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Abstract: No abstract text available
Text: DB2S314 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB2J314 in SSMini2 type package • Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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DB2S314
DB2J314
UL-94
DB2S31400L
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Untitled
Abstract: No abstract text available
Text: DB27314 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB2S314 in SSSMini2 type package • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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DB27314
DB2S314
UL-94
DB2731400L
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2S314 (Tentative) Silicon epitaxial planar type For high speed switching circuits • Package Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V VRM 30 V IF 30 mA Peak forward current
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2002/95/EC)
DB2S314
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DB27314
Abstract: DB2S314 ZKH00294AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB27314 Silicon epitaxial planar type For high speed switching circuits DB2S314 in SSSMini2 type package • Features Package Short reverse recovery time trr Small reverse current IR
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2002/95/EC)
DB27314
DB2S314
12asures
DB27314
ZKH00294AED
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DB2S314
Abstract: diode n10 n10 diode 00E-6 DB2S31 m032
Text: DB2S314 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB2S314 Product type: Schottky Barrier Diode Parameters *DEVICE=DB2S314,D * DB2S314 D model *$ .MODEL DB2S314 D + IS=27.831E-9 + N=1.0 + RS=9.2 + IKF=0.05 + CJO=3.814E-12 + M=0.32
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DB2S314
DB2S314
831E-9
814E-12
820E-9
00E-6
diode n10
n10 diode
00E-6
DB2S31
m032
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2S314 Silicon epitaxial planar type For high speed switching circuits DB2J314 in SSMini2 type package • Features Package Short reverse recovery time trr Small reverse current IR
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2002/95/EC)
DB2S314
DB2J314
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DB2S314
Abstract: SSMini2-F5-B DB2J314 DB2S31
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2S314 Silicon epitaxial planar type For high speed switching circuits DB2J314 in SSMini2 type package • Features Package Short reverse recovery time trr Small reverse current IR
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Original
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2002/95/EC)
DB2S314
DB2J314
DB2S314
SSMini2-F5-B
DB2S31
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.
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A000021E
MN864779
MN88472
AN12947a
MN6627553
MIP3E3SMY
AN22004A
mip2E2dmy
MIP2F2* replacement
MIP2E7DMY
MIP3E50MY
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