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    DF RV TRANSISTOR Search Results

    DF RV TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DF RV TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC 60068-2-31

    Abstract: StR 40000 EASY512-DC-TCX IEC 60068-2-32 AWB2528
    Text: Type: EASY512−DC−TCX Article No.: 274112 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • Screw terminals • Timer Notes concerning the product group Backup of real−time clock (only for appropriate devices)


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    PDF EASY512-DC-TCX ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT IEC 60068-2-31 StR 40000 EASY512-DC-TCX IEC 60068-2-32 AWB2528

    EASY512-DC-TC

    Abstract: DF RV transistor AWB2528 AWB2528-1508-GB
    Text: Type: EASY512−DC−TC Article No.: 274111 Ordering information Power supply V DC 24 V DC Description • 8 digital inputs 2 inputs available as analog inputs • 4 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer Notes concerning the product group


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    PDF EASY512-DC-TC ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT EASY512-DC-TC DF RV transistor AWB2528 AWB2528-1508-GB

    EASY721-DC-TC

    Abstract: AWB2528
    Text: Type: EASY721−DC−TC Article No.: 274121 Ordering information Power supply V DC 24 V DC Description • 12 digital inputs 4 inputs available as analog inputs • 8 transistor outputs • LCD display • Operating buttons • Screw terminals • Timer


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    PDF EASY721-DC-TC ZB4-101-GF1 AWB2528-1508GB, AWB2528-1423D D-53115 HPL-C2006GB-INT EASY721-DC-TC AWB2528

    CANopen RJ45 resistor

    Abstract: C2007G XC161 EC4P-221-MRAD1 IEC 60068-2-31 I9 transistor easynet
    Text: Type: EC4P−221−MRAD1 Article No.: 106397 Sales text 24 VDC,Can,12E, 6Relais,Displ.,Analog QA Expandable: Inputs/outputs and bus systems Individual laser inscription possible with EC4−COMBINATION−* 107600 Ordering information Description easy−NET/CANopen on board


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    PDF EC4P-221-MRAD1 D-53115 HPL-C2007G CANopen RJ45 resistor C2007G XC161 EC4P-221-MRAD1 IEC 60068-2-31 I9 transistor easynet

    DF RV transistor

    Abstract: an7060 MN6626 7337n A1310 2SC3312 2SA1310 2SD1449 2sd1975
    Text: Application Block Diagrams I Audio Applications 1 CD Player M N 6 6 2 7 1 D ig ita l S e rv o ¡1 S ig n a l P r o c e s s in g DF DAC -► M N6626 M N6475A D ig ita i S e rv o P ro c e s s e r M N 6 6 5 0 A (D ig ita l S e rv o 1) LED LN 66A C o n tr o lle r M ic r o c o m p u te r


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    PDF N6626 N6475A N1870 PNA4601 A1310 2SC3312 AN7060 AX7062N 2SB1371, 2SD1975. DF RV transistor MN6626 7337n 2SC3312 2SA1310 2SD1449 2sd1975

    2SB810

    Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
    Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o


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    PDF 2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST

    TL08 015

    Abstract: C14A 2SK277 2SK278 T108 T460
    Text: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *


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    PDF 2SK277 278fi, Cycled50 TL08 015 C14A 2SK278 T108 T460

    Untitled

    Abstract: No abstract text available
    Text: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current


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    PDF TIPL760, TIPL760A, TIPL761, TIPL761A O-220AB O-218AA TIPL761A T-53-/3 IPL760

    lp 7979

    Abstract: 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1
    Text: h > v x $ M O S Field Effect Transistor 2SK2090 N ^ ^ I/M ÿ O S F E T 2SK20901Î2.5 V iE fil* < 7°C0N^ + * ; U » M O S FET ÜMft : mm T i g l i T '§ , * » o K < f c f - Is tts J :i/ t f - r # ^ ^ 4# • « y - h $ 2 .5 V T i Ê Ü T ÿ ^ o • ¡ÜÀ^-f >\^-^>X(DtzSb, HZIif >7(ï£ # Jt t $ #


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    PDF 2SK2090 2SK20901Ã D11228JJ2V0DS00 TC-7979) lp 7979 9T TRANSISTOR 2SK2090 marking jep diode RFT M-1

    B0508

    Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
    Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS


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    PDF b3b7E54 BD505. BD507, BD509 BD506. BD506 506-BD B0508 transistor f 506 506bd BD507 uniwatt BD510 80509 BD505

    HA20

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage


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    PDF O-218 C67078-A3207-A2 HA20

