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    DATE CODE MARKING STMICROELECTRONICS D PAK Search Results

    DATE CODE MARKING STMICROELECTRONICS D PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    DATE CODE MARKING STMICROELECTRONICS D PAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics DPAK Marking CODE

    Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/391 Products in DPAK, PPAK, D2PAK, P2PAK packages:Lead free component connections 2003/12/11 PCN DSG-COM/03/391 Product Family /Commercial Product DPAK,PPAK,P2PAK,D2PAK for V.R. devices Type Of Change Package assembly process change


    Original     		PDF DSG-COM/03/391 STMicroelectronics DPAK Marking CODE STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT

    STTH5R06B

    Abstract: STTH5R06GY 17655
    Text: STTH5R06-Y Automotive Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Reduces switching losses ■ Low thermal resistance ■ AEC-Q101 qualified K K A A NC NC 2 D PAK STTH5R06G-Y DPAK STTH5R06B-Y


    Original     		PDF STTH5R06-Y AEC-Q101 STTH5R06B-Y STTH5R06G-Y STTH5R06, STTH5R06B STTH5R06GY 17655

    Untitled

    Abstract: No abstract text available
    Text: 2STBN15D100 Low voltage NPN power Darlington transistor Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application ■ 3 1 Linear and switching industrial equipment


    Original     		PDF 2STBN15D100 BN15D100

    st marking code

    Abstract: No abstract text available
    Text: 2STBN15D100 Low voltage NPN power Darlington transistor Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application ■ 3 1 Linear and switching industrial equipment


    Original     		PDF 2STBN15D100 2STBN15D100T4 BN15D100 st marking code

    Untitled

    Abstract: No abstract text available
    Text: STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH360N4F6-2 40 V < 1.25 mΩ 180 A(1) TAB 1. Current limited by package • 2 Low gate charge


    Original     		PDF STH360N4F6-2 STH360N4F6-2 360N4F6

    ISD25

    Abstract: STB18NF30
    Text: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK


    Original     		PDF STB18NF30 ISD25 STB18NF30

    STI300N4F6

    Abstract: No abstract text available
    Text: STI300N4F6 N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max. ID STI300N4F6 40 V 2.0 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th) ■ 175 °C junction temperature


    Original     		PDF STI300N4F6 AM01474v1 STI300N4F6

    Untitled

    Abstract: No abstract text available
    Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STH260N6F6-2 260N6F6

    Untitled

    Abstract: No abstract text available
    Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness TAB 2 3


    Original     		PDF STH260N6F6-2 260N6F6

    w25nm60n

    Abstract: f25nm60n P25NM60N P25NM60 STF25NM60N STB25NM60N-1 STB25NM60NT4 STP25NM60N STW25NM60N B25NM60N
    Text: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 650 @Tjmax-0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N


    Original     		PDF STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N 40-20A O-220/FP/D PAK/TO-247 STB25NM60N-1 STP25NM60N w25nm60n f25nm60n P25NM60N P25NM60 STF25NM60N STB25NM60N-1 STB25NM60NT4 STW25NM60N B25NM60N

    P25NM60N

    Abstract: w25nm60n f25nm60n F25NM60 P25NM60 W25NM ef 933 STB25NM60N STB25NM60N-1 STF25NM60N
    Text: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N


    Original     		PDF STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N 40-20A O-220/FP/D PAK/TO-247 STB25NM60N-1 STP25NM60N P25NM60N w25nm60n f25nm60n F25NM60 P25NM60 W25NM ef 933 STB25NM60N STB25NM60N-1 STF25NM60N

    300NH02L

    Abstract: No abstract text available
    Text: STH300NH02L-6 N-channel 24 V, 0.95 mΩ, 180 A, H²PAK-6 STripFET Power MOSFET Features Order code VDSS RDS on max. ID (1) STH300NH02L-6 24 V < 1.2 mΩ 180 A TAB 1. Current limited by package 6 • Conduction losses reduced ■ Low profile, very low parasitic inductance, high


    Original     		PDF STH300NH02L-6 STH300NH02L-6 300NH02L

    STH240N75F3-6

    Abstract: No abstract text available
    Text: STH240N75F3-6 N-channel 75 V, 2.6 mΩ, 180 A, H²PAK STripFET III Power MOSFET Features Order code VDSS RDS on max. ID STH240N75F3-6 75 V < 3.0 mΩ 180 A • Conduction losses reduced ■ Low profile, very low parasitic inductance 7 1 Applications ■


