4332 transistors
Abstract: D16430
Text: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed PACKAGE DRAWINGS Unit: mm 1.5 −0.1 +0.2 for high-speed switching and features a very low collector-to-emitter
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2SC4332,
4332-Z
2SC4332
2SC4332-Z
4332 transistors
D16430
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sc4332 transistors
Abstract: 2SC4332 2SC4332-Z
Text: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING Unit: mm developed for high-speed switching and features a very low collector-to-emitter saturation voltage.
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PDF
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2SC4332,
2SC4332-Z
2SC4332
2SC4332-Z
2sc4332 transistors
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D16430
Abstract: 4332 transistors 2SC4332 2SC4332-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4332,4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm 5.0 ±0.2 FEATURES 0.5 ±0.1 1 2 3 1.1 ±0.2 • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)
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2SC4332
4332-Z
2SC4332-Z
D16430
4332 transistors
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D16430
Abstract: 2SC4332 2SC4332-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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