ma31750
Abstract: No abstract text available
Text: S i GEC PLESSEY SE M IC O N D U C TO R S DS3810-2.4 MA8251 RADIATION HARD PROGRAMMABLE COMMUNICATION INTERFACE The MA8251 is based on the industry standard 8251A Universal Synchronous Asynchronous Receiver/Transmitter USART . The MA8251 is used as a peripheral device and is
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DS3810-2
MA8251
MA8251
MIL-STD-883
3x10s
5x101
1x1012
1x1015n/cm2
D023751
ma31750
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Untitled
Abstract: No abstract text available
Text: cP ÍITSU IJ L 1 J v May 1997 Revision 1.0 d a ta s h e e t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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SDC8UV7284-
64MByte
64-megabtye
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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TLCS-68000
Abstract: No abstract text available
Text: S HI B A UC/UP 54E D TOSHIBA • DDE3 7 1 ti 7 7 S * T 0 S 3 TM P68440 ~ T V 5 2 '* 3 3 - 1 ? 1. INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to maxim ize performance and throughput. The TMP68440 dual-direct memory access controller
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P68440
TLCS-68000
TMP68440
DDMA-109
TMP68450)
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6652/6653/6654/6655/6656 Speech Synthesizers with Internal ROM DESCRIPTION The MSM6650 family is the successor to the MSM637x family. These speech synthesizers use varying amounts of internal mask ROM for speech playback, as shown in the table below.
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MSM6652/6653/6654/6655/6656
MSM6650
MSM637x
MSM6652
MSM6653
MSM6654
MSM6655
MSM6656
DD237
MSM6652/3/4/5/6
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Untitled
Abstract: No abstract text available
Text: b E 4 li ñ S S 0 0 2 3 7 ^ 2 7 7 4 • H I T MITSUBISHI LS Is ! M5M4V4900J,TP,RT-6,-7,-8,-6S,-7S,-8S 1 * ,> FAST PAGE MODE 4718592-BIT 524288-WORD BY 9-BIT DYNAMIC RAM r. \\n<¿ DESCRIPTION This is a fam ily o f 524288-w ord by 9-bit dynamic RAMs, PIN CONFIGURATION (TOP VIEW)
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M5M4V4900J
4718592-BIT
524288-WORD
524288-w
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jedec package MO-220-WGGD
Abstract: package lfcsp-wq
Text: a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 W)
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20-Lead
16-Lead
ADG711/ADG712/ADG713
ADG781/ADG782/ADG783
ADG781
ADG782
8/12--Rev.
3/02--Rev.
D02372-0-2/13
jedec package MO-220-WGGD
package lfcsp-wq
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Untitled
Abstract: No abstract text available
Text: 2.5 ⍀ Quad SPST Switches in Chip Scale Package ADG781/ADG782/ADG783 a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package
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ADG781/ADG782/ADG783
20-Lead
16-Lead
ADG711/ADG712/ADG713
ADG781
ADG782
ADG783
D02372-0-8/12
CP-20-6
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Untitled
Abstract: No abstract text available
Text: KM641003 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10mA(max.) Operating KM641003-15: 170mA(max.) KM641003-17:1 6 0 mA(max.)
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KM641003
KM641003-15:
170mA
KM641003-17
KM641003-20
KM641003J
32-SOJ-4QO
KM641003
576-bit
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3577-3.4 MA290911 RADIATION HARD MICROPROGRAM SEQUENCER The MA2909/11 M icroprogram Sequencer is fully compatible with the industry standard 2909A and 2911A components, and forms part of the GPS 2900 Series of
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DS3577-3
MA290911
MA2909/11
Cobalt-60
MIL-STD-883
MAx2909xxxxx
0D537TE
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Untitled
Abstract: No abstract text available
Text: bSMTöES □□237E7 T32 • M I T I MITSUBISHILSIs M5M4V 4100J,TP,RT- 6,-7,-8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fam ily o f 4 1 9 4 3 0 4 -w ord by 1- b it dynamic RAMS, PIN CONFIGURATION (TOP VIEW)
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237E7
4194304-BIT
4194304-WORD
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LFCSP-WQ
Abstract: No abstract text available
Text: a CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package ADG784 FEATURES Low Insertion Loss and On Resistance: 4 ⍀ Typical On-Resistance Flatness <2 ⍀ Bandwidth >200 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: <1%
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ADG784
16-Lead
ADG774
100VG-AnyLAN
Mbps/16
ATM25/155
ADG784
ADG784BCPZ-REEL7
20-Lead
LFCSP-WQ
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LFCSP-WQ
Abstract: ADG783BCPZ-REEL7 package lfcsp-wq CP-20-6
Text: a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 W)
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20-Lead
16-Lead
ADG711/ADG712/ADG713
ADG781/ADG782/ADG783
ADG781
ADG782
CP-20-6
LFCSP-WQ
ADG783BCPZ-REEL7
package lfcsp-wq
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 3806 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • A-D converter. 8 -b itX 8 channels The 3806 group Is 8-bit microcomputer based on the 740 • D-A -b itX 2 channels
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41516
Abstract: MSM6650 MSM6652 MSM6653 MSM6654 MSM6655 MSM6656 B-057
Text: O K I Semiconductor MSM6652/6653/6654/6655/6656 Speech Synthesizers with Internal ROM D E S C R IP T IO N The MSM6650 family is the successor to the MSM637x family. These speech synthesizers use varying amounts of internal mask ROM for speech playback, as shown in the table below.
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MSM6652/6653/6654/6655/6656
MSM6650
MSM637x
MSM6652
MSM6653
MSM6654
MSM6655
MSM6656
b72MPM0
41516
B-057
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