    Original     		PDF STH240N75F3-6 240N75F3 1/14in STH240N75F3-6

    STPS40120CR

    Abstract: JESD97 STPS40120C STPS40120CT
    Text: STPS40120C Power Schottky rectifier Main product characteristics IF AV A1 2 x 20 A VRRM 120 V Tj(max) 175° C VF(typ) 0.57 V K A2 K K Feature and benefits • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and


    Original     		PDF STPS40120C O-220AB STPS40120CT STPS40120CR O-220AB STPS40120CR JESD97 STPS40120C STPS40120CT

    w25nm60n

    Abstract: P25NM60N f25nm60n B25NM60N w25nm60 ST T4 0560 Marking STMicroelectronics to220
    Text: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N


    Original     		PDF 40-20A O-220/FP/D PAK/TO-247 STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N STB25NM60NT4 w25nm60n P25NM60N f25nm60n B25NM60N w25nm60 ST T4 0560 Marking STMicroelectronics to220

    B80NF55-06

    Abstract: No abstract text available
    Text: STB80NF55-06T N-channel 55 V, 5 mΩ, 80 A STripFET II Power MOSFET in a D²PAK package Features Order code VDSS RDS on max. ID STB80NF55-06T 55 V < 6.5 mΩ 80A TAB • Exceptional dv/dt capability Applications ■ Switching application ■ Automotive 3


    Original     		PDF STB80NF55-06T B80NF55-06

    10428

    Abstract: STB45NF06 mosfet DPAK
    Text: STB45NF06 N-channel 60 V, 0.22 Ω typ., 38 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code STB45NF06T4 • VDS RDS on max ID 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability


    Original     		PDF STB45NF06 STB45NF06T4 10428 STB45NF06 mosfet DPAK

    AM-145

    Abstract: STH400N4F6-2 STH400
    Text: STH400N4F6-2, STH400N4F6-6 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − preliminary data Features Order code STH400N4F6-2 STH400N4F6-6 VDSS RDS on max ID 40 V < 1.15 mΩ 180 A(1) TAB TAB 2


    Original     		PDF STH400N4F6-2, STH400N4F6-6 STH400N4F6-2 AM-145 STH400

    B170NF04

    Abstract: STB170NF04
    Text: STB170NF04 N-channel 40 V, 4.4 mΩ typ., 80 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code VDSS @TJ max. RDS on max. ID PTOT STB170NF04 40 V < 5 mΩ 80 A 300 W • TAB Standard threshold drive 3 Applications


    Original     		PDF STB170NF04 B170NF04 STB170NF04

    13NK60Z

    Abstract: 13nk60 STFI13NK60Z
    Text: STFI13NK60Z N-channel 600 V, 0.48 Ω, 13 A, I2PakFP Zener-protected SuperMESH Power MOSFET Preliminary data Features Order code STFI13NK60Z VDSS RDS on max 600 V <0.55 Ω ID PTOT 13 A TBD • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original     		PDF STFI13NK60Z 13NK60Z 13nk60 STFI13NK60Z

    Gf7NC60HD

    Abstract: STMicroelectronics date marking on D 2pak STGF7NC60HD
    Text: STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V < 2.5 V < 2.5 V


    Original     		PDF STGF7NC60HD STGB7NC60HD O-220FP/D O-220FP O-220FP: Gf7NC60HD STMicroelectronics date marking on D 2pak

    210N75F6

    Abstract: No abstract text available
    Text: STH210N75F6-2 N-channel 75 V, 0.0022 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH210N75F6-2 75 V < 0.0028 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STH210N75F6-2 210N75F6

    B230NH03L

    Abstract: 3M Philippines
    Text: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced


    Original     		PDF STB230NH03L B230NH03L 3M Philippines

    Untitled

    Abstract: No abstract text available
    Text: STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in a H²PAK-6 package Datasheet - production data Features Order code VDS RDS on max. ID STH245N75F3-6 75 V 3.0 Ω 180 A TAB • Designed for automotive applications and


    Original     		PDF STH245N75F3-6 AEC-Q101 DocID026268