Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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CI43
Abstract: 3BL DBM LMX2330A LMX2331A LMX2332A LMX233XA
Text: LMX2330A/LMX2331A/LMX2332A N a t i o n a l S e m i c o n d u c t o r I* LMX2330A/ LM X2331A / LMX2332A PLLatinum Dual Frequency Synthesizer for RF Personal Communications 2.5 G H z/5 1 0 MHz 2.0 G H z/5 1 0 MHz 1.2 G H z/5 1 0 MHz General Description LM X2330A
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LMX2330A/
X2331A/
LMX2332A
LMX2330A
LMX2331A
LMX2332A
GHz/510
LMX233xA
CI43
3BL DBM
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MMD-04BZ-2R2M-V1
Abstract: MMD-10DZ-R36M-X1 MMD-06CZ MMD-06CZ-4R7M-V1 MMD-05CZ MMD-06CZ-3R3M-V1 MMD-06CE-100M-M2 MMD-10DZ-R45M-X1 MMD-12FD-100M-V1 MMD-04BZ-1R0M-V1
Text: • ■ FFE EA ATTU UR RE ES S RoHS compliant. Super low resistance, ultra high current rating. High performance I sat realized by metal dust core. Frequency Range: up to 1MHz. ■ ■ A AP PP PLLIIC CA ATTIIO ON N PDA, notebook, desktop, and server applications.
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125under
100KHz
Agilent4284A
WK4235
CH3302/G
CH1320
CH1320S
CH11025
GOM805
MMD-04BZ-2R2M-V1
MMD-10DZ-R36M-X1
MMD-06CZ
MMD-06CZ-4R7M-V1
MMD-05CZ
MMD-06CZ-3R3M-V1
MMD-06CE-100M-M2
MMD-10DZ-R45M-X1
MMD-12FD-100M-V1
MMD-04BZ-1R0M-V1
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2SK1959
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an
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2SK1959
2SK1959
C10535E
MEI-1202
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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d1120 ic
Abstract: d1120 D1122 1121F BE2LA
Text: MOTOROLA SC -CXSTRS/R 6367254 J b 3b 7254 F> MOTOROLA SC CXSTRS/R F 96D 8 2 4 3 0 D _ 7"- I ? ~ I 7 M AXIMUM RATINGS V alu e Sym bol R a tin g MD1120F MD1121,F D1122,F MQ1120 U n it Vdc Colle ctor-E m itte r V o lta g e v CEO C o llector-B ase V oltag e
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MD1120F
MD1121
MD1122
MQ1120
MD1121,
10A-04,
D1122
D1120F,
d1120 ic
d1120
1121F
BE2LA
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MIL-W-22759
Abstract: coax SOLDER SLEEVES MIL-W-81822 D-112-2222-9 D-112-1222-9 13309 raychem solder sleeve MIL-W22759 D-112-1224-9
Text: SPECIFICATION CONTROL DRAWING Product Revision Product Name D-112-1222-9 N/C D-112-1224-9 N/C D-112-1622 N/C D-112-1830-9 N/C D-112-2222-9 N/C D-112-2622 N/C D-112-2830-9 N/C D-112-3222-9 N/C D-112-3622 N/C D-112-3830-9 N/C Dimensional Notes: 4 Wire Designation
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D-112-1222-9
D-112-1224-9
D-112-1622
D-112-1830-9
D-112-2222-9
D-112-2622
D-112-2830-9
D-112-3222-9
D-112-3622
D-112-3830-9
MIL-W-22759
coax SOLDER SLEEVES
MIL-W-81822
13309
raychem solder sleeve
MIL-W22759
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2SK1824
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and
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2SK1824
2SK1824
C10535E
MEI-1202
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2SK1960
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an
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2SK1960
2SK1960
C10535E
MEI-1202
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d1711
Abstract: TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711
Text: D-1000 SERIES D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible & Programmable Signal Conditioning Modules Introduction The D-1000 Series family of signal conditioning modules consists of the D-1000/2000 input modules and the D-3000/4000 output modules.
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D-1000
D-1000/D-2000/D-3000/D-4000
RS-232/RS-485-Compatible
D-1000/2000
D-3000/4000
RS-232
RS-485
Output/RS-232C
d1711
TRANSISTOR d3000
D2000 transistor
d1541
transistor D2222
transistor D1411
D1541 transistor
D1521 transistor
D1521
transistor d1711
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2SK2054
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK1824
Abstract: SC-75
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK1960
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder
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VSC6134
709-compliant
GR253-compliant
STS192
16-bit
STS192/10
97-free
897-pin
VMDS-10185
VSC6134
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICOND LOGIC b5ailEE 0G7534Q flb5 NSC1 Q18826 National blE D X -ÏZ -C 7 Semiconductor 74ACTQ18826 18-Bit Inverting Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’ACTQ18826 contains eighteen inverting buffers with
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0G7534Q
Q18826
74ACTQ18826
18-Bit
ACTQ18826
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2SK1824
Abstract: SC-75
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm 0.8 ± 0.1 0.3 +0.1 –0 1.6 ± 0.1 The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it
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2SK1824
2SK1824
SC-75
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HSC125-44
Abstract: HSC90-34 HSC90-42 Calex 12 v 100w amp HSC90-40 HSC125-46
Text: 90 -130 Watt Multiple Output High efficiency 115/230 V ac input dual selectable Input surge current protection M ain output overvoltage protection Short circuit foldback protection 100% burn-in under high ambient temperature Built-in EMI filter UL recognition and
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D11-22
HSC125-44
HSC90-34
HSC90-42
Calex
12 v 100w amp
HSC90-40
HSC125-46
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2sk2055
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2090
Abstract: C10535E MEI-1202 marking G22
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 2.5 V and it is not 2.1 ±0.1 1.25 ±0.1 necessary to consider a drive current, this FET is ideal as an
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2SK2090
2SK2090
C10535E
MEI-1202
marking G22
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8AB444
Abstract: 48B749 c4fm TIA/EIA-102 telephone repeater hexadecimal
Text: Application Note Using the 2975 to perform Control Channel Logging This revised application note provides P25 test professionals with an overview of how the 2975 can be used in troubleshooting P25 protocol issues by using the P25 Control Channel Logging Option
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