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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.	OCR Scan	PDF	bbS3R31 0D30727 OT223 BUK482-60A QD3D731 bb53T31 D03D732 OT223.
LD 7523 GS Abstract: transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS Text: 3DE » • 7 ^ 2 3 7 DQ3072Ö T SCS-THOMSON ¡ H ü « ! 1 R F K 4 H 1 5 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TY P E IR FK4H 150 . . ■ ■ V dss RDS on Id 100 V 0.014 £2 145 A HIGH CURRENT POWER MODULE VERY LOW Rth JUNCTION TO CASE	OCR Scan	PDF	DQ3072Ö O-240) PC-029« LD 7523 GS transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

OCR Scan

PDF

bbS3R31 0D30727 OT223 BUK482-60A QD3D731 bb53T31 D03D732 OT223.

LD 7523 GS

Abstract: transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS
Text: 3DE » • 7 ^ 2 3 7 DQ3072Ö T SCS-THOMSON ¡ H ü « ! 1 R F K 4 H 1 5 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TY P E IR FK4H 150 . . ■ ■ V dss RDS on Id 100 V 0.014 £2 145 A HIGH CURRENT POWER MODULE VERY LOW Rth JUNCTION TO CASE

OCR Scan

PDF

DQ3072Ö O-240) PC-029« LD 7523 GS transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS