Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

DDR2-667

Abstract: PC2-5300 SSTL-18
Contextual Info: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:

NT512T64U88A0BY-37B

Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
Contextual Info: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module

M378T2953CZ3

Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

DDR2-667

Abstract: SSTUA32864 SSTUA32866 SSTUA32S865 TFBGA160
Contextual Info: SSTUA32S865 1.8 V 28-bit 1 : 2 registered buffer with parity for DDR2-667 RDIMM applications Rev. 02 — 16 March 2007 Product data sheet 1. General description The SSTUA32S865 is a 1.8 V 28-bit 1 : 2 register specifically designed for use on two rank by four 2R x 4 and similar high-density Double Data Rate 2 (DDR2) memory

NT5TU128M8DE

Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6

nt5tu128m8de-ac

Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266

NT5TU32M16AG-37B

Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Contextual Info: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8

NT1GT64U8HA0BN

Abstract: NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 SSTL-18 NT1GT64U8HA0BN-37B
Contextual Info: NT1GT64U8HA0BN Green 1GB : 128M x 64 PC2-3200 / PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 64Mx8 DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2

NT5TU32M16CG-BD

Abstract: NT5TU32M16CG-be NT5TU64M8CE
Contextual Info: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4

K4T51043QB-GCCC

Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Contextual Info: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

W971GG6JB

Abstract: 8X12 DDR2-667 DDR2-800 0A80
Contextual Info: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 JM388Q643A-6 Placement Description The JM388Q643A-6 is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM388Q643A-6 consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: TS256MFB72V6U-T 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx8 CL5 Description calibration The TS256MFB72V6U-T is a 256M x 72bits DDR2-667 MBIST and IBIST Test functions Fully Buffered DIMM. The TS256MFB72V6U-T consists of Hot add-on and Hot Remove Capability

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 512MB With 64Mx8 CL5 JM667QLJ-512M Description Placement The JM667QLJ-512M is a 64M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 667 ECC Unbuffered DIMM 2GB With 128Mx8 CL5 TS256MLQ72V6U Description Placement The TS256MLQ72V6U is a 256M x 72bits DDR2-667 Unbuffered DIMM. The TS256MLQ72V6U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

Contextual Info: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of