Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin
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240PIN
64Mx8
TS128MLQ64V6J
TS128MLQ64V6J
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576Mb
10-20ns
18-72Mb
64Kb-16Mb
8Mb-64Mb
16Mb-512Mb
16Mb-1Gb
256Mb-2Gb
200Mhz
-40oC
Samsung EOL
IS42S81600F
is42s16320
IS43DR16320
IS42S32200L
IS49NLC36800
IS43R32400E
IS46R
Mobile SDRAM
IS42S32200E
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PDF
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Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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DDR2-667
Abstract: PC2-5300 SSTL-18
Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:
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NT256T64UH4A1FY
256MB:
240pin
32Mx16
240-pin
32Mx64
84-ball
DDR2-667
PC2-5300
SSTL-18
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NT512T64U88A0BY-37B
Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
Text: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module
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NT512T64U88A0F
NT512T64U88A0B
NT512T64U88A0BY
NT1GT64U8HA0F
NT1GT64U8HA0B
NT1GT64U8HA0BY
512MB:
240pin
64Mx8
240-pin
NT512T64U88A0BY-37B
NT512T64U88A0BY-5A
NT1GT64U8HA0BY-37B
PC2-3200
SSTL-18
4E543147543634553848413042592D35412020
NT512T64U88A
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M378T2953CZ3
Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB,
512MB,
240pin
512Mb
64/72-bit
32Mx64
M378T3354CZ3
M378T3354CZ0
K4T51163QC
M378T2953CZ3
1GB DDR2 4 banks
DDR2 SDRAM ECC
dm 533
M378T6553CZ0
K4T5108
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DDR2-667
Abstract: SSTUA32864 SSTUA32866 SSTUA32S865 TFBGA160
Text: SSTUA32S865 1.8 V 28-bit 1 : 2 registered buffer with parity for DDR2-667 RDIMM applications Rev. 02 — 16 March 2007 Product data sheet 1. General description The SSTUA32S865 is a 1.8 V 28-bit 1 : 2 register specifically designed for use on two rank by four 2R x 4 and similar high-density Double Data Rate 2 (DDR2) memory
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SSTUA32S865
28-bit
DDR2-667
SSTUA32S865
14-bit
DDR2-667
SSTUA32864
SSTUA32866
TFBGA160
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NT5TU128M8DE
Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6
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NT5TU256M4DE
NT5TU128M8DE
NT5TU64M16DG
NT5TB256M4DE
NT5TB128M8DE
NT5TB64M16DG
-37B/-37BI
DDR2-533
DDR2-667
DDR2-800
NT5TU64M16DG
nt5tu64m16dg-Bd
NT5TU128M8DE-BD
nt5tu64m
NT5TU64M16
NT5TU64M16DG-3C
NT5TU64M16DG-3CI
NT5TU64M16DG-BE
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nt5tu128m8de-ac
Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266
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NT5TU256M4DE
NT5TU128M8DE
NT5TU64M16DG
nt5tu128m8de-ac
NT5TU64M16DG-AD
NT5TU128M8DE-AD
NT5TU64M16DG
NT5TU64M16DG-3C
Nanya NT5TU64M16DG
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NT5TU32M16AG-37B
Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8
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NT5TU128M4AB/NT5TU128M4AE
NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE
NT5TU32M16AF/NT5TU32M16AG
/NT5TU32M16AS
512Mb
NT5TU32M16AG-37B
NT5TU128M4AE
nt5tu64m8
nt5tu64m
NT5TU32M16
NT5T
nt5tu32m16ag
nt5tu64m8af
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NT1GT64U8HA0BN
Abstract: NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 SSTL-18 NT1GT64U8HA0BN-37B
Text: NT1GT64U8HA0BN Green 1GB : 128M x 64 PC2-3200 / PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 64Mx8 DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2
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NT1GT64U8HA0BN
PC2-3200
PC2-4200
PC2-5300
64Mx8
200-Pin
128Mx64
PNT1GT64U8HA0BN
NT1GT64U8HA0BN
NT1GT64U8HA0BN-3C
DDR2-400
DDR2-533
DDR2-667
SSTL-18
NT1GT64U8HA0BN-37B
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NT5TU32M16CG-BD
Abstract: NT5TU32M16CG-be NT5TU64M8CE
Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4
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NT5TU128M4CE
NT5TU64M8CE
/NT5TU32M16CG
512Mb
NT5TU32M16CG-BD
NT5TU32M16CG-be
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K4T51043QB-GCCC
Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
K4T51043QB-GCCC
K4T51043QB-GCE6
K4T51043QB-GLE6
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BR17
Abstract: No abstract text available
Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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TMS320C6474
SPRS552H
TMS320C6474
C6474)
850-MHz
TMS320C64x+
16-/32-Bit
DDR2-667
BR17
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media
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TMS320DM365
SPRS457E
TMS320DM365
300-MHz
ARM926EJ-S
1/16x
16-Bit
8-/16-bit)
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7813 Texas Instruments Transistor
Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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TMS320C6474
SPRS552H
TMS320C6474
C6474)
850-MHz
TMS320C64x
16-/32-Bit
DDR2-667
7813 Texas Instruments Transistor
TMS320C6000
C6000
C6474
C64X
SPRS552H
BR17
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PDF
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W971GG6JB
Abstract: 8X12 DDR2-667 DDR2-800 0A80
Text: W971GG6JB 8M 8 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W971GG6JB
W971GG6JB
8X12
DDR2-667
DDR2-800
0A80
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support
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240PIN
64Mx8
TS128MFB72V6J-T
TS128MFB72V6J-T
72bits
DDR2-667
18pcs
64Mx8its
240-pin
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 JM388Q643A-6 Placement Description The JM388Q643A-6 is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM388Q643A-6 consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
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240PIN
64Mx8
JM388Q643A-6
JM388Q643A-6
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: TS256MFB72V6U-T 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx8 CL5 Description calibration The TS256MFB72V6U-T is a 256M x 72bits DDR2-667 MBIST and IBIST Test functions Fully Buffered DIMM. The TS256MFB72V6U-T consists of Hot add-on and Hot Remove Capability
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TS256MFB72V6U-T
240PIN
128Mx8
TS256MFB72V6U-T
72bits
DDR2-667
18pcs
128Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 512MB With 64Mx8 CL5 JM667QLJ-512M Description Placement The JM667QLJ-512M is a 64M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin
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240PIN
512MB
64Mx8
JM667QLJ-512M
JM667QLJ-512M
64bits
DDR2-667
64Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 ECC Unbuffered DIMM 2GB With 128Mx8 CL5 TS256MLQ72V6U Description Placement The TS256MLQ72V6U is a 256M x 72bits DDR2-667 Unbuffered DIMM. The TS256MLQ72V6U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit
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240PIN
128Mx8
TS256MLQ72V6U
TS256MLQ72V6U
72bits
DDR2-667
128Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of
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TS128MFB72V6J-T
240PIN
64Mx8
TS128MFB72V6J-T
72bits
DDR2-667
18pcs
64Mx8its
240-pin
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