transistor BD 677
Abstract: BD 675 BD675 677d
Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington
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T-33-29
BD679
a23SbOS
00043RS
BD675,
transistor BD 677
BD 675
BD675
677d
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MJE1100
Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70
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MJ4200
MJ4000
MJD6039
MJD6039-1
2SD1520
2SD1414
2SD1933
MJE1100
MJ4001
SDN201
BD263B
Motorola transistors MJE1102
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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ULQ2003
Abstract: 2004a darlington dip 16 SO16 package AEC-Q100 ULQ2001 ULQ2001A ULQ2003A ULQ2004
Text: ULQ2001 ULQ2003 - ULQ2004 Seven Darlington array Features • Seven Darlington per package ■ Extended temperature range: -40 to 105 °C ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Automotive Grade product in SO16 package
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ULQ2001
ULQ2003
ULQ2004
ULQ2001,
ULQ2004
2004a
darlington dip 16
SO16 package
AEC-Q100
ULQ2001
ULQ2001A
ULQ2003A
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Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR
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MJ10023/D
MJ10023
Motorola AN222A
application MJ10023
U430B
motorola 222A
motorola SPS bipolar
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relay 04501
Abstract: D45D2 b0712 D45D1 D45D5 04501 relay 04503 8712 RESISTOR D45D D45D3
Text: VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS D45D Series -40 - -80 VOLTS -6 AMP, 30 WATTS COMPLEMENTARY TO THE D44D SERIES The General Electric D45D isa Darlington power transistor. It is designed for general purpose switching of m ulti-ampere loads directly from low level logic circuitry. A monolithic bias
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T0-220AB
relay 04501
D45D2
b0712
D45D1
D45D5
04501 relay
04503
8712 RESISTOR
D45D
D45D3
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D44D1
Abstract: D44D2 D44D3 D44D5 D45D D44D
Text: VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS D44D Series 40-80 VOLTS 6 AMP, 30 WATTS COMPLEMENTARY TO THE D45D SERIES The General Electric D44D Is a Darlington power transistor. It is designed for general purpose switching of m ulti-ampere loads directly from low level logic circuitry. A monolithic bias
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T0-220AB
D44D1
D44D2
D44D3
D44D5
D45D
D44D
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2N6427
Abstract: 2N6426
Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc
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2N6426*
2N6427
r14525
2N6426/D
2N6427
2N6426
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NPN Transistor TO92 5V 200mA
Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K
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GES5305
2K-20K
200mA,
200MA
GES5306
/K-70K
GES5306A
7K-70K.
NPN Transistor TO92 5V 200mA
2N3877A
GES5307
GES6220
D38L1-3
GES5308
GES5308A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage
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MMBT6427LT1
-236A
b3b7255
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KSH200
Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Text: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP
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MMBTA63
MMBTA64
MMBT6427
TMPT6427
MMBTA13
MMBTA14
MMBT3640
KSH200
BUD620
BUD87
MMBT6427
MMBTA13
MMBTA14
MMBTA63
MMBTA64
TD13002
TD13003
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MMBT6426
Abstract: MMBTA12 MMBTA13 MMBTA14
Text: This Surface Mount Transistors NATL Darlington Transistors— NPN VCEO V EBO V Min (V) Min MMBT6426 TO-236 (49) 40 40 MMBTA12 Its TO-236 (49) MMBTA13 MMBTA14 •c e s * ■CBO @ VCB @ hpE (j*A) Max (V) Min 12 0.05 30 20.000 30.000 20.000 20 10 0.1 15 TO-236
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003713S
T-31-0Ã
O-236
MMBT6426
MMBTA12
MMBTA13
MMBTA14
C003713S
MMBTA14
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Darlington pair IC schematic
Abstract: Darlington pair IC high current TTL IC PARAMETER ULQ2803A high current Darlington pair IC ULQ2801A DIP18 ULQ2802A ULQ2804A ULQ2805A
Text: ULQ2801A ULQ2802A - ULQ2803A ULQ2804A - ULQ2805A EIGHT DARLINGTON ARRAYS . . . . EIGHT DARLINGTONS PER PACKAGE EXTENDED TEMPERATURE RANGE – 40 to 105°C OUTPUT CURRENT TO 500mA OUTPUT VOLTAGE TO 50V INTEGRAL SUPPRESSION DIODES VERSIONS FOR ALL POPULAR LOGIC FAMILIES
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ULQ2801A
ULQ2802A
ULQ2803A
ULQ2804A
ULQ2805A
500mA
DIP18
ULQ2801A-ULQ2805A
600mA
500mA
Darlington pair IC schematic
Darlington pair IC high current
TTL IC PARAMETER
ULQ2803A
high current Darlington pair IC
ULQ2801A
DIP18
ULQ2805A
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D72K3D1
Abstract: D73K3D1 TL235
Text: SURFACE-MOUNT D72K3D1.2 NPN POWER DARLINGTON TRANSISTORS 40 VOLTS 3 AMP, 15 WATTS Designed for switching applications, hammer drive, pulse motor drive applications, power amplifier applications. Features: • High DC Current Gain : h F E 1 = 2000(Min.)
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D72K3D1
D73K3D1
TL235
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bcv47 npn darlington
Abstract: Diodes BCV47 BCV47 BCV27
Text: BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol BCV27 BCV47 BCV27 BCV47 Collector Base Voltage Collector Emitter Voltage Value 40 80 30 60 VCBO VCEO
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BCV27
BCV47
OT-23
BCV27
bcv47 npn darlington
Diodes BCV47
BCV47
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2N6426
Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage
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2N6426,
2N6427
2N6426
2N6426/D
2N6427
2N6426G
2N6426RLRAG
2N6427G
2N6427RLRAG
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PDF
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous
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MMBT6427LT1
236AB)
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PDF
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darlington transistor MPSW45
Abstract: MPSW45AG MPSW45 MPSW45A MPSW45ARLRA MPSW45ARLRAG MPSW45AZL1 MPSW45AZL1G MPSW45G
Text: MPSW45, MPSW45A One Watt Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW45 MPSW45A VCES 40 50 Vdc Collector −Base Voltage
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MPSW45,
MPSW45A
MPSW45
MPSW45/D
darlington transistor MPSW45
MPSW45AG
MPSW45
MPSW45A
MPSW45ARLRA
MPSW45ARLRAG
MPSW45AZL1
MPSW45AZL1G
MPSW45G
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PDF
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Hitachi DSA002755
Abstract: No abstract text available
Text: 2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC3957 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO
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2SC3957
Hitachi DSA002755
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BCV28
Abstract: BCV29
Text: SOT89 PNP SILICON DARLINGTON TRANSISTOR BCV28 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV29 PARTMARKING DETAIL – ED C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage
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BCV28
BCV29
-100mA,
-10mA,
-50mA,
20MHz
BCV28
BCV29
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PDF
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC3957 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO
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2SC3957
Hitachi DSA00279
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BC517 data sheet
Abstract: transistor BC517 BC517
Text: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage
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BC517
BC517 data sheet
transistor BC517
BC517
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2sc1472
Abstract: Hitachi DSA002754
Text: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage
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2SC1472
2SC1472
Hitachi DSA002754
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transistor c 6073
Abstract: PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073
Text: NPN Silicon Power Darlington Power Diode Module 40 Amperes • 400 Volts FEATURES • • • • • High Voltage Rating — 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability Discrete Diode Connected
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I-----1-7-10%
transistor c 6073
PTC6072
c 6073
PTC6073
TF PTC
6073
Darlington NPN Silicon Diode
"Power Diode"
Darlington 40A
ic c 6073
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PDF
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