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    DG-30 TRANSISTOR Search Results

    DG-30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DG-30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd code marking ft sot23

    Abstract: smd code marking sot23 data sheet for all smd components MARKING SMD IC CODE 2PB710ARL 2PB710ASL 2PD602ARL 2PD602ASL
    Text: 2PB710ARL; 2PB710ASL 50 V, 500 mA PNP general-purpose transistors Rev. 01 — 29 October 2008 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.


    Original     		2PB710ARL; 2PB710ASL O-236AB) 2PB710ARL O-236AB 2PD602ARL 2PD602ASL 2PB710ARL/DG smd code marking ft sot23 smd code marking sot23 data sheet for all smd components MARKING SMD IC CODE 2PB710ARL 2PB710ASL 2PD602ARL 2PD602ASL PDF

    transistor marking DG

    Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
    Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one


    Original     		OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor PDF

    smd code marking ft sot23

    Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
    Text: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.


    Original     		2PD602AQL; 2PD602ARL; 2PD602ASL O-236AB) 2PD602AQL O-236AB 2PD602ARL 2PB710ARL 2PB710ASL smd code marking ft sot23 marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG PDF

    BCM856BS

    Abstract: BCM856DS TRANSISTOR SMD MARKING CODE BS t marking code DG SMD Transistor
    Text: BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG OT363 SC-88 OT457 BCM856BS SC-74 BCM856BS BCM856DS TRANSISTOR SMD MARKING CODE BS t marking code DG SMD Transistor PDF

    8204

    Abstract: No abstract text available
    Text: S DG 8204 S amHop Microelectronics C orp. Dec 27,2004 V er1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.


    Original     		PDF

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 PDF

    MFE3003

    Abstract: No abstract text available
    Text: MFE3003 silicon Silicon P-channel MOS field-effect transistor de­ signed for chopper applications. MAXIMUM RATIN GS Symbol Rating v D rain -G ate Voltage V D rain C u rre n t DRAIN SOURCE GATE CASE AND SUBSTRATE 15 Vdc DG 20 Vdc *30 Vdc 30 h> T o tal D evice D issip atio n @ TA = 25°C


    OCR Scan     		MFE3003 MFE3003 PDF

    BF441

    Abstract: No abstract text available
    Text: MMBF4416LT1* M AXIM UM RATINGS Rating Symbol Value D rain-Source Voltage V DS 30 Vdc Drain-G ate Voltage V DG 30 Vdc G ate-Source Voltage VG S 30 Vdc 'G 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB U nit ¿ s o u rc e G ate ~ ^ ) TH ERM A L CH A RA C TERISTICS


    OCR Scan     		MMBF4416LT1* OT-23 O-236AB) BF4416LT1 BF441 PDF

    MPF970

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Rating Unit Symbol Value Drain-Source Voltage V DS 25 Vdc Drain-Gate Voltage V DG 30 Vdc V G SR 30 Vdc 'G f| 10 m Adc PD 350 2.8 mW mW X ^stq - 65 to +- 150 °C ^channel - 65 to + 150 C Reverse Gate-Source Voltage Forw ard Gate Current Total Device Dissipation


    OCR Scan     		MPF970, MPF971 MPF970 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTORCLA SC X S T R S /R F D | fc3t,?aSM a o a b ? fl7 T'3l-JlS~ fl | MPF4223 MPF4224 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 uratn M A X IM U M RATINGS Symbol Value Unit Drain<Source Voltage Rating Vd s 30 Vdc Drain*Gate Voltage V dg 30 Vdc Drain Current Id


    OCR Scan     		MPF4223 MPF4224 O-226AA) MPF4223 MPF4224 PDF

    MBF4391LT1

    Abstract: MBF4393LT1 BF439 BF4391LT1 BF4392 MMBF4393LT1 4391l 4391LT1 BF4391 BF4393
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BF4391LT1 M M BF4392LT1 M M BF4393LT1 J F E T S w it c h in g T r a n s is t o r s N-Channel 2 SOURCE 1 DRAIN MAXIMUM RATINGS Rating D rain-Source Voltage Symbol Value Unit Vdc Vdc V DS 30 Drain-Gate Voltage V DG 30


    OCR Scan     		4391LT 4392LT 4393LT O-236AB) BF4391LT1 BF4392LT1 MMBF4392 MBF4391LT1 MBF4393LT1 BF439 BF4391LT1 BF4392 MMBF4393LT1 4391l 4391LT1 BF4391 BF4393 PDF

    MPF4860

    Abstract: MPF4861
    Text: MPF4856 thru MPF4861* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATIN GS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Symbol MPF4856 MPF4S57 MPF4658 MPF4859 MPF4860 MPF4861 Unit Vd S - 40 - 30 Vdc V DG - 40 +•30 Vdc VG SR


