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    D49 MARKING DIODE Search Results

    D49 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    D49 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAY84

    Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
    Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240


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    PDF 350mW BAL99 BAR99 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 BAY84 BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high


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    PDF CMPD5001 CMPD5001S OT-23 100mA 200mA 400mA 26-September

    D49 diode

    Abstract: sot 23 marking code R4 CMPD5001 CMPD5001S DIODE MARKING CODE SOT23
    Text: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching


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    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 100mA 200mA 400mA 25-January D49 diode sot 23 marking code R4 CMPD5001S DIODE MARKING CODE SOT23

    Untitled

    Abstract: No abstract text available
    Text: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching


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    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 100mA 200mA 400mA 25-January

    D49 transistor

    Abstract: CMPD5001 CMPD5001S diode da2
    Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE Description: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 100mA 200mA 400mA 23-June D49 transistor CMPD5001S diode da2

    diode da2

    Abstract: IRIF
    Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    PDF CMPD5001 CMPD5001S OT-23 100mA 200mA 400mA diode da2 IRIF

    CMPD5001

    Abstract: CMPD5001S
    Text: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load


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    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 150oC 100mA 200mA 400mA CMPD5001S

    DIODE D28 06

    Abstract: DIODE D38 -06 DIODE D38 06 DIODE D28 DIODE D28 04 10-FZ062TA030FB02-P983D38 p983
    Text: 10-F0062TA030 FB/FB03)-P983(D19/D49) preliminary datasheet flow PFC 0 600 V/ 2 x 15 A / 50 kHz Features flow 0 housing ● Vincotech clip-in housing ● Compact and low inductance design ● Suitable for Interleaved topology


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    PDF 10-FZ062TA030 FB/FB01/FB02/FB03 -P983 D18/D28/D38/D48) 10-F0062TA030 FB/FB03 D19/D49) 062TA030FB FZ062TA030FB01 DIODE D28 06 DIODE D38 -06 DIODE D38 06 DIODE D28 DIODE D28 04 10-FZ062TA030FB02-P983D38 p983

    D70 SOT23

    Abstract: D46 diode dual zener MARKING D53 SOT23 marking D58 AZ23C3V0 d54 marking marking code d47 MARKING D53 PART NUMBER MARKING d45
    Text: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two


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    PDF AZ23-V-G-Series 2002/95/EC 2002/96/EC GS18/10K 10K/box GS08/3K 15K/box 18-Jul-08 D70 SOT23 D46 diode dual zener MARKING D53 SOT23 marking D58 AZ23C3V0 d54 marking marking code d47 MARKING D53 PART NUMBER MARKING d45

    D55 SOT 23-5

    Abstract: D70 SOT23 MARKING D53 SOT23 D56 SOT23 AZ23B3V9-V-G D61 SOT-23 marking D58 marking D63 D45 SOT23 AZ23C6V2-V-G
    Text: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two


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    PDF AZ23-V-G-Series AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 18-Jul-08 D55 SOT 23-5 D70 SOT23 MARKING D53 SOT23 D56 SOT23 AZ23B3V9-V-G D61 SOT-23 marking D58 marking D63 D45 SOT23 AZ23C6V2-V-G

    AZ23B3V9-V-G

    Abstract: D70 SOT23 D50 SOT23
    Text: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two


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    PDF AZ23-V-G-Series 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 18-Jul-08 AZ23B3V9-V-G D70 SOT23 D50 SOT23

    marking D63

    Abstract: No abstract text available
    Text: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two


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    PDF AZ23-V-G-Series AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 11-Mar-11 marking D63

    AZ23B3V9-V-G

    Abstract: D41 marking D61 SOT-23
    Text: AZ23-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one


    Original
    PDF AZ23-V-G-Series AEC-Q101 2002/95/EC 2002/96/EC AZ23-V-G-series 11-Mar-11 AZ23B3V9-V-G D41 marking D61 SOT-23

    marking code d47

    Abstract: marking D63 D61 SOT-23
    Text: AZ23-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one


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    PDF AZ23-V-G-Series AEC-Q101 2002/95/EC 2002/96/EC AZ23-V-G-series 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 marking code d47 marking D63 D61 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Central” CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high


    OCR Scan
    PDF CMPD5001 CMPD5001S OT-23 Re100mA 200mA 400mA 26-September

    338 sot-23

    Abstract: D49 diode LF MARKING CODE 338 marking code LF400
    Text: Central“ CMPD5001 CMPD5001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


    OCR Scan
    PDF CMPD5001 CMPD5001S OT-23 CMPD5001S CPD41 338 sot-23 D49 diode LF MARKING CODE 338 marking code LF400

    Untitled

    Abstract: No abstract text available
    Text: Central’ CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load


    OCR Scan
    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 100mA 200mA 400mA

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPD5001 CMPD5001S semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load


    OCR Scan
    PDF CMPD5001 CMPD5001S CMPD5001 OT-23 200mA 400mA 100ii

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load


    OCR Scan
    PDF CMPD5001 CMPD5001S OT-23 CMPD5001S 100mA 200mA 400mA CMPD5001

    marking "3AA"

    Abstract: CMPD5001 CMPD5001S
    Text: Central CMPD5001 CMPD5001S S em ico n d u cto r Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed forswitching inductive load


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    PDF CMPD5001 CMPD5001S OT-23 100mA 200mA 400mA marking "3AA" CMPD5001S

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load


    OCR Scan
    PDF CMPD5001 CMPD5001S OT-23 CMPD5001S 100mA CMPD5001

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load


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    PDF CMPD5001 CMPD5001S OT-23 CMPD5001S 100mA 200mA 400mA CMPD5001

    BAX12

    Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
    Text: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)


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    PDF BAX12 BAX12 BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes

    bay85

    Abstract: BAX12 BAY85S AT25 MA marking
    Text: S G S-THOHSON 71C D fl 7 ^ 2 ^ 3 7 DQDS137 4 | SEMICONDUCTORS GENERAL PURPOSEAND SMHTEUffim m VR Vr m * lF AV (V) (mA) max (V) (mA) CHARACTERISTICS A T 25 °C Ir @ Vr Ir @ Vr Tamb = 150 °C max max max (nA) (V) (| iA) (V) (pF) BAL 99 70 70 1,3 100 2500 70


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    PDF DQDS137 bas16 bax12 bay85 baw56 bav74 kbav70 kbav99 kbay85s bay85 BAX12 BAY85S AT25 MA marking