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    D20N03 Search Results

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    D20N03 Price and Stock

    onsemi NTD20N03L27T4G

    MOSFET N-CH 30V 20A DPAK
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    DigiKey NTD20N03L27T4G Cut Tape 5,639 1
    • 1 $1.84
    • 10 $1.171
    • 100 $1.84
    • 1000 $0.57202
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    NTD20N03L27T4G Digi-Reel 5,639 1
    • 1 $1.84
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    NTD20N03L27T4G Reel 2,500 2,500
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    Avnet Americas NTD20N03L27T4G Reel 0 Weeks, 2 Days 1,137
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    NTD20N03L27T4G Reel 13 Weeks 2,500
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    Mouser Electronics NTD20N03L27T4G 26,502
    • 1 $1.84
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    • 100 $0.786
    • 1000 $0.57
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    Newark NTD20N03L27T4G Cut Tape 6,555 1
    • 1 $1.69
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    NTD20N03L27T4G Reel 2,500
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    Bristol Electronics NTD20N03L27T4G 5,507
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    NTD20N03L27T4G 239
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    Rochester Electronics NTD20N03L27T4G 2,500 1
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    ComSIT USA NTD20N03L27T4G 1,948
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    Richardson RFPD NTD20N03L27T4G 2,500
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    Avnet Asia NTD20N03L27T4G 13 Weeks 2,500
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    Avnet Silica NTD20N03L27T4G 14 Weeks 2,500
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    EBV Elektronik NTD20N03L27T4G 15 Weeks 2,500
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    Flip Electronics NTD20N03L27T4G 2,500
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    Win Source Electronics NTD20N03L27T4G 25,115
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    Wuhan P&S NTD20N03L27T4G 1 1
    • 1 $1.36
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    • 100 $0.87
    • 1000 $0.66
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    UMW NTD20N03L27T4G

    MOSFET N-CH 30V 20A DPAK
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    DigiKey NTD20N03L27T4G Cut Tape 2,497 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
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    NTD20N03L27T4G Digi-Reel 2,497 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
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    NTD20N03L27T4G Reel 2,500
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    Rochester Electronics LLC RFD20N03

    N-CHANNEL POWER MOSFET
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    DigiKey RFD20N03 Bulk 740
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    Infineon Technologies AG IPD20N03L

    MOSFET N-CH 30V 30A TO252-3
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    Infineon Technologies AG IPD20N03L-G

    MOSFET N-CH 30V 30A TO252-3
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    D20N03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V


    Original
    SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V


    Original
    SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L Tube/TO-252 O-252 PDF

    D20N03L

    Abstract: D20N03
    Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original
    U/D20N03L O-252 O-251 O-252AA Tube/TO-252 O-252 D20N03L D20N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original
    U/D20N03L O-252 O-251 O-252AA O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDU/D20N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( mW ) TYP Rugged and reliable. 13 @ VGS = 10V 30V TO-252 and TO-251 Package.


    Original
    SDU/D20N03L O-252 O-251 O-252AA PDF

    lm358n KEY 71

    Abstract: 4,7k thermistor W83391
    Text: W83L786NR WINBOND H/W MONITORING IC -I- Publication Release Date: November 26, 2004 Revision 0.7 W83L786NR Preliminary Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 5 10/15/04


    Original
    W83L786NR lm358n KEY 71 4,7k thermistor W83391 PDF

    DM2016

    Abstract: MOSFET transistor 4-573 MTD20N03HDL AN569 mrc t4 U1600
    Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet HDTM O S E-FE T ™ High D ensity P o w er FET DPAK for S u rfa c e M ount D20N03HDL M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand


    OCR Scan
    MTD20N03HDL 0E-05 LOE-04 0E-03 OE-02 0E-01 DM2016 MOSFET transistor 4-573 MTD20N03HDL AN569 mrc t4 U1600 PDF