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    DEVICE MARKING 03L Search Results

    DEVICE MARKING 03L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING 03L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


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    PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W

    E6433

    Abstract: MARKING CODE 213 marking code 62 3 pin diode diode marking code 58
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


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    PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W E6433 MARKING CODE 213 marking code 62 3 pin diode diode marking code 58

    BFR193L3

    Abstract: ESD8V0L2B-03L IEC61000-4-4 INFINEON marking MARKING B3 dual diode
    Text: ESD8V0L. Dual Channel TVS Diode • ESD / transient protection for data and power lines to IEC61000-4-2 ESD : ± 15 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) • Working voltage: -8 / +14 V • Low capacitance • Low reverse current ESD8V0L2B-03L


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    PDF IEC61000-4-2 IEC61000-4-4 ESD8V0L2B-03L ESD8V0L2B-03L* BFR193L3 ESD8V0L2B-03L IEC61000-4-4 INFINEON marking MARKING B3 dual diode

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Transient Voltage Suppressor Diodes ESD5V3U2U Series Uni-directional Ultra Low ESD / Transient Protection Diode ESD5V3U2U-03F ESD5V3U2U-03LRH Data Sheet Revision 1.3, 2013-08-16 Final Power Management & Multimarket Edition 2013-08-16 Published by


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    PDF ESD5V3U2U-03F ESD5V3U2U-03LRH AN210:

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revision 1.1, 2012-09-26 Final Power Management & Multimarket Edition 2012-09-26 Published by Infineon Technologies AG


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    PDF ESD201-B2-03LRH AN210:

    ST62T00C

    Abstract: KB MARKING PSO16 SSOP16 ST6200L ST6201L ST6203L T01C
    Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system


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    PDF ST6200L/01L/03L ST62T00C KB MARKING PSO16 SSOP16 ST6200L ST6201L ST6203L T01C

    PSO16

    Abstract: st62t00c VR02001 ST6200LM1
    Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system


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    PDF ST6200L/01L/03L PSO16 st62t00c VR02001 ST6200LM1

    BBY53

    Abstract: BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W SC79 SCD80
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


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    PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W BBY53 BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W SC79 SCD80

    SUM110N04-03L

    Abstract: SUM110N04-03L-E3 DEVICE MARKING 03L
    Text: SUM110N04-03L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0035 at VGS = 10 V 40 0.0053 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) Available RoHS* a 110 COMPLIANT


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    PDF SUM110N04-03L O-263 SUM110N04-03L-E3 18-Jul-08 SUM110N04-03L SUM110N04-03L-E3 DEVICE MARKING 03L

    Untitled

    Abstract: No abstract text available
    Text: SUM110N04-03L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0035 at VGS = 10 V 40 0.0053 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) Available RoHS* a 110 COMPLIANT


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    PDF SUM110N04-03L O-263 SUM110N04-03L SUM110N04-03L-E3 08-Apr-05

    ST62T00C

    Abstract: PSO16 ST6200L ST6201L ST6203L T01C
    Text: ST6200L/01L/03L R LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.4 to 3.9V Supply Operating Range 4 MHz Maximum Clock Frequency 0 to +70°C Operating Temperature Range Run, Wait and Stop Modes


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    PDF ST6200L/01L/03L 64bytes ST6203L) ST62T00C PSO16 ST6200L ST6201L ST6203L T01C

    DEVICE MARKING 03L

    Abstract: No abstract text available
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


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    PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 18-Jul-08 DEVICE MARKING 03L

    SQM110N04-03L-GE3

    Abstract: DEVICE MARKING 03L
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


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    PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 SQM110N04-03L-GE3 18-Jul-08 SQM110N04-03L-GE3 DEVICE MARKING 03L

    Untitled

    Abstract: No abstract text available
    Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM120N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM120N04-03L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM120N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM120N04-03L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM120N04-03L AEC-Q101 O-263 2002/95/EC SQM120N04-03L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM110N04-03L AEC-Q101 O-263 2002/95/EC SQM110N04-03L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


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    PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


    Original
    PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053


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    PDF SQM120N04-03L AEC-Q101 O-263 2002/95/EC SQM120N04-03L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    82HS641B

    Abstract: 82HS641B/BJA 82HS641 8200901JX 8200902JA 82HS641A CDFP M38510/8200901JA 93Z667DMQB45 e174
    Text: R EV ISIO N S A P P R O V ED D A TE YR-MO-DA D ESC R IPTIO N LTR Redrawn with changes. Delete vendor C A G E 27014 for PINs 01J , 01L, 013, 02J , 02L, 023, 03J, 03L, and 033. Add vendor C A G E 07933 for PINs 01 J , 01X , and 01L Change vendor C A G E 18324 similar PIN for


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    PDF T00470Ã 82HS641B 82HS641B/BJA 82HS641 8200901JX 8200902JA 82HS641A CDFP M38510/8200901JA 93Z667DMQB45 e174

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.


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    PDF 6Y440 OBK02

    ST62T00C

    Abstract: No abstract text available
    Text: / T 7 SCS-THOM SON EfflO g[S [l[L[l(g¥®(ô Ki]D(gê ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS • 2.4 to 3.9V Supply Operating Range ■ 4 MHz Maximum Clock Frequency ■ 0 to +70°C Operating Temperature Range ■ ■ ■


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    PDF ST6200L/01L/03L 64bytes ST6203L) ST62T00C