Untitled
Abstract: No abstract text available
Text: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH05SG60C
20mA2)
PG-TO220-2
D05G60C
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Untitled
Abstract: No abstract text available
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior
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IDD05SG60C
20mA2)
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Untitled
Abstract: No abstract text available
Text: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior
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IDH05SG60C
20mA2)
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Untitled
Abstract: No abstract text available
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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IDD05SG60C
20mA2)
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Untitled
Abstract: No abstract text available
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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IDD05SG60C
20mA2)
PG-TO252-3
D05G60C
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D05G60C
Abstract: IDH05SG60C D05G JESD22 PG-TO220-2 R600
Text: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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IDH05SG60C
20mA2)
D05G60C
IDH05SG60C
D05G
JESD22
PG-TO220-2
R600
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D05G60C
Abstract: smd diode marking UJ IDD05SG60C JESD22 smd diode UJ 56 A
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDD05SG60C
20mA2)
D05G60C
smd diode marking UJ
IDD05SG60C
JESD22
smd diode UJ 56 A
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Untitled
Abstract: No abstract text available
Text: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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PDF
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IDH05SG60C
20mA2)
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D05G60C
Abstract: IDD05SG60C JESD22 D05G SMD F5 DIODE smd diode UJ 56 A
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDD05SG60C
20mA2)
D05G60C
IDD05SG60C
JESD22
D05G
SMD F5 DIODE
smd diode UJ 56 A
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