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    DDR3 SDRAM CHIP 128MB Search Results

    DDR3 SDRAM CHIP 128MB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    DDR3 SDRAM CHIP 128MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD79-3D

    Abstract: No abstract text available
    Text: TM August 2013 • Introduction and Industry Trends • Memory Organization and Operation • Features and Capabilities • Demo − DDR configuration using QorIQ Configuration Suite − DDR validation using DDRv plug-in to QCS TM 2 TM • Many customers are deploying and expect DDR3 support on


    Original     		PDF

    K4B4G0846D

    Abstract: PC3-10600R-09-10-E1-D2 PC3-10600R-09-10-E1-P1 M393B1K70DH0 M471B5273DH0 k4b4g0446d M393B5270DH0 M471B5773DH0 M393B5273DH0-YH9 M393B5273DH0
    Text: Jul. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF

    FBGA DDR3 x32

    Abstract: GDDR3 SDRAM 256Mb 144FBGA 144-FBGA gddr3 DDR266 DDR2-667 DDR2-800 DDR3-1333 DDR333
    Text: Jun.2010 Consumer DRAM Code Information Component K4XXXXXXXX - XXXXXXX 1 2 1. Memory K 2. DRAM : 4 3. Small Classification S : SDRAM H : DDR SDRAM T : DDR2 SDRAM B : DDR3 SDRAM D : GDDR J : GDDR3 4~5. Density & Refresh 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms


    Original     		PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 667MHz DDR3-1600 FBGA DDR3 x32 GDDR3 SDRAM 256Mb 144FBGA 144-FBGA gddr3 DDR266 DDR2-667 DDR2-800 DDR3-1333 DDR333

    Untitled

    Abstract: No abstract text available
    Text: 1 CONTENTS Chapter 1 SoCKit Development Kit. . . 4 1.1 Package Contents. 4


    Original     		PDF

    IDSH51

    Abstract: No abstract text available
    Text: April 2008 IDSH51–02A1F1C IDSH51–03A1F1C IDSH51–04A1F1C 512-Mbit Double-Data-Rate-Three SDRAM DDR3 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.92 Advance Internet Data Sheet IDSH51–0[2/3/4]A1F1C 512-Mbit Double-Data-Rate-Three SDRAM


    Original     		PDF IDSH51 02A1F1C 03A1F1C 04A1F1C 512-Mbit mpth0535

    Untitled

    Abstract: No abstract text available
    Text: June 2008 IDSH1G–02A1F1C IDSH1G–03A1F1C IDSH1G–04A1F1C 1-Gbit Double-Data-Rate-Three SDRAM DDR3 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.63 Advance Internet Data Sheet IDSH1G–0[2/3/4]A1F1C 1-Gbit Double-Data-Rate-Three SDRAM


    Original     		PDF 02A1F1C 03A1F1C 04A1F1C DDR3-1066 2008ce.

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    CL-nRCD-nRP

    Abstract: No abstract text available
    Text: January 2008 IMSH4GP12A1F2C IMSH4GP23A1F2C IMSH8GP22A1F2C 240-Pin DDR3 Registered Modules with Parity bit 4 GByte and 8 GByte RoHS compliant Advance Internet Data Sheet Rev. 0.50 Advance Internet Data Sheet DDR3 Registered DIMM IMSH[4G/8G]PxxA1F2C IMSH4GP12A1F2C, IMSH4GP23A1F2C, IMSH8GP22A1F2C


    Original     		PDF IMSH4GP12A1F2C IMSH4GP23A1F2C IMSH8GP22A1F2C 240-Pin IMSH4GP12A1F2C, IMSH4GP23A1F2C, IMSH8GP22A1F2C 012ce. CL-nRCD-nRP

    IDSH1G-02A1F1C-13H

    Abstract: IDSH1G-04A1F1C-13G
    Text: April 2008 IDSH1G–02A1F1C IDSH1G–03A1F1C IDSH1G–04A1F1C 1-Gbit Double-Data-Rate-Three SDRAM DDR3 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.62 Advance Internet Data Sheet IDSH1G–0[2/3/4]A1F1C 1-Gbit Double-Data-Rate-Three SDRAM


    Original     		PDF 02A1F1C 03A1F1C 04A1F1C IDSH1G-03A1F1C-16H, IDSH1G-03A1F1C-16J, IDSH1G-03A1F1C-16K, IDSH1G03A1F1C-16G IDSH1G-02A1F1C-13H IDSH1G-04A1F1C-13G

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    NT5CB64M16FP

    Abstract: NT5CB64M16FP-DII NT5CB64M16FP-EK nt5cb64m16 NT5CC64M16FP NT5CC64M16FP-DI NT5CB64M16FP-DH NT5CB128M8FN NT5CC128M8FN NT5CC128M8FN-DI
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe Backward compatible to VDD= VDDQ= 1.5V  Write Leveling


