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    D2406 TRANSISTOR Search Results

    D2406 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

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    Catalog Datasheet MFG & Type Document Tags PDF

    D2406 transistor

    Abstract: D2406 2SD2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SD2406 D2406 transistor D2406 2SD2406 PDF

    D2406 transistor

    Abstract: 2SD2406 D2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SD2406 D2406 transistor 2SD2406 D2406 PDF

    D2406 transistor

    Abstract: No abstract text available
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SD2406 2-10R1A D2406 transistor PDF