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    DARLINGTON TRANSISTOR TO251 Search Results

    DARLINGTON TRANSISTOR TO251 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR TO251 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original     		PDF KSB907 KSD1222 O-251

    transistor c1510

    Abstract: C652I3 BTC1510I3 C1510
    Text: CYStech Electronics Corp. Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510I3 Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.


    Original     		PDF C652I3 BTC1510I3 BTC1510I3 O-251 R2120 UL94V-0 transistor c1510 C652I3 C1510

    transistor c1510

    Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
    Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		PDF BTC1510I3 C652I3 BTC1510I3 O-251 R2120 UL94V-0 transistor c1510 c1510 transistor c1510 C-1510 C652I3

    MID117

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R MID117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.


    Original     		PDF MID117 O-251 -80mA -40mA MID117

    power transistor Ic 4A NPN to - 251

    Abstract: MID112 VCEO100
    Text: DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.


    Original     		PDF MID112 O-251 power transistor Ic 4A NPN to - 251 MID112 VCEO100

    power transistor Ic 4A NPN to - 251

    Abstract: MID122
    Text: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector


    Original     		PDF MID122 O-251 power transistor Ic 4A NPN to - 251 MID122

    Darlington Transistor TO251

    Abstract: MJD112
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER


    Original     		PDF O-251/TO-252-2 O-251 O-252-2 MJD112 500mA Darlington Transistor TO251 MJD112

    Untitled

    Abstract: No abstract text available
    Text: KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain


    Original     		PDF KSH122 KSH122I TIP122 KSH127

    marking code k1

    Abstract: marking A1 TRANSISTOR HI127
    Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic


    Original     		PDF HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-251 O-251 MJD112 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-251-3L O-251-3L MJD112

    Darlington Transistor TO251

    Abstract: to-252-2
    Text: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value


    Original     		PDF MJD112 O-251/TO-525-2L O-251 O-252-2L 500mA Darlington Transistor TO251 to-252-2

    Untitled

    Abstract: No abstract text available
    Text: KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original     		PDF KSD1222 KSB907 O-251

    MJD122

    Abstract: JESD97 MJD122-1 MJD122T4 MJD127
    Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)


    Original     		PDF MJD122 O-251 O-252 MJD127. MJD122T4also MJD122 JESD97 MJD122-1 MJD122T4 MJD127

    HP122

    Abstract: DARLINGTON 3A 100V npn transistor Ic3A NPN
    Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）


    Original     		PDF HP122U O-251 HP122 DARLINGTON 3A 100V npn transistor Ic3A NPN

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


    Original     		PDF G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272

    diode 0336 A

    Abstract: No abstract text available
    Text: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112


    Original     		PDF KSH112 TIP112 TIP112 KSH112ITU O-251 diode 0336 A

    Untitled

    Abstract: No abstract text available
    Text: KSH127 KSH127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127


    Original     		PDF KSH127 TIP127 KSH122 KSH122 KSH127ITU O-251

    tip122 D-PAK package

    Abstract: equivalent of TIP122
    Text: KSH122 KSH122 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP122


    Original     		PDF KSH122 TIP122 KSH127 TIP117 KSH127 KSH122ITU O-251 tip122 D-PAK package equivalent of TIP122

    Untitled

    Abstract: No abstract text available
    Text: KSH117 KSH117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117


    Original     		PDF KSH117 TIP117 TIP117 KSH117ITU O-251 /imaging/BITTING/cpl/20020725 10/FAIR/07252002/KSH117I Jul-26-2002

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    TG-600PH-WH

    Abstract: smd transistor BC1
    Text: UM10510 120 V AC 17 W dimmable demo board using the SSL2103 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demo board for evaluating an AC mains


    Original     		PDF UM10510 SSL2103 SSL2103, PAR38 SSL2103. TG-600PH-WH smd transistor BC1

    Untitled

    Abstract: No abstract text available
    Text: UM10509 230 V AC 17 W dimmable demo board using the SSL2103 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demo board for evaluating an AC mains


    Original     		PDF UM10509 SSL2103 SSL2103, PAR38 SSL2103.