Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency
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bbS3T31
D0314T7
BFP540
OT173X)
BFP540
OT173
OT173X
RE120
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SCR TYN 410
Abstract: SCR TYN Series TYN 725 FTH A 001 26 10 tvn 610 33n15 TYN 30A
Text: 3GE » • 7^237 D031444 D ■ ' T ?2.S'iS' S C S - T HH O O M M S S O N ¡ I L H O H » * ! T X N / T Y N 0 5 1 0 -► 1 0 1 0 S G S-THOMSON THYRISTORS ■ GLASS PASSIVATED CHIP . POSSIBILITY OF MOUNTING ON PRINTED CIRCUIT ■ AVAILABLE IN NON-INSULATED VERSION ->
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E81734)
1QD314M7
t-25-15
SCR TYN 410
SCR TYN Series
TYN 725
FTH A 001 26 10
tvn 610
33n15
TYN 30A
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BTA06-200
Abstract: No abstract text available
Text: 3QE D H 7^237 D0314Ô4 1 • ^ T - Z S - [ 55 SGS-THOMSON B T A 06 A W [ » ^ t & e g T T liM O t g S S G S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 6 A at Tc = 95 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 75 mA Ql-II-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 60 A.
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D0314
T-25-15
D88BTA06ABCWP4
CB-415)
BTA06-200
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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ad5263
Abstract: No abstract text available
Text: FEATURES 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C Voltage divider temperature coefficient 5 ppm/°C
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256-Position,
AD5263
AD5263
D03142-0-7/12
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AD8221-EVAL
Abstract: AD8221 BAV199L FJH1100 OP27 SP720 AD7723 AD780 AD8022 AD8221BR
Text: ᅏٷݣഗ AD8221 ༬Ⴀ থ –IN 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4 AD8221 5 –VS TOP VIEW 03149-001 ᅟᇀ๑ᆩ ֑ᆩবูक़ڦMSOPހጎ ሺᅮཚࡗ1߲ྔևۉፆยዃ ሺᅮྷݔǖ11000 ۉᇸۉუྷݔǖ±2.3 V±18 V
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AD8221
AD8221BR)
AD8221-EVAL
AD8221
BAV199L
FJH1100
OP27
SP720
AD7723
AD780
AD8022
AD8221BR
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ad8601
Abstract: ad5263
Text: FEATURES FUNCTIONAL BLOCK DIAGRAM 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C
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256-Position,
AD5263
AD5263
D03142-0-10/12
ad8601
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RGP2
Abstract: No abstract text available
Text: Low Distortion Differential RF/IF Amplifier AD8351 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM –3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB
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AD8351
AD8351
10-Lead
16-Lead
RM-10
RGP2
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KM23V4100C
Abstract: KM-23V4100CG
Text: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)
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KM23V4100C
8/256K
150ns
120ns
KM23V4100C
40-DIP-600
KM23V4100CG
-SOP-525
KM23V4100CT
44-TSOP2-400
KM-23V4100CG
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3-178777-0
Abstract: No abstract text available
Text: AIVIF» Catalog 82007 Flexible Film Products Revised 8-96 AMP 0.5 [.020] FPC Connectors Material and Finish: Housing— Thermoplastic, 94V-0 rated, beige Slider— Thermoplastic, 94V-0 rated, black Contact Finish— Phosphor bronze, plated 0.0038 [[.000150] min. tin-lead
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amplitude controlled Wien Bridge Oscillator
Abstract: AD5263 MO-153-AD 2N3906 AD8610 OP279
Text: Quad, 15 V, 256-Position, Digital Potentiometer with Pin-Selectable SPI/I2C AD5263 FEATURES FUNCTIONAL BLOCK DIAGRAM A1 W1 B1 A2 W2 B2 A3 W3 B3 A4 W4 B4 VDD VSS SHDN RES/AD1 RDAC 1 REGISTER RDAC 2 REGISTER ADDRESS DECODER CS/AD0 SPI/I2C SELECT LOGIC GND Mechanical potentiometer replacement
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256-Position,
AD5263
D03142-0-7/09
amplitude controlled Wien Bridge Oscillator
AD5263
MO-153-AD
2N3906
AD8610
OP279
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Untitled
Abstract: No abstract text available
Text: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56AW873E
608-word
72-bit
168-pin
ADE-203-685A
64-Mbit
HM5165800ATT)
16-bit
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Untitled
Abstract: No abstract text available
Text: HB56A472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI Description The HB56A472E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The HB56A472E is a 4 M
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HB56A472E
304-word
72-bit
16-MbitDRAM
HM5116400BTS)
16-bit
74ABT16244)
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PDF
