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    DD30M Price and Stock

    SEI Stackpole Electronics Inc HVCB2512FDD30M0

    RES 30M OHM 1% 2W 2512
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    DigiKey HVCB2512FDD30M0 Digi-Reel 213 1
    • 1 $7.85
    • 10 $5.216
    • 100 $3.8981
    • 1000 $3.8981
    • 10000 $3.8981
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    HVCB2512FDD30M0 Cut Tape 213 1
    • 1 $7.85
    • 10 $5.216
    • 100 $3.8981
    • 1000 $3.8981
    • 10000 $3.8981
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    HVCB2512FDD30M0 Reel 500
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    • 1000 $3.22918
    • 10000 $3.125
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    Avnet Americas HVCB2512FDD30M0 Reel 13 Weeks 500
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    • 1000 $4.071
    • 10000 $3.894
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    Mouser Electronics HVCB2512FDD30M0
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    NAC HVCB2512FDD30M0 7,000 1
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    • 1000 $9.833
    • 10000 $8.429
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    PUI HVCB2512FDD30M0 7,000 11 Weeks 500
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    Master Electronics HVCB2512FDD30M0
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    • 1000 $3.782
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    SEI Stackpole Electronics Inc HVCB1206FDD30M0

    RES 30M OHM 1% 1/3W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HVCB1206FDD30M0 Reel 500
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    • 1000 $2.67246
    • 10000 $2.67246
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    HVCB1206FDD30M0 Digi-Reel 1
    • 1 $6.51
    • 10 $6.51
    • 100 $6.51
    • 1000 $6.51
    • 10000 $6.51
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    HVCB1206FDD30M0 Cut Tape 1
    • 1 $6.51
    • 10 $6.51
    • 100 $6.51
    • 1000 $6.51
    • 10000 $6.51
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    Avnet Americas HVCB1206FDD30M0 Reel 13 Weeks 500
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    Mouser Electronics HVCB1206FDD30M0
    • 1 -
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    • 1000 $2.64
    • 10000 $2.64
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    NAC HVCB1206FDD30M0 500
    • 1 -
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    • 1000 $7
    • 10000 $6
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    DD30M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    bbS3S31 DD30Mfl0 BUK437-400B gat20 bb53T31 DQ30Mfl3 PDF

    BUK438-500B

    Abstract: No abstract text available
    Text: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3R31 BUK438-500B bbS3T31 DD30M BUK438-500B PDF