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    D9842 Search Results

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    D9842 Price and Stock

    Rochester Electronics LLC AD9842AJST

    COMPLETE 20 MSPS CCD SIGNAL PROC
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    DigiKey AD9842AJST Bulk 22
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    ROHM Semiconductor BD9842FV-E2

    IC REG CTRLR BUCK 20SSOP
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    DigiKey BD9842FV-E2 Reel 2,500
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    BD9842FV-E2 Digi-Reel 1
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    BD9842FV-E2 Cut Tape 1
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    Mouser Electronics BD9842FV-E2
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    Samtec Inc HW-04-14-S-D-984-238

    CONN HDR 8POS 0.1 STACK T/H
    Free Sample
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    DigiKey HW-04-14-S-D-984-238 Bulk 1
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    Avnet Americas HW-04-14-S-D-984-238 Bulk 1
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    Mouser Electronics HW-04-14-S-D-984-238
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    Powell Electronics HW-04-14-S-D-984-238 383 1
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    Master Electronics HW-04-14-S-D-984-238
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    Sager HW-04-14-S-D-984-238 581 1
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    JRH Electronics ZW-10-14-L-D-984-275

    STACKING BOARD CONNECTOR, ZW SER
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    DigiKey ZW-10-14-L-D-984-275 Bulk 1
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    Samtec Inc ZW-10-14-L-D-984-275

    CONN BRD STACK .100" 20POS
    Free Sample
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    DigiKey ZW-10-14-L-D-984-275 Bulk 1
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    Avnet Americas ZW-10-14-L-D-984-275 Bulk 1
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    Mouser Electronics ZW-10-14-L-D-984-275
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    Newark ZW-10-14-L-D-984-275 Bulk 1
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    Powell Electronics ZW-10-14-L-D-984-275 110 1
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    Sager ZW-10-14-L-D-984-275 167 1
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    D9842 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TAPE AMMO PACK TO92

    Abstract: TO-92 Package Dimensions
    Text: TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV: Package Information TO-92 Tape and Reel Data and Package Dimensions


    Original     		CBVK741B019 PN2222N D9842 F63TNR 375mm 267mm CBVK741B019 PN222N TAPE AMMO PACK TO92 TO-92 Package Dimensions PDF

    D72Z

    Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
    Text: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		O-226AE O-226 CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR D9842AB D72Z CBVK741B019 PN2222N D73Z J32Z PDF

    2N4401_D11Z

    Abstract: PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 F63TNR Fairchild taping TO-92 transistor k 0247 J60Z
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		CBVK741B019 PN2222N D9842 F63TNR F63TNR PN222N D9842AB F63TNR) 375mm 2N4401_D11Z PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 Fairchild taping TO-92 transistor k 0247 J60Z PDF

    PN2222N

    Abstract: BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 F63TNR
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV:


    Original     		CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR 375mm PN2222N BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 PDF

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor PDF

    On semiconductor date Code sot-223

    Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
    Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BCP56 OT-223 On semiconductor date Code sot-223 BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions PDF

    CBVK741B019

    Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
    Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide


    Original     		FDS6814 CBVK741B019 F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.


    Original     		FDS3690 PDF

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V


    Original     		FDS2670 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4420DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si9945DY PDF

    FDR835N

    Abstract: 831N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDR6678A FDR835N 831N PDF

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70 PDF

    2539a

    Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
    Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate


    Original     		FDS5670 FDS5670 2539a IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4936DY PDF

    Untitled

    Abstract: No abstract text available
    Text: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDT434P PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9435A PDF

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N F852 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		FD8305N FDR8305N PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		Si4953DY PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate


    Original     		FDC6327C PDF

    AA MARKING CODE SO8

    Abstract: No abstract text available
    Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		FDS6680S FDS6680S FDS6680 AA MARKING CODE SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W


    Original     		FDC5612 PDF