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    Text: 2MI50S-050 SIPMOS FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET MOS-FET MODULE • Features lOutline Drawings • Low on-resistance • High current 2-< 5.8 • Insulated to elements and metal base • Separated tw o-elem ents ■A pplications • High frequency power supplies


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    PDF 2MI50S-050 DDD3177 I50S-050 A2-322