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    BAS35 Price and Stock

    Diotec Semiconductor AG BAS35

    DIODE ARRAY GP 90V 200MA SOT23-3
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    DigiKey BAS35 Reel 93,000 3,000
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    BAS35 Bulk 3,000
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    Mouser Electronics BAS35 5,768
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    Verical BAS35 3,000 3,000
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    Onlinecomponents.com BAS35
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    Chip1Stop BAS35 5,993
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    Master Electronics BAS35
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    Rochester Electronics LLC BAS35,215

    DIODE ARR AVAL 90V 250MA TO236AB
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    DigiKey BAS35,215 Bulk 60,000 6,968
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    onsemi BAS35

    DIODE ARRAY GP 120V 200MA SOT23
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    DigiKey BAS35 Reel 3,000 3,000
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    BAS35 Cut Tape 2,170 1
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    BAS35 Digi-Reel 1
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    Avnet Americas BAS35 Reel 15,000 9 Weeks 9,000
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    BAS35 Reel 4 Weeks 3,988
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    Mouser Electronics BAS35 17,396
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    Verical BAS35 12,000 144
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    Newark BAS35 Cut Tape 5,071 5
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    BAS35 Reel 3,000
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    BAS35 Reel 9,000
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    Future Electronics BAS35 Reel 24,000 17 Weeks 3,000
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    BAS35 Reel 17 Weeks 27,000
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    Onlinecomponents.com BAS35
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    Bristol Electronics BAS35 54 23
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    Quest Components BAS35 43
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    Rochester Electronics BAS35 31,161 1
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    TME BAS35 2,973 1
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    Avnet Asia BAS35 9 Weeks 15,000
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    Avnet Silica BAS35 10 Weeks 3,000
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    Chip1Stop BAS35 12,000
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    EBV Elektronik BAS35 3,000 11 Weeks 3,000
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    Flip Electronics BAS35 3,000
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    New Advantage Corporation BAS35 3,000 1
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    Nexperia BAS35,215

    DIODE ARR AVAL 90V 250MA TO236AB
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    DigiKey BAS35,215 Reel 3,000 3,000
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    BAS35,215 Cut Tape 874 1
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    BAS35,215 Digi-Reel 1
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    Mouser Electronics BAS35,215 6,695
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    Verical BAS35,215 231,000 3,000
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    Newark BAS35,215 Cut Tape 5
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    BAS35,215 Reel 3,000
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    Rochester Electronics BAS35,215 78,590 1
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    TTI BAS35,215 Reel 18,000
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    TME BAS35,215 1,670 1
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    Avnet Asia BAS35,215 15,000 6 Weeks 3,000
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    Avnet Silica BAS35,215 24,000 8 Weeks 3,000
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    EBV Elektronik BAS35,215 12,000 8 Weeks 3,000
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    DComponents BAS35

    DIODE ARRAY GP 90V 200MA SOT23-3
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    DigiKey BAS35 Reel 750
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    BAS35 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BAS35 Continental Device India Silicon Planar Epitaxial High Speed Diode Original PDF
    BAS35 Fairchild Semiconductor Small Signal Diode Original PDF
    BAS35 Fairchild Semiconductor General Purpose High Voltage Diode Original PDF
    BAS35 Kexin General Purpose Controlled Avalanche Diodes Original PDF
    BAS35 NXP Semiconductors BAS35 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: dual c.a. ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V Original PDF
    BAS35 Philips Semiconductors General purpose controlled avalanche (double) diodes Original PDF
    BAS35 Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
    BAS35 RFE International Rectifier Diode, Switching Diode, Dual Common Anode, 120 MinV, SOT-23, 3-Pin Original PDF
    BAS35 Transys Electronics SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Original PDF
    BAS35 TY Semiconductor TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 Original PDF
    BAS35 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
    BAS35 Jinan Gude Electronic Device SURFACE MOUNT SWITCHING DIODES Scan PDF
    BAS35 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS35 National Semiconductor Pro Electron Surface Mount Diodes Scan PDF
    BAS35 National Semiconductor Diode Pro Electron Series Scan PDF
    BAS35 National Semiconductor Silicon Single Junction Diodes Scan PDF
    BAS35 National Semiconductor Diode - Pro Electron Series Scan PDF
    BAS-350 Citel 2-Element Surge Arrester Gas Discharge Tube Original PDF
    BAS35,215 NXP Semiconductors General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: dual c.a. ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BAS35_NL Fairchild Semiconductor General Purpose High Voltage Diode Original PDF

