IEC 60068-2-31
Abstract: StR 40000 EASY512-DC-TCX IEC 60068-2-32 AWB2528
Text: Type: EASY512−DC−TCX Article No.: 274112 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • Screw terminals • Timer Notes concerning the product group Backup of real−time clock (only for appropriate devices)
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EASY512-DC-TCX
ZB4-101-GF1
AWB2528-1508GB,
AWB2528-1423D
D-53115
HPL-C2006GB-INT
IEC 60068-2-31
StR 40000
EASY512-DC-TCX
IEC 60068-2-32
AWB2528
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EASY512-DC-TC
Abstract: DF RV transistor AWB2528 AWB2528-1508-GB
Text: Type: EASY512−DC−TC Article No.: 274111 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer Notes concerning the product group
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EASY512-DC-TC
ZB4-101-GF1
AWB2528-1508GB,
AWB2528-1423D
D-53115
HPL-C2006GB-INT
EASY512-DC-TC
DF RV transistor
AWB2528
AWB2528-1508-GB
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EASY721-DC-TC
Abstract: AWB2528
Text: Type: EASY721−DC−TC Article No.: 274121 Ordering information Power supply V DC 24 V DC Description • 12 digital inputs 4 inputs available as analog inputs • 8 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer
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EASY721-DC-TC
ZB4-101-GF1
AWB2528-1508GB,
AWB2528-1423D
D-53115
HPL-C2006GB-INT
EASY721-DC-TC
AWB2528
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CANopen RJ45 resistor
Abstract: C2007G XC161 EC4P-221-MRAD1 IEC 60068-2-31 I9 transistor easynet
Text: Type: EC4P−221−MRAD1 Article No.: 106397 Sales text 24 VDC,Can,12E, 6Relais,Displ.,Analog QA Expandable: Inputs/outputs and bus systems Individual laser inscription possible with EC4−COMBINATION−* 107600 Ordering information Description easy−NET/CANopen on board
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EC4P-221-MRAD1
D-53115
HPL-C2007G
CANopen RJ45 resistor
C2007G
XC161
EC4P-221-MRAD1
IEC 60068-2-31
I9 transistor
easynet
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DF RV transistor
Abstract: an7060 MN6626 7337n A1310 2SC3312 2SA1310 2SD1449 2sd1975
Text: Application Block Diagrams I Audio Applications 1 CD Player M N 6 6 2 7 1 D ig ita l S e rv o ¡1 S ig n a l P r o c e s s in g DF DAC -► M N6626 M N6475A D ig ita i S e rv o P ro c e s s e r M N 6 6 5 0 A (D ig ita l S e rv o 1) LED LN 66A C o n tr o lle r M ic r o c o m p u te r
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N6626
N6475A
N1870
PNA4601
A1310
2SC3312
AN7060
AX7062N
2SB1371,
2SD1975.
DF RV transistor
MN6626
7337n
2SC3312
2SA1310
2SD1449
2sd1975
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2SB810
Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o
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2SB810
O2SD1020ta
d11736jj4v0ds00
JIS211
2SB810
JIS211
transistor C982
C382
n1j 048
ic 6116
IC 7824 ST
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TL08 015
Abstract: C14A 2SK277 2SK278 T108 T460
Text: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *
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2SK277
278fi,
Cycled50
TL08 015
C14A
2SK278
T108
T460
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Untitled
Abstract: No abstract text available
Text: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current
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TIPL760,
TIPL760A,
TIPL761,
TIPL761A
O-220AB
O-218AA
TIPL761A
T-53-/3
IPL760
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lp 7979
Abstract: 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1
Text: h > v x $ M O S Field Effect Transistor 2SK2090 N ^ ^ I/M ÿ O S F E T 2SK20901Î2.5 V iE fil* < 7°C0N^ + * ; U » M O S FET ÜMft : mm T i g l i T '§ , * » o K < f c f - Is tts J :i/ t f - r # ^ ^ 4# • « y - h $ 2 .5 V T i Ê Ü T ÿ ^ o • ¡ÜÀ^-f >\^-^>X(DtzSb, HZIif >7(ï£ # Jt t $ #
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2SK2090
2SK20901Ã
D11228JJ2V0DS00
TC-7979)
lp 7979
9T TRANSISTOR
2SK2090
marking jep diode
RFT M-1
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B0508
Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS
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b3b7E54
BD505.
BD507,
BD509
BD506.
