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    D1131SH65T Search Results

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    D1131SH65T Price and Stock

    Infineon Technologies AG D1131SH65TXPSA1

    DIODE GEN PURP 6.5KV 1100A
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    DigiKey D1131SH65TXPSA1 Tray 2 1
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    Avnet Americas D1131SH65TXPSA1 Tray 60 Weeks 2
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    EBV Elektronik D1131SH65TXPSA1 53 Weeks 2
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    Infineon Technologies AG D1131SH65T

    Rectifiers 6.5KV 1.42KA
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    Mouser Electronics D1131SH65T
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    D1131SH65T Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D1131SH65T Eupec Fast Hard Drive Diode Original PDF
    D1131SH65T Eupec Fast Hard Drive Diode Original PDF
    D1131SH65TXPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 6.5KV 1100A Original PDF

    D1131SH65T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D711N

    Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
    Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.


    Original     		12bzw. 24-pulsige MN2000-04d D711N D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor PDF

    HIGH VOLTAGE DIODE kv

    Abstract: freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N
    Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Diodes for IGBT and GCT converters 1. Applications Modern high power frequency converters > approx. 1 MW are increasingly realised with IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is


    Original     		MN2000-04e HIGH VOLTAGE DIODE kv freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N PDF

    D1331SH45T

    Abstract: D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471
    Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.


    Original     		12bzw. 24-pulsige MN2000-04d D1331SH45T D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471 PDF