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D0314
Abstract: No abstract text available
Text: K REVISION K TABLE 4 END TO END "L" DV TO DV DV TO EM -TXX DV TO EM (-SXX) EM (-TXX) TO EM (-TXX) EM (-TXX) TO EM (-SXX) EM (-SXX) TO EM (-SXX) DV-N TO DV-N DV-N TO EM-N (-TXX) DV-N TO EM-N (-SXX) .950[24.13] .835[21.21] .806[20.48] .720[18.29] .691[17.55]
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EQCD-040-XX
D0314
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d0403
Abstract: J01020A0105 D0414 yr23633 J01120A0047 N00091A0015 H01000A0131 D0603 N00000A0011 H01012B0672
Text: 14 262 RF Combination Connectors and Cable Clamps HF-Kombiniersteckverbinder und Kabelabfangungen Contents Übersicht 14.1 14.2 14.3 14.4 14.5 14.6 14.1 14.2 14.3 14.4 14.5 14.6 Combination Plug . . . . . . . . . . . . . . . . . . . . . 263 Combination Jack . . . . . . . . . . . . . . . . . . . . . 264
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N ' E ADS7800 1 12-Bit 3{is Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 333k SAMPLES PER SECOND The ADS7800 is a complete 12-bit sampling analogto-digital converter using state-of-the-art CMOS struc
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ADS7800
12-Bit
ADS7800
333kHz
FSFI/212
17313b5
D03144S
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Untitled
Abstract: No abstract text available
Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is
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HB526C164EN
288-word
64-bit
ADE-203-628A
16-Mbit
HM5216165TT)
24C02)
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PDF
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Untitled
Abstract: No abstract text available
Text: Low Distortion Differential RF/IF Amplifier AD8351 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB
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AD8351
AD8351
AD6645
AD8351ARMZ-REEL7
AD8351ACPZ-R7
AD8351-EVALZ
10-Lead
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AD7723
Abstract: AD780 AD8022 AD8221 AD8221BR AD8221-EVAL OP1177 OP27 AD8221 die AD8221ARMZ-R7
Text: Precision Instrumentation Amplifier AD8221 CONNECTION DIAGRAM Easy to use Available in space-saving MSOP Gain set with 1 external resistor gain range 1 to 1000 Wide power supply range: ±2.3 V to ±18 V Temperature range for specified performance: −40°C to +85°C
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AD8221
AD8221BR)
D03149
AD7723
AD780
AD8022
AD8221
AD8221BR
AD8221-EVAL
OP1177
OP27
AD8221 die
AD8221ARMZ-R7
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BFP96
Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Text: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.
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BFP96
OT173
OT173X
BFQ32C.
BFP96
BFP96 P6
BFQ32C
OA74
Philips MBB
UBB824
1462, TRANSISTOR
MB8627
transistor 1548
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WB1215
Abstract: No abstract text available
Text: PRELIMINARY 7/ CYPRESS WB1215 Serial Input PLL with 1.2-G H z Prescaler Features Applications Operating voltage 2.7V to 5.5V Operating frequency: up to 1.2 GHz with prescaler ratios of 64/65 and 128/129 Lock detect feature Power-down mode 20-pin TSSOP Thin Shrink Small Outline Package
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WB1215
20-pin
WB1215
11-Bit
18-Bit
14-Bit
15-Bit
DD314bfl
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PDF
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ad5263
Abstract: No abstract text available
Text: FEATURES 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C Voltage divider temperature coefficient 5 ppm/°C
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Original
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256-Position,
AD5263
AD5263
D03142-0-4/12
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PDF
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Untitled
Abstract: No abstract text available
Text: Precision Instrumentation Amplifier AD8221 FEATURES CONNECTION DIAGRAM –IN 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4 AD8221 5 –VS TOP VIEW 03149-001 Easy to use Available in space-saving MSOP Gain set with 1 external resistor gain range 1 to 1000 Wide power supply range: ±2.3 V to ±18 V
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AD8221
AD8221BR)
D03149â
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Untitled
Abstract: No abstract text available
Text: MA2608N80000000 N-Ch and P-Ch Fast Switching MOSFE Ts General Description Product Summery The MA2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2608N80000000
MA2608N8
D020210
3000pcs
15000pcs
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