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    Text: FU JI 2SK2765-01 S iL tìls u U tìU K FAP-IIS Series N-channel MOS-FET > Features - 20, 800V 7A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated


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    PDF 2SK2765-01 DDD4717