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16 NT5CB64M16FP-DII NT5CB64M16FP-EK nt5cb64m16 NT5CC64M16FP NT5CC64M16FP-DI NT5CB64M16FP-DH NT5CC128M8FN-DI

    Untitled

    Abstract: No abstract text available
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP Feature   Output Driver Impedance Control  Differential bidirectional data strobe  Internal self calibration:Internal self calibration Backward compatible to VDD= VDDQ= 1.5V


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP

    IDSH1G-02A1F1C-13H

    Abstract: DDR3-1600H DDR3-1600G IDSH1G-04A1F1C-13G
    Text: December 2008 IDSH1G–02A1F1C IDSH1G–03A1F1C IDSH1G–04A1F1C 1-Gbit Double-Data-Rate-Three SDRAM DDR3 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.65 Advance Internet Data Sheet IDSH1G–0[2/3/4]A1F1C 1-Gbit Double-Data-Rate-Three SDRAM


    Original     		PDF 02A1F1C 03A1F1C 04A1F1C -000B IDSH1G-02A1F1C-13H DDR3-1600H DDR3-1600G IDSH1G-04A1F1C-13G

    Untitled

    Abstract: No abstract text available
    Text: 4Gb DDR3 SDRAM C-Die NT5CB C 512M8CN / NT5CB(C)256M16CP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866 2,3  8n-bit prefetch architecture


    Original     		PDF 512M8CN 256M16CP P124-136 P92-123 P146-156 P137-143

    NT5CB256M16

    Abstract: NT5CC256M16CP-DI NT5CB256M16CP NT5CB256M16CP-DI NT5CC512M8 NT5CB512M8CN-CG NT5CC256M16 wrs4 NT5CB512M8CN NT5CB256
    Text: 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  8n-bit prefetch architecture Power Supply  Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V


    Original     		PDF NT5CB1024M4CN NT5CB512M8CN NT5CB256M16CP NT5CC1024M4CN NT5CC512M8CN NT5CC256M16CP NT5CB256M16 NT5CC256M16CP-DI NT5CB256M16CP-DI NT5CC512M8 NT5CB512M8CN-CG NT5CC256M16 wrs4 NT5CB256

    NT5CB1024M4BN-DI

    Abstract: DDR2 module Dimensions NT5CC256
    Text: 4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  8n-bit prefetch architecture Power Supply  Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V


    Original     		PDF NT5CB1024M4BN NT5CB512M8BN NT5CB256M16BP NT5CC1024M4BN NT5CC512M8BN NT5CC256M16BP NT5CB1024M4BN-DI DDR2 module Dimensions NT5CC256

    ddr3 pc3-10600e

    Abstract: IMSH1GU03A1F1C-08E
    Text: March 2008 IMSH1G[U/E]03A1F1C T IMSH2G[U/E]13A1F1C(T) 240-Pin DDR3 Unbuffered Memory Modules 1GByte and 2GByte RoHS compliant Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet IMSH[1G/2G][U/E]x3A1F1C(T) DDR3 Unbuffered DIMM IMSH1G[U/E]03A1F1C(T), IMSH2G[U/E]13A1F1C(T)


    Original     		PDF 03A1F1C 13A1F1C 240-Pin ddr3 pc3-10600e IMSH1GU03A1F1C-08E

    NT5CC128M16FP

    Abstract: No abstract text available
    Text: 2Gb DDR3 L SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 1,2  TDQS and /TDQS pair for X8  DDR3 - 1866


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP P93-124 P148-158 NT5CC128M16FP

    nt5cc64m

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600  8n-bit prefetch architecture


    Original     		PDF 128M8FN 64M16FP P123-136 P91-122 P137-143 P146-156 nt5cc64m

    NT5CB256M16CP-DII

    Abstract: NT5CC256M16CP-DI NT5CB256M16CP-FL NT5CB512M8CN-DII NT5CB512M8CN-FL NT5CB256M16CP NT5CB512M8CN-EK NT5CB256M16CP-DI NT5CC256M16 NT5CC256M16CP-DII
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP Feature   Output Driver Impedance Control  Differential bidirectional data strobe  Internal self calibration:Internal self calibration Backward compatible to VDD= VDDQ= 1.5V


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP NT5CB256M16CP-DII NT5CC256M16CP-DI NT5CB256M16CP-FL NT5CB512M8CN-DII NT5CB512M8CN-FL NT5CB512M8CN-EK NT5CB256M16CP-DI NT5CC256M16 NT5CC256M16CP-DII

    NT5CC256

    Abstract: NT5CB128M16FP
    Text: 2Gb DDR3 L SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP P146-156 P137-143 P124-136 P92-123 NT5CC256 NT5CB128M16FP

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 L SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP P147-150, NT5CC128M16FP-DIA NT5CC128M16FP-DIH

    NT5CB128m16FP

    Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP x8/78 NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture


    Original     		PDF 128M8FN 64M16FP P135-141 P145-148,