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    DF451 Search Results

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    DF451 Price and Stock

    Thomas & Betts DF4516FRAB0

    400A Rec 4P5W Mg 516 Ab0 3Py120 |Abb Thomas & Betts DF4516FRAB0
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    Onlinecomponents.com DF4516FRAB0
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    Master Electronics DF4516FRAB0
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    Thomas & Betts DF4514FRAB0

    400A Rec 4P5W Mg 514 3Py347V Fc |Abb Thomas & Betts DF4514FRAB0
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    Newark DF4514FRAB0 Bulk 1
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    Onlinecomponents.com DF4514FRAB0
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    Master Electronics DF4514FRAB0
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    Thomas & Betts DF4514FRABK

    400A Rec 4P5W Mg 514 3Py347V Cc Fc |Abb Thomas & Betts DF4514FRABK
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    Onlinecomponents.com DF4514FRABK
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    Master Electronics DF4514FRABK
    • 1 $12083.52
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    Thomas & Betts DF4516FP000

    400A Con 4P5W Mg 516 3Py120 |Abb Thomas & Betts DF4516FP000
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    Onlinecomponents.com DF4516FP000
    • 1 $8942.81
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    Master Electronics DF4516FP000
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    Thomas & Betts DF4516FRA0K

    400A Rec 4P5W Mg 516 Agl 3Py120 Cc |Abb Thomas & Betts DF4516FRA0K
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    Onlinecomponents.com DF4516FRA0K
    • 1 $9568.95
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    Master Electronics DF4516FRA0K
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    DF451 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DF451 Dynex Fast Recovery Diode Original PDF
    DF45101 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF451-02 SGS-Thomson 250A Iout, 206V Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45102 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF451-04 SGS-Thomson 250A Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45104 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF45106 Dynex Fast Recovery Diode Original PDF
    DF451-06 SGS-Thomson 250A Iout, 600V Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45106 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF45108 Dynex Fast Recovery Diode Original PDF
    DF451-08 SGS-Thomson 250A Iout, 800V Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45108 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF45110 Dynex Fast Recovery Diode Original PDF
    DF451-10 SGS-Thomson 250A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45110 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF45112 Dynex Fast Recovery Diode Original PDF
    DF451-12 SGS-Thomson 250A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier Scan PDF
    DF45112 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    DF45114 Dynex Fast Recovery Diode Original PDF
    DF451-14 SGS-Thomson 250A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF

    DF451 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M771

    Abstract: DF451 sine wave ups designing
    Text: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS


    Original
    PDF DF451 DS4142-5 DS4143-6 DF451 M771 sine wave ups designing

    AN4506

    Abstract: AN4839 AN4853 DF451 M771
    Text: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications


    Original
    PDF DF451 DS4142-4 DS4143-5 DF451 AN4506 AN4839 AN4853 M771

    DF451

    Abstract: No abstract text available
    Text: DF451 DF451 Fast Recovery Diode  FEATURES • Double Side Cooling ■ High Surge Capability


    Original
    PDF DF451 DS4143- DF451

    DF451

    Abstract: M771
    Text: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS


    Original
    PDF DF451 DS4142-5 DS4143-6 DF451 M771

    Untitled

    Abstract: No abstract text available
    Text: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS


    Original
    PDF DF451 DS4142-5 DS4143-6 DF451

    DF451

    Abstract: M771
    Text: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications


    Original
    PDF DF451 DS4142-4 DS4143-5 DF451 M771

    Untitled

    Abstract: No abstract text available
    Text: FEBRUARY 1996 DF451 DS4143-3.4 DF451 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.


    Original
    PDF DF451 DS4143-3 DF451

    ultrasonic generator 40khz

    Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
    Text: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications


    Original
    PDF TA329. DS4680-2 DS4680-3 400Hz 40kHz ultrasonic generator 40khz GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    TA449

    Abstract: DF451
    Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4681-5.0 DS4681-5.1 July 2002 APPLICATIONS KEY PARAMETERS • UPS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs ■ Induction Heating


    Original
    PDF TA449. DS4681-5 20kHz TA449 DF451

    Untitled

    Abstract: No abstract text available
    Text: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2345674281 9ABC12C81 DEC221 F19AAA1 24A4281 9ABC12C81 DEC221 D1AA1E 1 24!A"41 9ABC1C21 DEC21 #A$1%&A1 1 1 1 1


    Original
    PDF 1234567895ABC5DEF 9ABC12C81 DEC221 9ABC12C8 DEC21 123456789A88B889BCD4E6FDC34DD68 88B88 88B88 63B4F588B88

