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    Abstract: No abstract text available
    Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F512 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 4fl5bl75 D154flbb