    OCR Scan     		MPF4856 MPF4861* O-226AA) MPF4856 MPF4S57 MPF4658 MPF4859 MPF4860 MPF4861 MPF4391 PDF

    ID500A-030

    Abstract: 2DI75S-050A EVK75-050 EVL31-050 EVG31-050 ETG81-050 IC 4511 ETN81-055 EVK31-050 ETK85-050
    Text: COLLHER SEMICONDUCTOR INC MAE D 2230715 DGÜlbSñ 2Mb ICOL <s Power Darlington Modules Switching Time max ton te tf ' Package Single Darlington Modules (Isolated) ETG81-050 ETK81 -050 ETK85-050 600 600 600 600 600 600 450 450 450 30 50 75 200 300 350 100


    OCR Scan     		ETG81-050 ETK81 ETK85-050 ETL81 ETN81 1DI240A-055 ETN85-050 1DI480A-055 36kg- 35-45kg ID500A-030 2DI75S-050A EVK75-050 EVL31-050 EVG31-050 IC 4511 ETN81-055 EVK31-050 PDF

    P1108-12

    Abstract: pn junction DIODE 1N4001 ADP1108 c2992 P1108 DP1108
    Text: ANALOG DEVICES McropoAEr DG-DCGönverter A^ustadeandRxBd3.3V5V 12V /CR 108 FEATURES Operates at Supply V oltages From 2.0 V to 30 V Consumes Only 110 |xA Supply Current Step-Up or Step-Dow n Mode Operation Minim um External Components Required Low Battery Detector Com parator On-Chip


    OCR Scan     		P1108 C2992-12-2/97 P1108-12 pn junction DIODE 1N4001 ADP1108 c2992 DP1108 PDF

    MEM511

    Abstract: MEM511C diode a60 MEM556 mem556c 2N4120 517C 520C 556C MEM561C
    Text: OS TRANSISTOREN P-CHANNEL ENHANCEMENT MODE MOSFETS V br oss V(br) gss Volts V( br) dg Min Volts Min Volts Min Power Dis. 25°C Amb mW Max -30 -2 5 —30 -3 0 -3 0 -2 5 -3 0 -2 5 -5 0 -4 5 -3 5 -3 0 -3 0 -2 5 -2 5 -2 0 -3 0 -4 0 -4 0 -4 0 -4 0 -3 5 -3 0 -4 5


    OCR Scan     		PDF

    SBDIP dg181bp

    Abstract: DG190 DG187 EM 182AA dg184bp DG182 dg181ap DG181BP DG187BP DG190BP
    Text: DG181 thru DG1Q1 High-Speed Drivers with JFET Switch Description The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the


    OCR Scan     		DG181 DG191 10MHz, SBDIP dg181bp DG190 DG187 EM 182AA dg184bp DG182 dg181ap DG181BP DG187BP DG190BP PDF

    bfs21

    Abstract: BFS21A SOT-52 sot52 BF* N-Channel
    Text: PHILIPS INTERNATIONAL 41E D m 711QflSb QOELEB11 ö BHPHIN BFS21 BFS21A T - 2 7 -2 5 ~ MATCHED N-CHANNEL FETS Matched pair of symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.


    OCR Scan     		BFS21 BFS21A T-27-2& 500mA 500fiA BFS21A SOT-52 sot52 BF* N-Channel PDF

    BFS21

    Abstract: BFS21A sot52
    Text: PHILIPS INTERNATIONAL 41E » H 711Qû2b 002^23^ ö BBPHIN BFS21 BFS21A T - 2 7 - 2 t r MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes, mounted together in a metal S-clip.


    OCR Scan     		BFS21 BFS21A r-37-35 BFS21A sot52 PDF

    K1502

    Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C


    OCR Scan     		NPN110. R038q UC300 UC305 UC310 UC315 UC320 UC325 UC330 UC335 K1502 l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5 PDF

    BFQ10

    Abstract: 718s
    Text: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended


    OCR Scan     		711005b DD2b21S BFQ10 T-27-27 BFQ10 718s PDF

    BFQ10

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended


    OCR Scan     		711002b 002b51S BFQ10 002b22ü Q02b221 PDF

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DG181 thru DG191 High-Speed Drivers with JFET Switch D ece m b e r 1997 Features Description • Constant ON-Resistance for Signals to ±10V DG182, DG185, DG188, DG191 , to ±7.5V (All Devices) The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET)


    OCR Scan     		DG181 DG191 DG182, DG185, DG188, DG191) DG191 1-800-4-HARRIS PDF

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 PDF