    TA32912Q

    Abstract: TA329-12Q TA32914Q TA32910Q TA329-14Q
    Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A


    Original
    PDF TA329. DS4680-3 400Hz 40kHz TA32912Q TA329-12Q TA32914Q TA32910Q TA329-14Q

    GATE ASSISTED TURN-OFF THYRISTORS

    Abstract: ultrasonic generator 40khz AN4839 DF451 TA329
    Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A


    Original
    PDF TA329. DS4680-3 400Hz 40kHz TA329 GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 40khz AN4839 DF451

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    65c812

    Abstract: asymmetric thyristor DF451 TA449 RC snubber dc motor RC snubber thyristor design AN484 MU86
    Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs APPLICATIONS • UPS ■ Induction Heating


    Original
    PDF TA449. DS4681-4 DS4681-5 20kHz TA449 65c812 asymmetric thyristor DF451 RC snubber dc motor RC snubber thyristor design AN484 MU86

    Untitled

    Abstract: No abstract text available
    Text: GEC P L ES S E Y SEMICONDUCTORS W DS4143-3.4 DF451 FAST RECOVERY DIODE APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification. ■ UPS. KEY PARAMETERS v RUM 1600V 295A Jf<AV 3500A


    OCR Scan
    PDF DS4143-3 DF451 000A/ns,

    M779b

    Abstract: M771 bsr55 DYNEx
    Text: Part and Ordering Number VRRM IRRM @TV ^R M S ) @ Tc = 65C 65’C UsM l2t @Tv) @Tvj vTO @Tvj rT @Tv, p th J-c) p th(c-hs) Tv, (V) (mA) (A) (A) (kA) (A2sx103) (V) (mü) (°C/W) (°C/W) CC) ESM4120* DF451 * 600-1000 600-1600 100 100 334 295 565 543 4.5 3.5


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    PDF i/100 sx103 ESM4120* DF451 DF252* DF452* DF653* DFS454* M779b CB450 M771 bsr55 DYNEx

    Untitled

    Abstract: No abstract text available
    Text: DF451 M ITEL Fast Recovery Diode S E M IC O N D U C T O R Supersedes February 1996 version, DS4143 - 3.4 DS4143 - 3.5 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 295A F AV 1FSM 3500A 25|lC Qr 1.22|iS t rr • Induction Heating. ■ A.C. M otor Drives.


    OCR Scan
    PDF DF451 DS4143 DF451

    TA32910Q

    Abstract: No abstract text available
    Text: M ITEL TA329.Q Asymmetric Thyristor S E M IC O N D U C T O R DS4680 - 2.1 Supersedes January 1997 version, DS4680 - 2.0 KEY PARAMETERS 1400V DRM 370A ^T RMS 2000A ^TSM dVdt 1000V/|iS d l/d t 1000A/|iS t. 7.0(iS APPLICATIONS • High Frequency Applications.


    OCR Scan
    PDF DS4680 TA329. TA32910Q

    DYNEx

    Abstract: DG306AE
    Text: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500


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    PDF DGT304SE* DG306AE* DG406BP* DG646BH* DG856BW* DG408BP* DGT304SE DG306AE DG406BP DG646BH DYNEx

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S W DS4681-4.1 TA449.W ASYMMETRIC THYRISTOR APPLICATIONS • ■ KEY PARAMETERS V Drm UPS. Induction Heating. ■ A.C. Motor Drives. ■ 1400V ^ rms >TSM dVdt dl/dt Switch Mode Power Supplies.


    OCR Scan
    PDF DS4681-4 TA449. 20kHz. TA449 TA44910W 37bfl522

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S DS4680-4.1 TA329.Q ASYMMETRIC THYRISTOR APPLICATIONS KEY PARAMETERS 1400V DRM 370A -T RMS 2000A ^SM dVdt 1 0 0 0 V / ( is 1000A /H S dl/dt • High Frequency Applications. ■ High Power Choppers And Inverters.


    OCR Scan
    PDF DS4680-4 TA329. 400Hz 40kHz. 37b6S22

    ta44912w

    Abstract: No abstract text available
    Text: TA449.W M ITEL Asymmetric Thyristor S E M IC O N D U C T O R Supersedes January 1997 version, DS4681 - 4.0 DS4681 - 4.1 APPLICATIONS March 1998 KEY PARAMETERS 1400V DRM 400A ^T RMS 4000A ^TSM dVdt 1000V/(is d l/d t 1OOOA/jis t. 10.0|is • UPS. ■ Induction Heating.


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    PDF TA449. DS4681 20kHz. TA44914W TA44912W TA44910W