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    onsemi NVMJS1D3N04CTWG

    MOSFET N-CH 40V 41A/235A 8LFPAK
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    DigiKey NVMJS1D3N04CTWG Reel 6,000 3,000
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    onsemi NTMYS5D3N04CTWG

    MOSFET N-CH 40V 19A/71A 4LFPAK
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    DigiKey NTMYS5D3N04CTWG Digi-Reel 3,003 1
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    NTMYS5D3N04CTWG Cut Tape 3,003 1
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    Mouser Electronics NTMYS5D3N04CTWG 3,031
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    Newark NTMYS5D3N04CTWG Cut Tape 28 1
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    Rochester Electronics NTMYS5D3N04CTWG 1,949 1
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    Richardson RFPD NTMYS5D3N04CTWG 3,000
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    onsemi NVMYS5D3N04CTWG

    MOSFET N-CH 40V 19A/71A 4LFPAK
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    DigiKey NVMYS5D3N04CTWG Reel 3,000 3,000
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    Mouser Electronics NVMYS5D3N04CTWG 2,980
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    Newark NVMYS5D3N04CTWG Cut Tape 5,980 5
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    Rochester Electronics NVMYS5D3N04CTWG 2,706 1
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    onsemi NVMYS3D3N06CLTWG

    MOSFET N-CH 60V 26A/133A 4LFPAK
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    DigiKey NVMYS3D3N06CLTWG Reel 3,000 3,000
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    Mouser Electronics NVMYS3D3N06CLTWG 2,975
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    onsemi NTMYS9D3N06CLTWG

    MOSFET N-CH 60V T6 LFPAK4
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    DigiKey NTMYS9D3N06CLTWG Cut Tape 2,995 1
    • 1 $2.13
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    Richardson RFPD NTMYS9D3N06CLTWG 3,000
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    D3N0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS


    Original
    PDF MMDF3N02HD/D MMDF3N02HD MMDF3N02HD/D* AN569 D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310

    d3n04h

    Abstract: D3N04 AN569 MMDF3N04HD MMDF3N04HDR2 SMD310
    Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode


    Original
    PDF MMDF3N04HD MMDF3N04HD/D d3n04h D3N04 AN569 MMDF3N04HD MMDF3N04HDR2 SMD310

    D3N02

    Abstract: MMDF3N02HD
    Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original
    PDF MMDF3N02HD MMDF3N02HD/D D3N02

    d3n04h

    Abstract: No abstract text available
    Text: MMDF3N04HD Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source


    Original
    PDF MMDF3N04HD MMDF3N04HD/D d3n04h

    d3n03

    Abstract: AN569 MMDF3N03HD MMDF3N03HDR2
    Text: MMDF3N03HD Preferred Device Power MOSFET 3 Amps, 30 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original
    PDF MMDF3N03HD r14525 MMDF3N03HD/D d3n03 AN569 MMDF3N03HD MMDF3N03HDR2

    D3N02

    Abstract: AN569 MMDF3N02HD MMDF3N02HDR2
    Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original
    PDF MMDF3N02HD r14525 MMDF3N02HD/D D3N02 AN569 MMDF3N02HD MMDF3N02HDR2

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original
    PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    d3n04h

    Abstract: MMDF3N04HDR2G d3n0 D3N04 AN569 MMDF3N04HD MMDF3N04HDR2
    Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source


    Original
    PDF MMDF3N04HD MMDF3N04HD/D d3n04h MMDF3N04HDR2G d3n0 D3N04 AN569 MMDF3N04HD MMDF3N04HDR2

    D3N03

    Abstract: MMDF3N03HD MMDF3N03HDR1 MMDF3N03HDR2 marking LJY
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Sutiace Mount Products TMOS Dual N“Channel Fie!d Effect Wansistors MiniMOST” devices are an advanced series of power MOSFETS which utilize Motorola’s High Cell Density HDTMOS process.


    Original
    PDF MMDF3N03HD D3N03 MMDF3N03HD MMDF3N03HDR1 MMDF3N03HDR2 marking LJY

    d3n06

    Abstract: MMDF3N06HDR2
    Text: MMDF3N06HD Preferred Device Advance Information Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power


    Original
    PDF MMDF3N06HD r14525 MMDF3N06HD/D d3n06 MMDF3N06HDR2

    d3n06

    Abstract: MMDF3N06HD MMDF3N06HDR2 SMD310 AN569
    Text: MOTOROLA Order this document by MMDF3N06HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMDF3N06HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 60 VOLTS RDS on = 100 mW


    Original
    PDF MMDF3N06HD/D MMDF3N06HD d3n06 MMDF3N06HD MMDF3N06HDR2 SMD310 AN569

    Untitled

    Abstract: No abstract text available
    Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original
    PDF MMDF3N02HD MMDF3N02HD/D

    D3N06

    Abstract: MiniMOS AN569 MMDF3N06HD MMDF3N06HDR2 SMD310
    Text: MMDF3N06HD Preferred Device Advance Information Power MOSFET 3 Amps, 60 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power


    Original
    PDF MMDF3N06HD r14525 MMDF3N06HD/D D3N06 MiniMOS AN569 MMDF3N06HD MMDF3N06HDR2 SMD310

    Untitled

    Abstract: No abstract text available
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    20n03

    Abstract: S3NI
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    PDF 03JUN05 31MAR2000

    d3n04h

    Abstract: D3N04
    Text: MOTOROLA O rder th is docum ent by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMDF3N04HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N -C hannel Field E ffect Transistor DUAL TMOS POWER MOSFET 3.4 AMPERES


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    PDF MMDF3N04HD/D MMDF3N04HD MMDF3N04HDD d3n04h D3N04

    d3n03

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High C ell D ensity H D TM O S process.


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    PDF MMDF3N03HD d3n03