Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DE475102N Search Results

    SF Impression Pixel

    DE475102N Price and Stock

    IXYS Corporation DE475-102N21A

    Rf Mosfet, N Channel, 1Kv, De-475; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:24A; Power Dissipation:1.8Kw; Operating Frequency Min:-; Operating Frequency Max:30Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Ixys Rf DE475-102N21A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DE475-102N21A Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Integrated Circuits Division DE475-102N21A

    RF MOSFET N-CHANNEL DE475 / RF Mosfet N-Channel 1800W DE475
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics DE475-102N21A 200
    • 1 $106.9718
    • 10 $89.7183
    • 100 $89.7183
    • 1000 $89.7183
    • 10000 $89.7183
    		Buy Now

    DE475102N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DE475-102N20A Directed Energy RF Power MOSFET Original PDF
    DE475-102N20A IXYS TRANS MOSFET N-CH 1000V 20A 6DE 475 Original PDF
    DE475-102N21A Directed Energy RF Power MOSFET Original PDF
    DE475-102N21A IXYS TRANS MOSFET N-CH 1000V 24A 6DE 475 Original PDF

    DE475102N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice PDF

    nec 2401

    Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
    Text: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21 PDF

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX PDF

    400P

    Abstract: DE475-102N21A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		DE475-102N21A 30MHz 400P DE475-102N21A PDF

    mosfet 62N

    Abstract: 400P DE475-102N20A 102N20
    Text: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE475-102N20A mosfet 62N 400P DE475-102N20A 102N20 PDF

    nec 2401

    Abstract: 102N20 400P DE475-102N20A PIN diode SPICE model
    Text: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE475-102N20A nec 2401 102N20 400P DE475-102N20A PIN diode SPICE model PDF