    37044

    Abstract: TIPL757
    Text: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current


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    PDF TIPL757, TIPL757A TIPL757 TIPL757A 37044 TIPL757

    transistor 7830

    Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
    Text: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o


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    PDF 2SK679A 2SK679Aà 105UCiOtfà transistor 7830 D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830

    L9936

    Abstract: LDP24A motor driver full bridge 20A C2988 circuit diagram of braking system 74HC4050 BY239 MULTIWATT8 H89L transistor collector diode protection
    Text: HALF BRIDGE MOTOR DRIVER • ■ ■ ■ ■ ■ ■ 20A OUTPUT CURREN T/DC OPERATION LOW SATURATION VOLTAGE VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OUTPUT INTERNAL TEMPERATURE SENSOR GROUNDED CASE MULTIWATT-8 PACKAGE WITH HIGH CUR­ RENT LEADS


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    PDF L9936 L9936 LDP24A motor driver full bridge 20A C2988 circuit diagram of braking system 74HC4050 BY239 MULTIWATT8 H89L transistor collector diode protection

    d00030

    Abstract: 2SA1741 T108 BH RV transistor
    Text: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3


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    PDF 2SA1741 d00030 2SA1741 T108 BH RV transistor

    TDA 1500

    Abstract: TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195
    Text: SIEMENS Multistandard Video and Sound IF TDA 6930 X Preliminary Data Features • • • • • • • • • Multistandard application for all terrestrial standards FPLL video demodulator Delayed tuner AGC voltage output AFC signal output Quasi parallel sound


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    PDF Q67007-A5217 P-DSO-28-1 6930X 35x45" GPS05123 TDA 1500 TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195

    Untitled

    Abstract: No abstract text available
    Text: 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-termi­ nal linear regulator with circuitry con­ trolling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated


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    PDF 500mA, CS5231-3 CS5231-3 500mA MS-012 CS5231-3GDP5 CS5231-3GDPR5 CS5231-3GDF8 CS5231-3GDFR8

    2SK992

    Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
    Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.


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    PDF 2SK992 26-Lfli06) 332-H 37-ffi 29-BlSfl 2SK992 U71E 720-ES RXSU 4 T108 T460 332h tt 22

    D1351

    Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
    Text: v 1J Z ] > Silicon Transistor 2 «1 S A 1 1 7 : mm ft o M i i a u i M i * * * * <, cnr^i t o2S C 2785t 3 > 7 U y 7 To 2 .0±0.2 4.0±0.2 6* 6* CM N. .*) 6* M4 6* (T a = 25 *C) « * * * * £ » m i # 0 .5 * § z\ \s 0 $ • 'K - * M |BJ * E £ # $ VCBO *


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    PDF 2SA1175 02SC2785i: D1351 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor

    2N6766

    Abstract: 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200
    Text: □1 3875081 G E "dF ^ 3 SOLID ô ?5001 0 0 1 04 04 0 1~~_ T'3?'/3 0 1E 18 4 0 4 D _ Standard Power M O S F E T s STATE File Number 1591 2N6766 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


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    PDF 2N6766 2N6766 can00 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200

    2N2160

    Abstract: No abstract text available
    Text: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance


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    PDF 2N2160

    MJ150BK100

    Abstract: MOTOROLA 4221 4221 motorola transistor
    Text: 6 3 6 7 2 5 4 MOTOROLA S C MOTOROLA <XSTRS/R F 89D 79972 d 3 3 ^ 3 cT Order this data sheet by MJ150BK100/D Së)b3b7as4 DOTwa SEM ICO N D UCTO R • ■■ m "\ ^ 7 m TECHNICAL DATA NPN Silicon Pow er Transistor M odule Energy M anagem ent Series DUAL TRISTAGE


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    PDF MJ150BK100/D MK145BP, MJ150BK100 MJ150BK100 MOTOROLA 4221 4221 motorola transistor

    lt 5217

    Abstract: ic op 5218 IP626 T1P62 T1P620
    Text: TEXAS INSTR ÎOPTOJ 8961726 TEXAS IN STR 62C <OPTO> 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D r R EV ISED O CTOBER 1984 • Designed For Complementary use with TIP625, T IP626, TIP627 • 65 W at 2 5 ° C Case Temperature


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    PDF TIP620, TIP621, TIP622 TIP625, IP626, TIP627 T-33-29 lt 5217 ic op 5218 IP626 T1P62 T1P620

    Untitled

    Abstract: No abstract text available
    Text: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable


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    PDF SNA-600 SNA-600 18dBm 100mA. SNA-676,