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Toshiba America Electronic Components 2SD1407A-Y(F) TRANS NPN 100V 5A TO220NIS
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DigiKey	2SD1407A-Y(F)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Semiconductor Inc SD1407A RF Bipolar Transistors
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Mouser Electronics	SD1407A					1 $67.86 10 $61.5 100 $55.13 1000 $55.13 10000 $55.13	Get Quote

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D1407 Abstract: No abstract text available Text: D1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	PDF	2SD1407A 2SB1016A 2-10R1A D1407
D1407A Abstract: D1407 2SD1407A 2SB1016A Text: D1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	PDF	2SD1407A 2SB1016A D1407A D1407 2SD1407A 2SB1016A
D1407 Abstract: D1407A 2SB1016A 2SD1407A Text: D1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	PDF	2SD1407A 2SB1016A D1407 D1407A 2SB1016A 2SD1407A
D1407A Abstract: D1407 2SD1407A 2SB1016A Text: D1407A 東芝トランジスタシリコンNPN三重拡散 D1407A 通信工業用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。	Original	PDF	2SD1407A 2SB1016A 2-10R1A D1407A D1407 2SD1407A 2SB1016A