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    10C1

    Abstract: 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn
    Text: • f *< UK DISCRETE SEMICONDUCTORS M m S^ EETT LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS Preliminary «pacification Philip» Semiconductora


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    PDF LLE18300X DD3f033 10C1 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn