DDR200
Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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IBMN612404GT3B
IBMN612804GT3B
128Mb
DDR266A
DDR266B
DDR200
06K0566
F39350B
DDR200
DDR266A
DDR266B
IBMN612404GT3B
IBMN612804GT3B
IBMN62540
IBMN62580
128MB PC266
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DDR200
Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).
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IBMN625404GT3B
IBMN625804GT3B
256Mb
DDR266A
DDR266B
DDR200
29L0011
E36997B
DDR200
DDR266A
DDR266B
IBMN62540
IBMN625404GT3B
IBMN62580
IBMN625804GT3B
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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200PIN
DDR266
128MB
16Mx16
TS16MSD64V6G
TS16MSD64V6G
64bits
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DDR200
Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted
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HYB25D256400/800AT
256-MBit
DDR266A
DDR200
DDR200
DDR266A
HYB25D256400AT-7
HYB25D256400AT-8
HYB25D256800AT-7
HYB25D256800AT-8
TSOP66
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64MX64
Abstract: DDR266 DDR333 DDR400B PC2100 PC2700 PC3200
Text: P64M648HHJ - 512MB, P64M648IGJ-512MB, P128M6416HHJ –1GB SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR
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P64M648HHJ
512MB,
P64M648IGJ-512MB,
P128M6416HHJ
PC2100,
PC2700,
PC3200
DDR266,
DDR333
DDR400B
64MX64
DDR266
PC2100
PC2700
PC3200
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Untitled
Abstract: No abstract text available
Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)
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V58C2512
16Mbit
32Mbit
DDR500
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)
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V58C2256
16Mbit
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)
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V58C2128
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns
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V58C2256
16Mbit
DDR500
DDR440
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5D 5B 5 6 7 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5 ns 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5)
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V58C2256
16Mbit
DDR400
DDR333
DDR266
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BA 5053
Abstract: No abstract text available
Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)
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V58C2256
16Mbit
DDR500
DDR440
DDR400
DDR333
DDR266
BA 5053
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V58C2512
Abstract: No abstract text available
Text: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)
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V58C2512
16Mbit
32Mbit
DDR500
DDR400
DDR333
DDR266
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VDDSPD
Abstract: IC PIN CONFIGURATION OF 74 47
Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability
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SL72E5M256M8M-B75EW
184-Pin
PC2100)
PC2100
DDR266B
133MHz--7
cycles/64ms
JEP-106E
VDDSPD
IC PIN CONFIGURATION OF 74 47
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100-pin dimm
Abstract: SU5326485D8F0CU
Text: SU5326485D8F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5326485D8F0CG 64Mx32 256MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5326485D8F0CG 64Mx32 (256MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,
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SU5326485D8F0CU
SM5326485D8F0CG
SB5326485D8F0CG
64Mx32
256MB)
100-pin
64Mx8
DDR266A,
100-pin dimm
SU5326485D8F0CU
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Untitled
Abstract: No abstract text available
Text: SU5722885D8DRCU02 October 1, 2004 Ordering Information Part Numbers Description Module Speed SM5722885D8DRCG02 128Mx72 1GB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, ECC, 128Mx8 Based (Stacked - two 64Mx8), DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5
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SU5722885D8DRCU02
SM5722885D8DRCG02
128Mx72
200-pin
128Mx8
64Mx8)
DDR266A,
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1376408-1
Abstract: No abstract text available
Text: SU5646485D8NRCU01 September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NRCG01 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, Non-ECC, 64Mx8 Based (Stacked - two 32Mx8), DDR266A, 35.56mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5
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SU5646485D8NRCU01
SM5646485D8NRCG01
64Mx64
512MB)
200-pin
64Mx8
32Mx8)
DDR266A,
32Mx64
256MB)
1376408-1
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G5723
Abstract: No abstract text available
Text: SU5726485D8D6CU July 19, 2006 Ordering Information Part Numbers Description Module Speed SM5726485D8D6CG 64Mx72 512MB , DDR, 184-pin DIMM, Unbuffered, ECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5726485D8D6CG 64Mx72 (512MB), DDR, 184-pin DIMM, Unbuffered, ECC,
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SU5726485D8D6CU
SM5726485D8D6CG
SG5726485D8D6CG
64Mx72
512MB)
184-pin
32Mx8
DDR266A,
G5723
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Untitled
Abstract: No abstract text available
Text: SU5726485D8DZCU02 October 5, 2004 Ordering Information Part Numbers Description Module Speed SM5726485D8DZCG02 64Mx72 512MB , DDR, 200-pin SODIMM, Unbuffered, PLL, 64Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5726485D8DZCG02
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SU5726485D8DZCU02
SM5726485D8DZCG02
SB5726485D8DZCG02
64Mx72
512MB)
200-pin
64Mx8
DDR266A,
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Untitled
Abstract: No abstract text available
Text: SU5725645DHE8CU02 November 9, 2004 Ordering Information Part Numbers Description Module Speed SM5725645DHE8CG02 256Mx72 2GB , DDR, 184-pin DIMM, Registered, 256Mx4 Based (Stacked - two 128Mx4), ECC, DDR266A, 30.48mm, 22Ω DQ termination, Low Power. PC2100 @ CL 2.0, 2.5
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SU5725645DHE8CU02
SM5725645DHE8CG02
256Mx72
184-pin
256Mx4
128Mx4)
DDR266A,
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Untitled
Abstract: No abstract text available
Text: SM6472RDDR301 September 30, 2005 Ordering Information Part Numbers Description Module Speed SM6472RDDR301 64Mx72 512MB , DDR, 184-pin DIMM, Registered, ECC, 32Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM6472RDDR301
SM6472RDDR301
64Mx72
512MB)
184-pin
32Mx8
DDR266A,
PC2100
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Untitled
Abstract: No abstract text available
Text: SU5721685D4D0CU July 6, 2006 Ordering Information Part Numbers Description Module Speed SM5721685D4D0CG 16Mx72 128MB , DDR, 184-pin DIMM, Unbuffered, ECC, 16Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5721685D4D0CG 16Mx72 (128MB), DDR, 184-pin DIMM, Unbuffered, ECC,
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SU5721685D4D0CU
SM5721685D4D0CG
SG5721685D4D0CG
16Mx72
128MB)
184-pin
16Mx8
DDR266A,
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG72255S-D3 -JD3 -AJD3 PRELIMINARY* 2GB-256Mx72 DDR SDRAM REGISTERED ECC FEATURES DESCRIPTION n Double-data-rate architecture n DDR200, DDR266 and DDR333; The W3EG72255S is a 256Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM
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W3EG72255S-D3
2GB-256Mx72
DDR200,
DDR266
DDR333;
W3EG72255S
256Mx72
512Mb
256Mx4
128Mx72
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256mb ddr333 200 pin
Abstract: DDR266 DDR333 WV3EG6434S-BD4
Text: White Electronic Designs WV3EG6434S-BD4 ADVANCED* 256MB – 32Mx64 DDR SDRAM UNBUFFERED, w/PLL FEATURES DESCRIPTION DDR266 and DDR333 The WV3EG6434S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight
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WV3EG6434S-BD4
256MB
32Mx64
DDR266
DDR333
WV3EG6434S
256Mb
32Mx8
256mb ddr333 200 pin
DDR333
WV3EG6434S-BD4
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NT256D64S8HA0G
Abstract: NT256D64S8HA0G-7K PC2100
Text: NT256D64S8HA0G 256MB : 32M x 64 PC2100 / PC1600 Unbuffered DIMM 184pin Two Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 16Mx8 SDRAM Features • 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module • DRAM DLL aligns DQ and DQS transitions with clock transitions.
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NT256D64S8HA0G
256MB
PC2100
PC1600
184pin
DDR266/200
16Mx8
184-Pin
32Mx64
PC1600
NT256D64S8HA0G
NT256D64S8HA0G-7K
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