Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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OCR Scan
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100/TIP
TIP105/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
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PDF
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sgs110
Abstract: SGS116
Text: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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OCR Scan
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TIP/SGS110-111-112
TIP/SGS115-116-117
TIP110,
TIP111,
TIP112
SGS110,
SGS111,
SQS112
O-220
OT-82
sgs110
SGS116
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PDF
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SGS136
Abstract: sgs131
Text: 7^S^S37 0 Ü2 * 27 S 4 • H ” 7 3 » V 2 -° \ SCS-THOMSON TIP/SGS130-131-132 ilLiûïM«! TIP/SGS135-136-137 S G S-THOMSON 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP130, TIP131, TIP132 and SGS130, SGS131, SQS132 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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OCR Scan
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TIP/SGS130-131-132
TIP/SGS135-136-137
TIP130,
TIP131,
TIP132
SGS130,
SGS131,
SQS132
O-220
OT-82
SGS136
sgs131
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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OCR Scan
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TIP100/101/102
TIP101
TIP102
TIP100
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PDF
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TIP100
Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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OCR Scan
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TIP100/101
TIP105/106/107
O-220
TIP100
TIP101
TIP102
900MA
TIP101
TIP102
NPN Transistor 8A
TIP102 Darlington transistor
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PDF
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tip 102
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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OCR Scan
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TIP100/101/102
O-220
TIP105/106/107
TIP101
tip 102
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PDF
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tip 102
Abstract: e 616 tip 226 darlington npn tip 102 E616 TIP101 darlington tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRAN SISTO R T IPI 00/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ V c e = 4 V , lc=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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OCR Scan
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TIP105/106/107
TIP100
TIP101
TIP102
tip 102
e 616
tip 226
darlington npn tip 102
E616
TIP101
darlington tip 102
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PDF
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TIP 102 transistor
Abstract: transistor tip 107 Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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OCR Scan
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TIP100/101/102
TIP105/106/107
TIP101
TIP 102 transistor
transistor tip 107
Transistor tip 102
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PDF
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tip 102
Abstract: Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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OCR Scan
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TIP100/101/102
TIP105/106/107
TIP101
TIP101
tip 102
Transistor tip 102
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PDF
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TIP105
Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102
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OCR Scan
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
TIP-106
TIP107
TIP106
transistor TIP105
NPN Transistor VCEO 80V 100V DARLINGTON
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PDF
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Tip 106
Abstract: TIP106
Text: SGS-THOMSON TIP100/TIP102 illSBTMIKgS TIPI 05/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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OCR Scan
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TIP100/TIP102
05/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
Tip 106
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PDF
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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OCR Scan
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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PDF
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Untitled
Abstract: No abstract text available
Text: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit
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OCR Scan
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TIP100/101/102
TIP105/106/107
TIP100,
TIP101
TIP102
O-220
TIP105,
TIP106
TIP107
100-T
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102
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OCR Scan
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TIP105/106/107
TIP106
TIP107
TIP105
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PDF
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|
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IVD12
Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
Text: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES
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OCR Scan
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M5A4709
150KH
2SB1061
2SD1502
PABX-MSA4709
IVD12
IVD10
4709 bt
bt 4709
hitachi slic application note
48V 2w zener diode
SCR SN 100
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PDF
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T1P126
Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp
Text: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage
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OCR Scan
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TIP120
TIP125
O-220
T1P126
transistor g35
B250H
TIPI20
transistor darlington TIP-120
TIP120
TIP125
TB-127
tip120 pnp
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PDF
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OCR Scan
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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PDF
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Untitled
Abstract: No abstract text available
Text: T IP 1 1 0 TIP111 T IP 1 1 2 _ J V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. P-N-P complements are
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OCR Scan
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TIP111
O-220AB
TIP115,
11in-----
11m-----â
111UJ,
bbS3T31
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PDF
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P112
Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are
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OCR Scan
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TIP110
TIP111
711002b
T-33-Z
T0-220AB
TIP115,
TIP116
TIP111
TIP112
P112
darlington npn tip 102
TIP112
TIP115
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PDF
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T1P42C
Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Text: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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TIP42
TIP42/42A/42B/42C)
T1P41/41AV41B/41C
T1P42
TIP42A
T1P42B
TIP42C
T1P42A
TIP42B
T1P42C
Power transistor TO-220 NPN 100 V, TIP 41C
TIP 41c transistor
T1P42A
TIP 42c transistor
T1P-42C
T1P49
t1p41
tlp42c
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PDF
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SGS115
Abstract: sgs110 SGS111 SGS112
Text: £ Z 7 S G S -T H O M S O N T IP /S G S I10- 111-112 ^ 7 # MOœLiOTOMDOi T IP /S G S 1 15-116-117 POWER DARLINGTONS D E S C R IP T IO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SGS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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OCR Scan
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TIP110,
TIP111,
TIP112
SGS110,
SGS111,
SGS112
OT-82
SGS115
sgs110
SGS111
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PDF
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darlington npn tip 102
Abstract: No abstract text available
Text: T IP I00, TIP101, TIP102 F ile N u m b e r 1153 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 60, 80, and 100 Volts, 80 Watts Gain of 1000 at 3 A Features: o • Operates from 1C without predriver ■ Low leakage at high temperature tr
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OCR Scan
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TIP101,
TIP102
O-220AB
TIP100,
TIP101
TIP102
darlington npn tip 102
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PDF
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p100 220a
Abstract: transistor p105 TP106 TP-107
Text: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors NPN T P100 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T P101* High DC Current Gain —
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OCR Scan
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TIP100/D
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
-220A
21A-06
O-220AB
p100 220a
transistor p105
TP106
TP-107
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PDF
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TIP418
Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A
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OCR Scan
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ST13005
ST13007
STD909T4
TIP42B
TIP42C
TIP47
TIP48
TIP49
TIP50
TIP100
TIP418
T1P31C
T1P32C
tip120 to-220 npn darlington
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PDF
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