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    DF RV TRANSISTOR Search Results

    DF RV TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    DF RV TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DF RV transistor

    Abstract: an7060 MN6626 7337n A1310 2SC3312 2SA1310 2SD1449 2sd1975
    Text: Application Block Diagrams I Audio Applications 1 CD Player M N 6 6 2 7 1 D ig ita l S e rv o ¡1 S ig n a l P r o c e s s in g DF DAC -► M N6626 M N6475A D ig ita i S e rv o P ro c e s s e r M N 6 6 5 0 A (D ig ita l S e rv o 1) LED LN 66A C o n tr o lle r M ic r o c o m p u te r


    OCR Scan     		N6626 N6475A N1870 PNA4601 A1310 2SC3312 AN7060 AX7062N 2SB1371, 2SD1975. DF RV transistor MN6626 7337n 2SC3312 2SA1310 2SD1449 2sd1975 PDF

    2SB810

    Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
    Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o


    OCR Scan     		2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST PDF

    TL08 015

    Abstract: C14A 2SK277 2SK278 T108 T460
    Text: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *


    OCR Scan     		2SK277 278fi, Cycled50 TL08 015 C14A 2SK278 T108 T460 PDF

    IEC 60068-2-31

    Abstract: StR 40000 EASY512-DC-TCX IEC 60068-2-32 AWB2528
    Text: Type: EASY512−DC−TCX Article No.: 274112 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • Screw terminals • Timer Notes concerning the product group Backup of real−time clock (only for appropriate devices)


    Original     		EASY512-DC-TCX ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT IEC 60068-2-31 StR 40000 EASY512-DC-TCX IEC 60068-2-32 AWB2528 PDF

    EASY512-DC-TC

    Abstract: DF RV transistor AWB2528 AWB2528-1508-GB
    Text: Type: EASY512−DC−TC Article No.: 274111 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer Notes concerning the product group


    Original     		EASY512-DC-TC ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT EASY512-DC-TC DF RV transistor AWB2528 AWB2528-1508-GB PDF

    EASY721-DC-TC

    Abstract: AWB2528
    Text: Type: EASY721−DC−TC Article No.: 274121 Ordering information Power supply V DC 24 V DC Description • 12 digital inputs 4 inputs available as analog inputs • 8 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer


    Original     		EASY721-DC-TC ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT EASY721-DC-TC AWB2528 PDF

    Untitled

    Abstract: No abstract text available
    Text: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current


    OCR Scan     		TIPL760, TIPL760A, TIPL761, TIPL761A O-220AB O-218AA TIPL761A T-53-/3 IPL760 PDF

    lp 7979

    Abstract: 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1
    Text: h > v x $ M O S Field Effect Transistor 2SK2090 N ^ ^ I/M ÿ O S F E T 2SK20901Î2.5 V iE fil* < 7°C0N^ + * ; U » M O S FET ÜMft : mm T i g l i T '§ , * » o K < f c f - Is tts J :i/ t f - r # ^ ^ 4# • « y - h $ 2 .5 V T i Ê Ü T ÿ ^ o • ¡ÜÀ^-f >\^-^>X(DtzSb, HZIif >7(ï£ # Jt t $ #


    OCR Scan     		2SK2090 2SK20901Ã D11228JJ2V0DS00 TC-7979) lp 7979 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1 PDF

    B0508

    Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
    Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS


    OCR Scan     		b3b7E54 BD505. BD507, BD509 BD506. BD506 506-BD B0508 transistor f 506 506bd BD507 uniwatt BD510 80509 BD505 PDF

    HA20

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage


    OCR Scan     		O-218 C67078-A3207-A2 HA20 PDF

    37044

    Abstract: TIPL757
    Text: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current


    OCR Scan     		TIPL757, TIPL757A TIPL757 TIPL757A 37044 TIPL757 PDF

    transistor 7830

    Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
    Text: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o


    OCR Scan     		2SK679A 2SK679Aà 105UCiOtfà transistor 7830 D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830 PDF

    L9936

    Abstract: LDP24A motor driver full bridge 20A C2988 circuit diagram of braking system 74HC4050 BY239 MULTIWATT8 H89L transistor collector diode protection
    Text: HALF BRIDGE MOTOR DRIVER • ■ ■ ■ ■ ■ ■ 20A OUTPUT CURREN T/DC OPERATION LOW SATURATION VOLTAGE VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OUTPUT INTERNAL TEMPERATURE SENSOR GROUNDED CASE MULTIWATT-8 PACKAGE WITH HIGH CUR­ RENT LEADS


