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    ROHM Semiconductor BD2065AFJ-E2

    IC SWITCH USB HI SIDE 1CH SOP-J8
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    WeEn Semiconductor Co Ltd WNSC6D20650B6J

    DIODE SIL CARBIDE 650V 20A D2PAK
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    onsemi FFSD2065B

    DIODE SIL CARB 650V 23.4A DPAK
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    WeEn Semiconductor Co Ltd WNSC6D20650WQ

    DIODE SIL CARB 650V 20A TO247-2
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    WeEn Semiconductor Co Ltd WNSC2D20650CWQ

    DIODE ARR SIC 650V 20A TO247-3
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    Find more D2065 price and stock on Findchips.com

    D2065 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D2065J Teccor Electronics 41A Iout, 200V Vrrm General Purpose Silicon Rectifier Scan PDF

    D2065 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2065C5

    Abstract: IDW20G65C5
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for


    Original     		PDF IDW20G65C5 D2065C5 IDW20G65C5

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


    Original     		PDF IDW20G65C5

    12780

    Abstract: No abstract text available
    Text: Specifications: STATSHIELD METAL-IN SERIES LEAD-FREE AREA ESD SHIELDING BAG Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Capacitance Probe to dissipate 1 KV Side Weld Seals 3/8 in. (±0.10)


    Original     		PDF 10E11 12780

    MIL-PRF-81705D

    Abstract: E595 10E2 MIL-STD-3010 ESDDS11
    Text: Specifications: STATSHIELD METAL-IN SERIES LEAD-FREE AREA ESD SHIELDING BAG Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Typical Values Test Procedures/Method <10E11 ohms <10E2 ohms


    Original     		PDF 10E11 2002/95/EC MIL-PRF-81705D E595 10E2 MIL-STD-3010 ESDDS11

    EIA-583

    Abstract: ESD S11.11 ASTM 1249 ASTM D2103 - 10 ESD-DS11 ds1131 ASTM F1249 ASTM D2103 10 EIA-625 F-1249
    Text: Charleswater Please Log-In Email: Home Distributors Catalogue Password: Create Account Now! New Technical Products ESD Contact Statshield Transparent Metal Out ESD Shielding Bags Features: ● ● ● ● ● ● Charleswater ESD Bags meet EN 61340 5-1 requirements: 1. "Low charging packaging


    Original     		PDF EOS/ESD-DS11 ESD-DS11 EIA-583 ESD S11.11 ASTM 1249 ASTM D2103 - 10 ds1131 ASTM F1249 ASTM D2103 10 EIA-625 F-1249

    D2103

    Abstract: MIL-PRF-81705D ASTM D2103 10 D2065 ASTM D2103 - 10 ASTM D2103 10E2 STM11 201515 6134051
    Text: STATSHIELD M/I SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Side Weld Seals 3/8 in. Statshield® bags are packaged 100 per package in an oversized shielding bag rather than a cardboard box.


    Original     		PDF Mil-PRF81705D, D2103 MIL-PRF-81705D ASTM D2103 10 D2065 ASTM D2103 - 10 ASTM D2103 10E2 STM11 201515 6134051

    ESD S11.11

    Abstract: D-2065 Desco Industries MIL-PRF-81705D ASTM D2103 - 10 D2065 IN224
    Text: Specifications: STATSHIELD METAL-IN SERIES LEAD-FREE AREA ESD SHIELDING BAG Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Capacitance Probe to dissipate 1 KV Side Weld Seals 3/8 in. (±0.10)


    Original     		PDF 10E11 MIL-PRF-81705D, ESD S11.11 D-2065 Desco Industries MIL-PRF-81705D ASTM D2103 - 10 D2065 IN224

    D2103

    Abstract: MIL-PRF81705D DS-1131 PET FILM ASTM D2103
    Text: STATSHIELD M/O SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Typical Values Test Procedures/Method <108 ohms <102 ohms <1011 ohms EOS/ESD S11.11 EOS/ESD S11.11 EOS/ESD S11.11 EOS/ESD S11.31 Modified Incline Plane


    Original     		PDF MIL-PRF-81705D, EOS/ESD-DS11 ESD-DS11 D2103 MIL-PRF81705D DS-1131 PET FILM ASTM D2103

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH20G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


    Original     		PDF IDH20G65C5

    ASTM D2103

    Abstract: ASTM F1249 ESD S11.11 ESD-DS11 PET FILM ASTM D2103 - 10
    Text: Low Charging Polyethylene Zipper STATSHIELD M/O SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Typical Values Test Procedures/Method <108 ohms <102 ohms <1011 ohms EOS/ESD S11.11 EOS/ESD S11.11


    Original     		PDF MIL-PRF-81705D, EOS/ESD-DS11 ESD-DS11 ASTM D2103 ASTM F1249 ESD S11.11 PET FILM ASTM D2103 - 10

    48500

    Abstract: d2103
    Text: RICHMOND 8300 SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Typical Values Test Procedures/Method <1011 ohms <102 ohms <1011 ohms Static Shielding Charge Generation nC/in2 Capacitance Probe (to dissipate 1 KV)


    Original     		PDF 541/Appendix D-2103 48500 d2103

    STM11

    Abstract: D2103 MIL-STD-3010 ASTM D2103 10E2 ASTM D1004 ASTM D2103 - 10
    Text: STATSHIELD M/I SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Side Weld Seals 3/8 in. Statshield® bags are packaged 100 per package in an oversized shielding bag rather than a cardboard box.


    Original     		PDF Mil-PRF81705D, STM11 D2103 MIL-STD-3010 ASTM D2103 10E2 ASTM D1004 ASTM D2103 - 10

    ESD S11.11

    Abstract: D1422 ASTM D2103 10 D2065
    Text: STATSHIELD M/I SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding - Energy Penetration Charge Generation Typical Values Test Procedures/Method <1010 ohms <102 ohms <1010 ohms <15 nJ nanojoules


    Original     		PDF MIL-PRF-81705D, EOS/ESD-DS11 ESDDS11 ESD S11.11 D1422 ASTM D2103 10 D2065

    ASTM D2103 type 5

    Abstract: ESD S11.11 Desco Industries 81705 MIL-PRF81705D ASTM D2103
    Text: STATSHIELD M/I SERIES Low Charging Polyethylene Zipper Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Typical Values Test Procedures/Method <1011 ohms <102 ohms <1011 ohms


    Original     		PDF MIL-PRF-81705D, EOS/ESD-DS11 ESDDS11 ASTM D2103 type 5 ESD S11.11 Desco Industries 81705 MIL-PRF81705D ASTM D2103

    transistor D2058

    Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
    Text: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do


    Original     		PDF C2000 transistor D2058 K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010

    ESD S11.11

    Abstract: ASTM D2103 10
    Text: STATSHIELD M/I SERIES Specifications: Electrical Properties Surface Resistance: Outer Surface Aluminum Layer Inner Surface Static Shielding Charge Generation Typical Values Test Procedures/Method <1011 ohms <102 ohms <1011 ohms <25 nJ Teflon: 0.09 nC/sq. in.


    Original     		PDF MIL-PRF-81705D, EOS/ESD-DS11 ESDDS11 ESD S11.11 ASTM D2103 10

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


    OCR Scan     		PDF AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922