BD506
506-BD
B0508
transistor f 506
506bd
BD507
uniwatt
BD510
80509
BD505
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HA20
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage
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O-218
C67078-A3207-A2
HA20
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37044
Abstract: TIPL757
Text: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current
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TIPL757,
TIPL757A
TIPL757
TIPL757A
37044
TIPL757
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transistor 7830
Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
Text: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o
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2SK679A
2SK679AÃ
105UCiOtfÃ
transistor 7830
D1488
2sk679
2SK679A
TRANSISTOR TT 2190
I-D05
TA-75
transistor M 7830
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L9936
Abstract: LDP24A motor driver full bridge 20A C2988 circuit diagram of braking system 74HC4050 BY239 MULTIWATT8 H89L transistor collector diode protection
Text: HALF BRIDGE MOTOR DRIVER • ■ ■ ■ ■ ■ ■ 20A OUTPUT CURREN T/DC OPERATION LOW SATURATION VOLTAGE VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OUTPUT INTERNAL TEMPERATURE SENSOR GROUNDED CASE MULTIWATT-8 PACKAGE WITH HIGH CUR RENT LEADS
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L9936
L9936
LDP24A
motor driver full bridge 20A
C2988
circuit diagram of braking system
74HC4050
BY239
MULTIWATT8
H89L
transistor collector diode protection
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d00030
Abstract: 2SA1741 T108 BH RV transistor
Text: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3
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2SA1741
d00030
2SA1741
T108
BH RV transistor
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TDA 1500
Abstract: TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195
Text: SIEMENS Multistandard Video and Sound IF TDA 6930 X Preliminary Data Features • • • • • • • • • Multistandard application for all terrestrial standards FPLL video demodulator Delayed tuner AGC voltage output AFC signal output Quasi parallel sound
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Q67007-A5217
P-DSO-28-1
6930X
35x45"
GPS05123
TDA 1500
TDA6930X
AFC marking
carrier recovery
external tv tuner
Q67007-A5217
tank if SMD MARKING CODE
TDA 1195
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Untitled
Abstract: No abstract text available
Text: 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-termi nal linear regulator with circuitry con trolling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated
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500mA,
CS5231-3
CS5231-3
500mA
MS-012
CS5231-3GDP5
CS5231-3GDPR5
CS5231-3GDF8
CS5231-3GDFR8
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2SK992
Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.
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2SK992
26-Lfli06)
332-H
37-ffi
29-BlSfl
2SK992
U71E
720-ES
RXSU 4
T108
T460
332h
tt 22
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D1351
Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
Text: v 1J Z ] > Silicon Transistor 2 «1 S A 1 1 7 : mm ft o M i i a u i M i * * * * <, cnr^i t o2S C 2785t 3 > 7 U y 7 To 2 .0±0.2 4.0±0.2 6* 6* CM N. .*) 6* M4 6* (T a = 25 *C) « * * * * £ » m i # 0 .5 * § z\ \s 0 $ • 'K - * M |BJ * E £ # $ VCBO *
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2SA1175
02SC2785i:
D1351
2SA1175
TRANSISTOR 2SA1175
2SA11
2sa1175 transistor
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2N6766
Abstract: 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200
Text: □1 3875081 G E "dF ^ 3 SOLID ô ?5001 0 0 1 04 04 0 1~~_ T'3?'/3 0 1E 18 4 0 4 D _ Standard Power M O S F E T s STATE File Number 1591 2N6766 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE
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2N6766
2N6766
can00
2N6166
200a liu
TS0A
2N6765
tic 120
JVC kd 200
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2N2160
Abstract: No abstract text available
Text: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance
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2N2160
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MJ150BK100
Abstract: MOTOROLA 4221 4221 motorola transistor
Text: 6 3 6 7 2 5 4 MOTOROLA S C MOTOROLA <XSTRS/R F 89D 79972 d 3 3 ^ 3 cT Order this data sheet by MJ150BK100/D Së)b3b7as4 DOTwa SEM ICO N D UCTO R • ■■ m "\ ^ 7 m TECHNICAL DATA NPN Silicon Pow er Transistor M odule Energy M anagem ent Series DUAL TRISTAGE
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MJ150BK100/D
MK145BP,
MJ150BK100
MJ150BK100
MOTOROLA 4221
4221 motorola transistor
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lt 5217
Abstract: ic op 5218 IP626 T1P62 T1P620
Text: TEXAS INSTR ÎOPTOJ 8961726 TEXAS IN STR 62C <OPTO> 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D r R EV ISED O CTOBER 1984 • Designed For Complementary use with TIP625, T IP626, TIP627 • 65 W at 2 5 ° C Case Temperature
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TIP620,
TIP621,
TIP622
TIP625,
IP626,
TIP627
T-33-29
lt 5217
ic op 5218
IP626
T1P62
T1P620
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor mance to 6.5 GHz. DC-6.5 GHz, Cascadable
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SNA-600
SNA-600
18dBm
100mA.
SNA-676,
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