    OCR Scan     		L9936 L9936 LDP24A motor driver full bridge 20A C2988 circuit diagram of braking system 74HC4050 BY239 MULTIWATT8 H89L transistor collector diode protection PDF

    c185 transistor

    Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
    Text: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use


    OCR Scan     		2SK293 2SK293, K293AÃ ms0582 c185 transistor 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33 PDF

    TDA 1500

    Abstract: TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195
    Text: SIEMENS Multistandard Video and Sound IF TDA 6930 X Preliminary Data Features • • • • • • • • • Multistandard application for all terrestrial standards FPLL video demodulator Delayed tuner AGC voltage output AFC signal output Quasi parallel sound


    OCR Scan     		Q67007-A5217 P-DSO-28-1 6930X 35x45" GPS05123 TDA 1500 TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195 PDF

    CANopen RJ45 resistor

    Abstract: C2007G XC161 EC4P-221-MRAD1 IEC 60068-2-31 I9 transistor easynet
    Text: Type: EC4P−221−MRAD1 Article No.: 106397 Sales text 24 VDC,Can,12E, 6Relais,Displ.,Analog QA Expandable: Inputs/outputs and bus systems Individual laser inscription possible with EC4−COMBINATION−* 107600 Ordering information Description easy−NET/CANopen on board


    Original     		EC4P-221-MRAD1 D-53115 HPL-C2007G CANopen RJ45 resistor C2007G XC161 EC4P-221-MRAD1 IEC 60068-2-31 I9 transistor easynet PDF

    Untitled

    Abstract: No abstract text available
    Text: 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-termi­ nal linear regulator with circuitry con­ trolling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated


    OCR Scan     		500mA, CS5231-3 CS5231-3 500mA MS-012 CS5231-3GDP5 CS5231-3GDPR5 CS5231-3GDF8 CS5231-3GDFR8 PDF

    2SK992

    Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
    Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.


    OCR Scan     		2SK992 26-Lfli06) 332-H 37-ffi 29-BlSfl 2SK992 U71E 720-ES RXSU 4 T108 T460 332h tt 22 PDF

    D1351

    Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
    Text: v 1J Z ] > Silicon Transistor 2 «1 S A 1 1 7 : mm ft o M i i a u i M i * * * * <, cnr^i t o2S C 2785t 3 > 7 U y 7 To 2 .0±0.2 4.0±0.2 6* 6* CM N. .*) 6* M4 6* (T a = 25 *C) « * * * * £ » m i # 0 .5 * § z\ \s 0 $ • 'K - * M |BJ * E £ # $ VCBO *


    OCR Scan     		2SA1175 02SC2785i: D1351 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor PDF

    2N6766

    Abstract: 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200
    Text: □1 3875081 G E "dF ^ 3 SOLID ô ?5001 0 0 1 04 04 0 1~~_ T'3?'/3 0 1E 18 4 0 4 D _ Standard Power M O S F E T s STATE File Number 1591 2N6766 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		2N6766 2N6766 can00 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200 PDF

    2N2160

    Abstract: No abstract text available
    Text: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance


    OCR Scan     		2N2160 PDF

    MJ150BK100

    Abstract: MOTOROLA 4221 4221 motorola transistor
    Text: 6 3 6 7 2 5 4 MOTOROLA S C MOTOROLA <XSTRS/R F 89D 79972 d 3 3 ^ 3 cT Order this data sheet by MJ150BK100/D Së)b3b7as4 DOTwa SEM ICO N D UCTO R • ■■ m "\ ^ 7 m TECHNICAL DATA NPN Silicon Pow er Transistor M odule Energy M anagem ent Series DUAL TRISTAGE


    OCR Scan     		MJ150BK100/D MK145BP, MJ150BK100 MJ150BK100 MOTOROLA 4221 4221 motorola transistor PDF

    lt 5217

    Abstract: ic op 5218 IP626 T1P62 T1P620
    Text: TEXAS INSTR ÎOPTOJ 8961726 TEXAS IN STR 62C <OPTO> 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D r R EV ISED O CTOBER 1984 • Designed For Complementary use with TIP625, T IP626, TIP627 • 65 W at 2 5 ° C Case Temperature


    OCR Scan     		TIP620, TIP621, TIP622 TIP625, IP626, TIP627 T-33-29 lt 5217 ic op 5218 IP626 T1P62 T1P620 PDF

    Untitled

    Abstract: No abstract text available
    Text: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable


    OCR Scan     		SNA-600 SNA-600 18dBm 100mA. SNA-676, PDF