    BAS35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original
    PDF BAS35 OT-23 MMBD1401

    BAS29

    Abstract: BAS31 BAS35 l21 smd code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Surface Mount Small Signal Double Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-06-21 1.1 2.9 ±0.1 0.4 Power dissipation Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung 2.5 ±0.1 1.3


    Original
    PDF BAS35 OT-23 O-236)

    BAS35

    Abstract: MMBD1401
    Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 L22 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original
    PDF BAS35 OT-23 MMBD1401 BAS35

    smd code marking A8 diode

    Abstract: BAS31 BAS35 BAS29 smd diode marking v2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 2001 Oct 10 2003 Mar 20 Philips Semiconductors Product specification General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode BAS31 BAS35 BAS29 smd diode marking v2

    BAS35

    Abstract: MMBD1401
    Text: BAS35 BAS35 CONNECTION DIAGRAMS 3 3 3 29 2 SOT-23 1 2 1 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original
    PDF BAS35 OT-23 MMBD1401 BAS35

    code a1 SMD

    Abstract: smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 code a1 SMD smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35

    BAS31

    Abstract: BAS35 doppeldiode
    Text: BAS31 BAS35 BAS31 BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2009-11-26 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


    Original
    PDF BAS31 BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 doppeldiode

    smd L21

    Abstract: BAS29 BAS31 BAS35
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS


    Original
    PDF ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31

    BAS31

    Abstract: BAS35
    Text: BAS31, BAS35 BAS31, BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2011-10-11 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


    Original
    PDF BAS31, BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-01 0.4 Power dissipation Verlustleistung 1.1 2.9 ±0.1 2 .5 ± 0 .1 Type Code 1 .3 m ax 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2


    Original
    PDF BAS35 OT-23 O-236)

    Untitled

    Abstract: No abstract text available
    Text: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector


    Original
    PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29

    BAS29

    Abstract: BAS31 BAS35 MBG440
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 MBG440

    BAS35

    Abstract: No abstract text available
    Text: BAS35 BAS35 Surface Mount Small Signal Double Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-06-21 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung 310 mW Repetitive peak reverse voltage


    Original
    PDF BAS35 OT-23 O-236) UL94V-0 BAS35

    L21 SMD

    Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
    Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original
    PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:


    OCR Scan
    PDF BAS29; BAS31; BAS35 BAS29 BAS31 M8H32

    BAS29

    Abstract: l21 code SOT23 DIODE marking CODE AV L21 SOT23 bas35 Philips MBB BAS31
    Text: • l][]542fl2 438 HIAPX N AMER PHILIPS/DISCRETE BAS 29 BAS31 BAS35 b7E J> SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists o f a single diode. The BAS31 has tw o diodes in series and the BAS35 has two


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    PDF bb53T3i BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29 l21 code SOT23 DIODE marking CODE AV L21 SOT23 Philips MBB

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche


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    PDF BAS29; BAS31; BAS35 BAS31 BAS35 BAS29 115002/00/03/pp12

    Untitled

    Abstract: No abstract text available
    Text: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.


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    PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29

    BAS29

    Abstract: BAS31 BAS35 diode 7B4
    Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21


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    PDF D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4

    BAS29

    Abstract: BAS31 BAS35 l21 diode marking
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B AS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.48 0.38


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- BAS29 l21 diode marking

    BAS3590

    Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
    Text: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100


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    PDF BA128 DO-35 BA129 BA130 BA217 BA218 BAS3590 BAY71 BA316 BA317 BA318