Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
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fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
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mc 79L
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N S E SDM862 SDM863 SDM872 SDM873 1 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • POWER PLANT MONITORING • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE
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SDM862
SDM863
SDM872
SDM873
12-BIT
45kHz
33kHz
67kHz
mc 79L
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10D41
Abstract: CMC 339 TT 2222 cross reference 2222 philips 0805 ceramic Philips npo 0805 AgPd resistor
Text: Philips Components Product specification Surface mounted ceramic multilayer capacitors FEATURES f t o Class 1, NPO series QUICK REFERENCE DATA • Six standard sizes DESCRIPTION • High capacitance per unit volume Rated voltage Ur DC • Supplied in tape on reel or in bulk
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DD31b3
10D41
CMC 339
TT 2222 cross reference
2222 philips 0805 ceramic
Philips npo 0805
AgPd resistor
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b1l3
Abstract: CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133
Text: ^ _ 5r^ C Y P R F .S S CY7C1361V25 CY7C1363V25 CY7C1365V25 PBEUm m m 256K x36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32/512K x 18 common I/O » Fast clock-to-output times — 7.5 ns lor 117-MHz device
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CY7C1361V25
CY7C1363V25
CY7C1365V25
36/256K
32/512K
113-MHz
117-MHz
100-MHz
80-MHz
100-pin
b1l3
CV7C136
CY7C1361V25
CY7C1363V25
CY7C1365V25
7C1361-133
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800T
Abstract: No abstract text available
Text: 30E » • 715^37 0D31b3D » ■ £ ÿ j SGS-THOMSON HOMSON UHCTB BJ®8 S - p 2 -S -IS BTA/BTB 06 T G S - THOMSON SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Ig t SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES INSULATING VOLTAGE
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0D31b3D
E81734)
0031b33
800T
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T-25-TS
Abstract: No abstract text available
Text: 3GE D r Z 7 • 7 ^ 2 3 7 G 031b34 S ■ S G S -T H O M S O N « « L tE O T T ltM O S B T A / B T B 0 6 T W S 6 S-TH0MS0N LOGIC LEVEL TRIACS ■ It r m s DESC RIPTIO N = 6 A at Tc = 80 °C. ■ V drm : 200 V to 800 V. New range suited for applications such as phase
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031b34
E81734)
7T2TE37
0031b3fi
CB-415)
T-25-TS
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Untitled
Abstract: No abstract text available
Text: HB56G164EJ Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-698A Z Rev. 1.0 Dec. 27, 1996 Description The HB56G164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56G164EJ
576-word
64-bit
ADE-203-698A
16-Mbit
HM5118160)
16-bit
74ABT16244)
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BTA SERIES
Abstract: T2515
Text: 3ÜE D r z 7 • 7^5^237 0Q31ÈJ34 5 ■ S G S - T H O M S O N l» ^ » [E (g irB « S "'P2SMS B T A /B T B 06 T W S G S-TH0MS0N LOGIC LEVEL TRIACS ■ ■ ■ ■ ■ ■ ■ ■ ■ It r m s = 6 A at Tc = 80 °c. Vdrm : 200 V to 800 V. Igt = 5 mA (Ql-ll-lll .
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7T5T237
E81734)
CB-415
0031b36
T-25-1
CB-415)
BTA SERIES
T2515
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