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    Intel Corporation DA28F640J5A150

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    Intel Corporation DA28F640J5-150

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    Intel Corporation DA28F640J5A-150

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    Intel Corporation DA28F640J5150

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    DA28F640J5 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DA28F640J5-150 Intel StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT Original PDF
    DA28F640J5-150 Intel Flash Memory, 64Mbit, Sectored, 5V Supply, SOP, 56-Pin Original PDF
    DA28F640J5A150 Intel Flash, 5V Intel Strata Flash Memory Original PDF

    DA28F640J5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DA28F320J5

    Abstract: No abstract text available
    Text: CIC-56SS-40D-B6-TI 56-Lead SSOP to a 40-Pin DIP Mar-98 EXAMPLES SSOP DEVICES: A DA28F016XS DA28F160S3 / S5 B DA28F320S3 / S5 C PIN CONFIGURATION: DA28F320J5 DA28F640J5 SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $180.00


    Original     		PDF CIC-56SS-40D-B6-TI 56-Lead 40-Pin Mar-98 DA28F016XS DA28F160S3 DA28F320S3 CSP056-054 DA28F320J5

    CIC-56SS-48D-B6-TI

    Abstract: DA28F320j5 DA28F160S3 DA28F640J5
    Text: CIC-56SS-48D-B6-TI 56-Lead SSOP to a 48-Pin DIP Mar-98 EXAMPLES SSOP DEVICES: A DA28F016XS DA28F160S3 / S5 B DA28F320S3 / S5 C PIN CONFIGURATION: BASE 48-Pin DIP DA28F320J5 DA28F640J5 SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24


    Original     		PDF CIC-56SS-48D-B6-TI 56-Lead 48-Pin Mar-98 DA28F016XS DA28F160S3 DA28F320S3 DA28F320J5 DA28F640J5 CIC-56SS-48D-B6-TI DA28F320j5 DA28F640J5

    SH7751

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    ABB DATA SHEET DCS

    Abstract: SH7751 EPF10K20RC208-3 Hitachi DSA00380
    Text: SH7641 E10A Emulator User’s Manual SH7641 E10A HS7641KCM01HE Renesas Microcomputer Development Environment System Rev.1.00 2003.6.26 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor


    Original     		PDF SH7641 HS7641KCM01HE REJ10B0010-0100H ABB DATA SHEET DCS SH7751 EPF10K20RC208-3 Hitachi DSA00380

    intel topside mark

    Abstract: 28F320J5 28F640J5 DA28F320J5-100 DA28F320J5-120 DA28F640J5-150 E28F320J5-100 E28F320J5-120 G28F640J5-150 intel DOC
    Text: Intel StrataFlash Memory 32 and 64 Mbit SPECIFICATION UPDATE Release Date: September 1998 Order Number: 297848-010 The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are


    Original     		PDF 28F320J5 28F640J5 32/64-Mb 32-Mb intel topside mark DA28F320J5-100 DA28F320J5-120 DA28F640J5-150 E28F320J5-100 E28F320J5-120 G28F640J5-150 intel DOC

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    292235

    Abstract: 28F016SV 28F160S5 28F320J5 28F640J5
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte AP-647 AP-646 AP-644 292235 28F016SV 28F160S5 28F640J5

    phase controller L120

    Abstract: 28F032SA 28F160S5 28F320J5 28F320S5 28F640J5 "NOR Flash" intel retention
    Text: E PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 n n n n n n High-Density Symmetrically-Blocked Architecture  64 128-Kbyte Erase Blocks 64 M  32 128-Kbyte Erase Blocks (32 M) 5V VCC Operation  2.7V I/O Capable


    Original     		PDF 28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 AP-646 AP-647 phase controller L120 28F032SA 28F160S5 28F320S5 28F640J5 "NOR Flash" intel retention

    TSOP56

    Abstract: 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 October 7, 1997 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer


    Original     		PDF FM3-83 TSOP56 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE

    29060

    Abstract: No abstract text available
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte AP-660 AP-647 AP-646 AP-644 29060

    AP-647

    Abstract: 29060
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte AP-660 AP-647 AP-646 AP-644 29060

    29060

    Abstract: No abstract text available
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte AP-660 AP-647 AP-646 AP-644 29060

    E28F320J5A-120

    Abstract: da28f640j5a150 28F016SA 28F016SV 28F032SA 28F160S5 28F320J5 28F640J5 Migration Guide for Intel StrataFlash Memory J 03BCD
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte x8/x16 DA28F320J5-120 DA28F640J5-150 E28F320J5-120 E28F320J5A-120 da28f640j5a150 28F016SA 28F016SV 28F032SA 28F160S5 28F640J5 Migration Guide for Intel StrataFlash Memory J 03BCD

    intel topside mark

    Abstract: 297848 DA28F640J5-150 DA28F320j5 120 28F320J5 28F640J5 DA28F320J5-100 DA28F320J5-120 E28F320J5-120 G28F640J5-150
    Text: 5 Volt Intel StrataFlash Memory 32 and 64-Mbit Specification Update April 2001 Notice: The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized


    Original     		PDF 64-Mbit 28F320J5 28F640J5 32-Mb 64-Mb 64-Mbit 32-Mb intel topside mark 297848 DA28F640J5-150 DA28F320j5 120 DA28F320J5-100 DA28F320J5-120 E28F320J5-120 G28F640J5-150

    TN80C196KC20

    Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
    Text: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


    Original     		PDF PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224

    Device-List

    Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
    Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera


    Original     		PDF LabTool-48 AC29LV400B AC29LV400T M6759 M8720 AS29F040 Device-List NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15

    renesas CAM

    Abstract: ABB Group LOGO TD text display SH7710 SH7751 epf10k10aqc208-3 EPF10K20RC208-3 SHE10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    ABB Group

    Abstract: EPF6024AQC208 EPF6024AQC208-2 SH7290 SH7751 5225 hitachi J196
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    DA28F640

    Abstract: 29060 A1A22
    Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation


    Original     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte AP-660 AP-647 AP-646 AP-644 DA28F640 29060 A1A22

    TSOP56

    Abstract: PLCC32 socket tsop56 socket BIOS PLCC32 socket MBGA48 psop44 TSOP*56 DD28F032SA E28F008SA GT28F640J5
    Text: Intel Corporation Flash Products Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 March 20, 1998 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer


    Original     		PDF FM3-83 TSOP56 PLCC32 socket tsop56 socket BIOS PLCC32 socket MBGA48 psop44 TSOP*56 DD28F032SA E28F008SA GT28F640J5

    "NOR Flash" intel 28f

    Abstract: 29060
    Text: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set


    OCR Scan     		PDF 28F320J5 28F640J5 x8/x16) 128-Kbyte 32-Byte 16-Mbit "NOR Flash" intel 28f 29060

    F1H16

    Abstract: 29060
    Text: PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set


    OCR Scan     		PDF 28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 F1H16 29060

    5 PEN PC TECHNOLOGY free

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support


    OCR Scan     		PDF 28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 5 PEN PC TECHNOLOGY free

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW in te i INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) 5V Vcc Operation — 2.7V I/O Capable


    OCR Scan     		PDF 28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 4fi2bl75