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    Text: rz7 SGS-ni0MS0N ^ 7# M » [IL IO T M I]e S T B 6 NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB6NA80 V dss RDS on Id 800 V < 1.9 Q 5.7 A TYPICAL R d s (o ii) = 1-68 Q , ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STB6NA80 O-262) O-263) 07233S O-263 DD72340 PDF