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    TT electronics / BI Technologies P084D-071S3CCR10K

    POT 10K OHM 1/40W PLASTIC R-LOG
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    DigiKey P084D-071S3CCR10K Tray 1,680
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    Newark P084D-071S3CCR10K Bulk 1,680
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    Sager P084D-071S3CCR10K
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    TT Electronics plc P084D-071S3CCR10K

    Potentiometers 1/20W 10K Ohms 20% 8mm SQ ROTARY POT
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    Mouser Electronics P084D-071S3CCR10K
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    D071S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5118160

    Abstract: No abstract text available
    Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)


    OCR Scan     		PDF 16-Bit 5118160BSJ-50/-60/-70 W77//77/7/7, ///////////777A 235b05 0071SSb 5118160

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Information I 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)


    OCR Scan     		PDF 16-Bit 3116160BSJ-50/-60/-70 3118160BSJ-50/-60/-70 HYB3118160BSJ-50) HYB3118160BSJ-60) HYB3118160BSJ-70) 071b05

    D071S

    Abstract: No abstract text available
    Text: Decembsr 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The NM27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National's latest 0.8/i CMOS split gate AMG tm


    OCR Scan     		PDF NM27LV010B 576-Bit 20-3A bSD112b D071S

    D071521

    Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
    Text: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)


    OCR Scan     		PDF 5117805BSJ A235bOS 5117805BSJ-50/-60/-70 I/01-I/08 fiE35bDS 0G71532 D071521 d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106

    tivd

    Abstract: d07-15 d0715 M08A M14B NM24C16 NM24C16L 50090
    Text: a t i o n a l S e m February 1995 i c o n d u c t o r & NM24C16L 16,384-Bit Serial EEPROM l2C Synchronous 2-Wire Bus General Description Features The N M 24C 16L device has 16,384 bits o f C M O S non­ vo la tile electrica lly erasable memory. This device conform s


    OCR Scan     		PDF NM24C16L 384-Bit NM24C16L 20-3A 0G71S0Ã tivd d07-15 d0715 M08A M14B NM24C16 50090

    Untitled

    Abstract: No abstract text available
    Text: January 1995 Semiconductor NM27P010 1,048,576-Bit 128k X 8 POP Processor Oriented CMOS EPROM General Description Features The NM27P010 is a 1 Mbit POP EPROM configured as 128k x 8. It's designed to simplify microprocessor interfacing while remaining compatible with standard EPROMs. It can


    OCR Scan     		PDF NM27P010 576-Bit 20-3A D071SS3